PHILIPS BLV100 Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
BLV100
PIN CONFIGURATION
• Internal input matching to achieve
high power gain
• Ballasting resistors for an optimum
temperature profile
halfpage
• Gold metallization ensures
excellent reliability.
1
DESCRIPTION
NPN silicon planar epitaxial transistor
in a SOT171 envelope, intended for
common emitter, class-AB operation
in radio transmitters for the 960 MHz
communications band. The transistor
has a 6-lead flange envelope with a
ceramic cap. All leads are isolated
from the flange.
2
3
4
5
6
c
handbook, halfpage
b
MBB012
Top view
e
MBA931 - 1
Fig.1 Simplified outline and symbol.
PINNING - SOT171
PIN
WARNING
DESCRIPTION
1
emitter
Product and environmental safety - toxic materials
2
emitter
3
base
4
collector
5
emitter
6
emitter
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance up to Th = 25 °C in a common emitter class-AB test circuit.
MODE OF OPERATION
c.w. class-AB
March 1993
f
(MHz)
VCE
(V)
PL
(W)
GP
(dB)
ηc
(%)
960
24
8
>8
> 50
2
Philips Semiconductors
Product specification
UHF power transistor
BLV100
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter voltage
peak value;
VBE = 0
−
50
V
VCEO
collector-emitter voltage
open base
−
30
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current
DC or average value
−
2.25
A
ICM
collector current
peak value
f > 1 MHz
−
3.5
A
Ptot
total power dissipation
f > 1 MHz;
Tmb = 25 °C
−
31
W
Tstg
storage temperature range
−65
150
°C
Tj
junction operating temperature
−
200
°C
MDA538
10
MDA540
60
handbook, halfpage
handbook, halfpage
Ptot
IC
(W)
(A)
Th = 70 °C
1
40
Tmb = 25 °C
(2)
(1)
(1)
20
10−1
1
10
VCE (V)
0
102
0
40
80
160
120
Th (°C)
(1) RF operation.
(2) Short time operation during mismatch.
(1) Second breakdown limit (temperature independent).
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curve.
THERMAL RESISTANCE
Dissipation = 31 W; Tmb = 25 °C.
SYMBOL
PARAMETER
MAX.
UNIT
Rth j-mb(RF)
from junction to mounting base
5.6
K/W
Rth mb-h
from mounting base to heatsink
0.4
K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV100
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CES
collector-emitter breakdown voltage
VBE = 0;
IC = 8 mA
50
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base;
IC = 60 mA
30
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector;
IE = 4 mA
4
−
−
V
ICES
collector-emitter leakage current
VBE = 0;
VCE = 30 V
−
−
2
mA
hFE
DC current gain
VCE = 25 V;
IC = 0.6 A
20
75
−
‘
Cc
collector capacitance
VCB = 25 V;
IE = Ie = 0;
f = 1 MHz
−
13.5
−
pF
Cre
feedback capacitance
VCE = 25 V;
IC = 40 mA;
f =1 MHz
−
8.4
−
pF
Cc-f
collector-flange capacitance
−
2
−
pF
MDA544
100
MDA542
60
handbook, halfpage
handbook, halfpage
hFE
Cc
(pF)
80
40
60
40
20
20
0
0
0.4
0
0.8
1.2
1.6
0
2
IC (A)
10
20
VCB (V)
30
VCE = 25 V.
Fig.4
DC current gain as a function of collector
current, typical values.
March 1993
Fig.5
4
Output capacitance as a function of
collector-base voltage, typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV100
APPLICATION INFORMATION
RF performance in a class-AB circuit; Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified.
f
(MHz)
MODE OF OPERATION
c.w. class-AB
960
MDA545
12
ηC
GP
(dB)
Gp
8
4
0
0
4
8
ICQ
(mA)
24
handbook, halfpage
Fig.6
VCE
(V)
PL (W)
PL
(W)
20
>8
typ. 9
8
> 50
typ. 55
MDA539
15
60
handbook, halfpage
ηC
(%)
PL
(W)
40
10
20
5
ηc
(%)
GP
(dB)
0
0
12
0
Gain and efficiency as functions of load
power, typical values.
Fig.7
1
2
PS (W)
3
Load power as a function of drive power,
typical values.
Ruggedness in class-AB operation
The BLV100 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases, under
the following conditions:
VCE = 24 V, f = 960 MHz, and rated output power.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV100
handbook, full pagewidth
R1
VB
C6
R2
C8
VCC
L8
L6
C7
C9
L5
50 Ω
input
C1
,,,,,,
,,,,,,
,,,,,, ,,,,,,
L1
L2
C2
C10
L7
L3
C5
L4
C3
C4
D.U.T.
C12
L9
C11
L10
L11
L12
C13
C15
50 Ω
output
C14
MDA537
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
C1, C6, C7,
C8, C15
multilayer ceramic chip capacitor
330 pF
C2, C3, C13,
C14
film dielectric trimmer
1.4 to 5.5 pF
C4, C5
multilayer ceramic chip capacitor (note 1)
5.1 pF
C9
35 V solid aluminium capacitor
2.2 µF
C10
multilayer ceramic chip capacitor
3 × 100 pF
in parallel
C11, C12
multilayer ceramic chip capacitor (note 2)
6.2 pF
DIMENSIONS
2222 809 09001
2222 128 50228
L1, L12
microstrip (note 3)
50 Ω
9 × 2.4 mm
L2, L11
microstrip (note 3)
50 Ω
23 × 2.4 mm
L3
microstrip (note 3)
50 Ω
16 × 2.4 mm
L4
microstrip (note 3)
43 Ω
3 × 3 mm
L5
3 turns enamelled 0.8 mm copper wire
L6, L8
grade 3B Ferroxcube wideband RF choke
L7
4 turns enamelled 0.8 mm copper wire
L9
microstrip (note 3)
43 Ω
14.5 mm × 3 mm;
L10
microstrip (note 3)
50 Ω
4.5 mm × 2.4 mm;
R1, R2
0.4 W metal film resistor
10 Ω
March 1993
CATALOGUE
NO.
int. dia. 3 mm;
length 5 mm;
leads 2 × 5 mm
4312 020 36642
int. dia. 4 mm;
length 5 mm;
leads 2 × 5 mm
6
2322 151 71009
Philips Semiconductors
Product specification
UHF power transistor
BLV100
Notes
1. American Technical Ceramics capacitor type 100A, or capacitor of the same quality.
2. American Technical Ceramics capacitor type 100B, or capacitor of the same quality.
3. The microstrips are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1⁄32 inch.
122 mm
handbook, full pagewidth
copper straps
copper straps
rivets
rivets
70 mm
rivets
rivets
M2
copper straps
copper straps
M3
C7
L6
L8
C6
R1
C10
C8
C9
R2
L7
C12
L5
C5
C1
L1
L2
L3
L4
L11
L12
C15
C11
C4
C3
L10
L9
C3
C13
C14
MDA536
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as an earth. Earth connections are made by means of fixing screws, hollow rivets and
straps around the board and under the emitters, to provide a direct contact between the component ground
plane.
Fig.9 Component layout for 960 MHz test circuit.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV100
MDA543
5
Zi
MDA546
10
handbook, halfpage
handbook, halfpage
ZL
(Ω)
(Ω)
4
XL
8
xi
3
6
RL
2
4
ri
1
2
0
800
850
900
950
0
800
1000
f (MHz)
850
900
950
1000
f (MHz)
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
Fig.10 Input impedance (series components) as a
function of frequency, typical values.
Fig.11 Load impedance (series components) as a
function of frequency, typical values.
MDA541
12
handbook, halfpage
Gp
(dB)
8
handbook, halfpage
4
Zi
ZL
MBA451
0
800
850
900
950
f (MHz)
1000
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
Fig.13 Power gain as a function of frequency,
typical values.
Fig.12 Definition of transistor impedance.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV100
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
D1
U1
B
q
C
w2 M C
H1
c
b1
2
H
4
6
E1
U2
1
A
3
5
E
w1 M A B
p
Q
w3 M
b
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
E
E1
e
mm
6.81
6.07
2.15
1.85
3.20
2.89
0.16
0.07
9.25
9.04
9.30
8.99
5.95
5.74
6.00
5.70
3.58
inches
w1
w2
w3
0.51
1.02
0.26
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236
0.120 0.445 0.365 0.135 0.170
0.980 0.236
0.725
0.02
0.140
0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224
0.100 0.415 0.355 0.125 0.162
0.970 0.224
0.04
0.01
OUTLINE
VERSION
F
JEDEC
EIAJ
SOT171A
March 1993
H1
3.05 11.31 9.27
2.54 10.54 9.01
REFERENCES
IEC
H
p
3.43
3.17
Q
q
U1
U2
4.32
24.90 6.00
18.42
4.11
24.63 5.70
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
9
Philips Semiconductors
Product specification
UHF power transistor
BLV100
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
10
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