BCD AS321KTR-G1 Low power single operational amplifier battery charger Datasheet

Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
General Description
Features
The AS321 is a high gain and internally frequency
compensated operational amplifier specifically
designed to operate from a single power supply. Operation from split power supply is also possible and the
low power supply current drain is independent of the
magnitude of the power supply voltages. Typical
applications include battery charger, active filters,
general purpose controllers and most conventional
operational amplifier circuits.
·
·
·
·
·
Excellent Phase Margin: 60 deg.
Large Voltage Gain: 100dB (Typical)
Low Input Bias Current: 20nA (Typical)
Low Input Offset Voltage: 2mV (Typical)
Low Supply Current: 0.35mA at VCC=5V
·
Wide Power Supply Voltage:
Single Supply: 3V to 36V
Dual Supplies: ± 1.5V to ± 18V
Wide Input Common Mode Voltage Range: 0V to
VCC-1.5V
·
The AS321 is compatible with industry standard 321.
The AS321 is available in SOT-23-5 packages.
Applications
·
·
·
Battery Charger
Active Filters
General Purpose Controllers, Instruments
SOT-23-5
Figure 1. Package Type of AS321
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
1
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Pin Configuration
K Package
(SOT-23-5)
INPUT +
1
VEE
2
INPUT -
3
5
VCC
4
OUTPUT
Figure 2. Pin Configuration of AS321 (Top View)
Functional Block Diagram
VCC
6µA
4µA
100µA
Q5
Q6
Q2
INPUT-
Q3
Cc
Q7
Q4
Q1
Rsc
OUTPUT
INPUT+
Q11
Q10
Q8
Q9
Q13
Q12
50µA
VEE
Figure 3. Functional Block Diagram of AS321
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
2
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Ordering Information
-
AS321
E1: Lead Free
G1: Green
Circuit Type
TR: Tape and Reel
Package
K: SOT-23-5
Package
Temperature Range
SOT-23-5
-40 to 85oC
Part Number
Marking ID
Lead Free
Green
Lead Free
Green
AS321KTR-E1
AS321KTR-G1
E6T
G6T
Packing Type
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VS
(VCC-VEE)
Value
Unit
40
V
Differential Input Voltage
VID
40
V
Input Voltage
VIN
-0.3 to 40
V
Thermal Resistance to Ambient
Rθ JA
260
Operating Junction Temperature
TJ
150
TSTG
-65 to 150
TLEAD
260
Power Supply Voltage
Storage Temperature Range
Lead Temperature (Soldering, 10 Seconds)
o
C/W
o
C
oC
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operating Temperature Range
Symbol
Min
Max
VCC
3
36
V
TA
-40
85
oC
May. 2010 Rev. 1. 5
Unit
BCD Semiconductor Manufacturing Limited
3
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, VEE=0V, VO=1.4V
unless otherwise specified.
Parameter
Symbol
VIO
Input Offset Voltage
Average Temperature Coefficient of Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common Mode Voltage
Range (Note 4)
Conditions
Min
VO=1.4V, RS=0Ω, VCC=5V to 30V (Note
3)
IBIAS
IIN+ or IIN-, VCM=0V
IIO
IIN+ - IIN-, VCM=0V
20
5
0
RL=∞, VCC=30V
Common
Ratio
Power
Ratio
Mode
Supply
Rejection
Rejection
Source
GV
VCC=15V, VO=1V to 11V, RL≥2kΩ
CMRR
VCM=0V to (VCC-1.5)V, RS≤10kΩ
PSRR
VCC=5V to 30V, RS≤10kΩ
Sink
ISINK
ISC
VIN+=0V, VIN-=1V, VCC=15V, VO=2V
0.35
0.80
0.45
1.0
0.45
1.2
0.65
1.5
100
60
100
40
VCC=30V, RL=10kΩ
VCC=5V, RL= 10kΩ
May. 2010 Rev. 1. 5
V
mA
mA
mA
15
mA
5
12
nA
dB
20
10
nA
dB
60
20
mV
dB
70
µA
50
40
VOH
VOL
VCC-1.5
80
VCC=15V
VCC=30V, RL=2kΩ
Output Voltage Swing
30
60
VIN+=0V, VIN-=1V, VCC=15V, VO=0.2V
Output Short Circuit Current
to Ground
85
70
ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V
Output Current
100
100
VCC=30V, CMRR≥50dB
Unit
µV/oC
200
ICC
Large Signal Voltage Gain
5
7
RL=∞, VCC=5V
Supply Current
Max
2
7
∆VIO/∆T TA=-40 to 85oC
VCM
Typ
60
mA
26
26
27
V
28
27
5
20
30
mV
BCD Semiconductor Manufacturing Limited
4
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Electrical Characteristics (Continued)
Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, VEE=0V, VO=1.4V
unless otherwise specified.
Parameter
Symbol
Total Harmonic Distortion
THD
Phase Margin
φM
Thermal Resistance
(Junction to Case)
θJC
Conditions
Min
f=1kHZ, AV=20dB, RL=2kΩ,
VO=2Vp-p, CL=100pF, VCC=30V
SOT-23-5
Typ
Max
Unit
0.015
%
60
Deg
o
101
C/W
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Note 3: Over the full input common-mode range 0V to VCC-1.5V(at 25oC).
Note 4: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by
more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or
both inputs can go to +36V without damages, independent of the magnitude of the VCC.
Typical Performance Characteristics
20
15
18
Input Current (nA)
Input Voltage (+VDC)
16
10
NEGATIVE
POSITIVE
5
14
12
10
8
6
4
2
0
0
5
10
0
15
-25
0
25
50
75
100
125
o
Power Supply Voltage (+VDC)
Temperature ( C)
Figure 4. Input Voltage Range
Figure 5. Input Current
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
5
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Electrical Characteristics (Continued)
1.0
120
0.9
0.8
Voltage Gain (dB)
Supply Current (mA)
105
0.7
0.6
0.5
0.4
0.3
RL=2KΩ
RL=20KΩ
90
75
0.2
0.1
0.0
0
5
10
15
20
25
30
35
60
40
0
8
16
Supply Voltage (V)
Figure 6. Supply Current
40
4
Output
Voltage (V)
VCC=30V, VEE=0V
RL=2kΩ, CL=100pF
60
40
3
2
1
0
20
Input
Voltage (V)
Open Loop Gain (dB)
32
Figure 7. Voltage Gain
80
0
-20
24
Power Supply Voltage (V)
0.2k
1k
10k
100k
1M 2M
3
2
1
0
0
Frequency (Hz)
4
8
12
16
20
24
28
32
36
40
Time (µs)
Figure 8. Open Loop Gain vs.Frequency
Figure 9. Voltage Follower Pulse Response
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
6
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Typical Performance Characteristics (Continued)
20
800
15
600
Output Swing (V)
Output Voltage (mV)
700
500
400
300
10
5
200
100
0
4
8
16
12
0
1k
20
10k
1M
Frequency (Hz)
Time (µs)
Figure 10. Voltage Follower Pulse Response
(Small Signal)
Figure 11. Large Signal Frequency Response
10
8
7
6
Output Voltage (V)
Output Voltage Referenced to Vcc (V)
100k
5
4
3
1
VCC=5V
VCC=15V
0.1
2
1
0
0.1
1
10
0.01
1E-3
100
0.01
0.1
1
10
100
Output Sink Current (mA)
Output Source Current (mA)
Figure 12. Output Characteristics: Current Sourcing
Figure 13. Output Characteristics: Current Sinking
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
7
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Typical Performance Characteristics (Continued)
100
90
Output Current (mA)
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
100
125
o
Temperature ( C)
Figure 14. Current Limiting
Typical Application
R1 910K
R1 100k
+V1
R2 100K
-
VCC
+V2
AS321
R3 91K
VO
+
VIN(+)
+
R2 100k
R3 100k
+V4
Figure 16. Power Amplifier
AS321
VO
R6 100k
+V3
RL
R5
100k
R4 100k
Figure 17. DC Summing Amplifier
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
8
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Typical Application (Continued)
VCC
R2 1M
R1 100k
C1
0.1µF
-
CO
VO
AS321
RB
6.2k
+
CIN
R3
1M
AC
+
2V
-
RL
10k
R2
AS321
R4 100k
R5
100k
R1
2K
-
VCC
C2
10µF
+
2V
-
R3
2K
I1
+
R4
3K
AV=1+R2/R1
I2
1mA
AV=11 (As shown)
Figure 18. AC Coupled Non-Inverting Amplifier
R1
Figure 19. Fixed Current Sources
1M
C1 0.01µF
0.001µF
R2 100K
R1 16K
-
AS321
+
C2
0.01µF
VO
AS321
-
+
R3 100K
R2 16K
VIN
VO
R3
100k
V0
R5 100K
VCC
0
R4
100
K
Figure 20. Pulse Generator
f0
fo=1KHz
Q=1
AV=2
R4
100k
Figure 21. DC Coupled Low-Pass Active Filter
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
9
Data Sheet
LOW POWER SINGLE OPERATIONAL AMPLIFIER
AS321
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
May. 2010 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
10
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788
Similar pages