AP86T02GJB
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
25V
RDS(ON)
6mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
75A
S
Description
AP86T02 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
G
D
S
TO-251S(JB)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Drain Current, VGS @ 10V
ID@TC=100℃
Drain Current, VGS @ 10V
.
3
1
Rating
Units
25
V
+20
V
75
A
62
A
300
A
75
W
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
2
℃/W
110
℃/W
1
201505271
AP86T02GJB
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
25
-
-
V
VGS=10V, ID=45A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
10
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
42
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
23
37
nC
Qgs
Gate-Source Charge
VDS=20V
-
5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
nC
td(on)
Turn-on Delay Time
VDS=10V
-
11
-
ns
tr
Rise Time
ID=30A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
32
-
ns
tf
Fall Time
VGS=10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1830 2930
pF
Coss
Output Capacitance
VDS=25V
-
490
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
360
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
2.2
Ω
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP86T02GJB
200
120
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
150
T C = 175 C
90
100
V G =3.0V
50
60
V G = 3 .0V
30
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
I D =30A
T c =25 ℃
I D =45A
V G =10V
12
.
Normalized RDS(ON)
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
ID , Drain Current (A)
o
T C =25 C
8
1.4
1.0
4
0.6
2
4
6
8
10
25
50
75
100
125
150
175
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
1.2
T j =25 o C
Is (A)
Normalized VGS(th)
T j =175 o C
20
10
0.8
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
25
50
75
100
125
150
175
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP86T02GJB
f=1.0MHz
12
4000
3000
V DS =10V
V DS =15V
V DS =20V
8
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
10
2000
C iss
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
1
50
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100
ID (A)
100us
.
1ms
10
o
10ms
100ms
DC
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
40
2.8V 3V
30
3.2V
3.5V
3.8V
80
T j =25 o C
RDS(ON) (mΩ)
ID , Drain Current (A)
V DS =5V
T j =175 o C
40
20
4.2V
4.5V
10
10V
0
0
0
2
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
0
20
40
60
80
100
I D (A)
Fig 12. Drain-Source On Resistance
4
AP86T02GJB
MARKING INFORMATION
86T02GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5