AP92U03GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
4.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
80A
S
Description
AP92U03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Drain Current, VGS @ 10V
ID@TC=100℃
Drain Current, VGS @ 10V
3
1
Rating
Units
30
V
+20
V
80
A
53
A
320
A
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
50
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201501142
AP92U03GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
4.5
mΩ
VGS=4.5V, ID=30A
-
-
7.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
70
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
34
54
nC
Qgs
Gate-Source Charge
VDS=24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=30A
-
70
-
ns
td(off)
Turn-off Delay Time
RG=2.4Ω
-
34
-
ns
tf
Fall Time
VGS=10V
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
2685 4300
pF
Coss
Output Capacitance
VDS=25V
-
405
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
345
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
-
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
33
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Package limitation current is 80A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92U03GP-HF
240
160
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
200
o
T C =150 C
ID , Drain Current (A)
T C =25 o C
V G = 4.0V
160
120
80
10V
7.0V
6.0V
5.0V
120
V G =4.0V
80
40
40
0
0
0.0
2.0
4.0
6.0
8.0
10.0
0.0
1.0
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
5.0
6.0
Fig 2. Typical Output Characteristics
2.0
6
I D =30A
I D =40A
V G =10V
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ )
3.0
V DS , Drain-to-Source Voltage (V)
5
1.6
1.2
4
0.8
0.4
3
2
4
6
8
-50
10
30
1.2
Normalized VGS(th)
1.6
IS(A)
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
o
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =25 o C
T j =150 C
0
o
V GS , Gate-to-Source Voltage (V)
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP92U03GP-HF
f=1.0MHz
4000
I D =30A
8
V DS =15V
V DS =18V
V DS =24V
6
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
60
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (R thjc)
1000
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
Single Pulse
0.01
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP92U03GP-HF
MARKING INFORMATION
92U03GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5