DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile halfpage • Gold metallization ensures excellent reliability. 1 DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. 2 3 4 5 6 c handbook, halfpage b MBB012 Top view e MBA931 - 1 Fig.1 Simplified outline and symbol. PINNING - SOT171 PIN WARNING DESCRIPTION 1 emitter Product and environmental safety - toxic materials 2 emitter 3 base 4 collector 5 emitter 6 emitter This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB test circuit. MODE OF OPERATION c.w. class-AB March 1993 f (MHz) VCE (V) PL (W) GP (dB) ηc (%) 960 24 8 >8 > 50 2 Philips Semiconductors Product specification UHF power transistor BLV100 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter voltage peak value; VBE = 0 − 50 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 4 V IC collector current DC or average value − 2.25 A ICM collector current peak value f > 1 MHz − 3.5 A Ptot total power dissipation f > 1 MHz; Tmb = 25 °C − 31 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C MDA538 10 MDA540 60 handbook, halfpage handbook, halfpage Ptot IC (W) (A) Th = 70 °C 1 40 Tmb = 25 °C (2) (1) (1) 20 10−1 1 10 VCE (V) 0 102 0 40 80 160 120 Th (°C) (1) RF operation. (2) Short time operation during mismatch. (1) Second breakdown limit (temperature independent). Fig.2 DC SOAR. Fig.3 Power/temperature derating curve. THERMAL RESISTANCE Dissipation = 31 W; Tmb = 25 °C. SYMBOL PARAMETER MAX. UNIT Rth j-mb(RF) from junction to mounting base 5.6 K/W Rth mb-h from mounting base to heatsink 0.4 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor BLV100 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CES collector-emitter breakdown voltage VBE = 0; IC = 8 mA 50 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 60 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 4 mA 4 − − V ICES collector-emitter leakage current VBE = 0; VCE = 30 V − − 2 mA hFE DC current gain VCE = 25 V; IC = 0.6 A 20 75 − ‘ Cc collector capacitance VCB = 25 V; IE = Ie = 0; f = 1 MHz − 13.5 − pF Cre feedback capacitance VCE = 25 V; IC = 40 mA; f =1 MHz − 8.4 − pF Cc-f collector-flange capacitance − 2 − pF MDA544 100 MDA542 60 handbook, halfpage handbook, halfpage hFE Cc (pF) 80 40 60 40 20 20 0 0 0.4 0 0.8 1.2 1.6 0 2 IC (A) 10 20 VCB (V) 30 VCE = 25 V. Fig.4 DC current gain as a function of collector current, typical values. March 1993 Fig.5 4 Output capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF power transistor BLV100 APPLICATION INFORMATION RF performance in a class-AB circuit; Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. f (MHz) MODE OF OPERATION c.w. class-AB 960 MDA545 12 ηC GP (dB) Gp 8 4 0 0 4 8 ICQ (mA) 24 handbook, halfpage Fig.6 VCE (V) PL (W) PL (W) 20 >8 typ. 9 8 > 50 typ. 55 MDA539 15 60 handbook, halfpage ηC (%) PL (W) 40 10 20 5 ηc (%) GP (dB) 0 0 12 0 Gain and efficiency as functions of load power, typical values. Fig.7 1 2 PS (W) 3 Load power as a function of drive power, typical values. Ruggedness in class-AB operation The BLV100 is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases, under the following conditions: VCE = 24 V, f = 960 MHz, and rated output power. March 1993 5 Philips Semiconductors Product specification UHF power transistor BLV100 handbook, full pagewidth R1 VB C6 R2 C8 VCC L8 L6 C7 C9 L5 50 Ω input C1 ,,,,,, ,,,,,, ,,,,,, ,,,,,, L1 L2 C2 C10 L7 L3 C5 L4 C3 C4 D.U.T. C12 L9 C11 L10 L11 L12 C13 C15 50 Ω output C14 MDA537 Fig.8 Class-AB test circuit at f = 960 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE C1, C6, C7, C8, C15 multilayer ceramic chip capacitor 330 pF C2, C3, C13, C14 film dielectric trimmer 1.4 to 5.5 pF C4, C5 multilayer ceramic chip capacitor (note 1) 5.1 pF C9 35 V solid aluminium capacitor 2.2 µF C10 multilayer ceramic chip capacitor 3 × 100 pF in parallel C11, C12 multilayer ceramic chip capacitor (note 2) 6.2 pF DIMENSIONS 2222 809 09001 2222 128 50228 L1, L12 microstrip (note 3) 50 Ω 9 × 2.4 mm L2, L11 microstrip (note 3) 50 Ω 23 × 2.4 mm L3 microstrip (note 3) 50 Ω 16 × 2.4 mm L4 microstrip (note 3) 43 Ω 3 × 3 mm L5 3 turns enamelled 0.8 mm copper wire L6, L8 grade 3B Ferroxcube wideband RF choke L7 4 turns enamelled 0.8 mm copper wire L9 microstrip (note 3) 43 Ω 14.5 mm × 3 mm; L10 microstrip (note 3) 50 Ω 4.5 mm × 2.4 mm; R1, R2 0.4 W metal film resistor 10 Ω March 1993 CATALOGUE NO. int. dia. 3 mm; length 5 mm; leads 2 × 5 mm 4312 020 36642 int. dia. 4 mm; length 5 mm; leads 2 × 5 mm 6 2322 151 71009 Philips Semiconductors Product specification UHF power transistor BLV100 Notes 1. American Technical Ceramics capacitor type 100A, or capacitor of the same quality. 2. American Technical Ceramics capacitor type 100B, or capacitor of the same quality. 3. The microstrips are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1⁄32 inch. 122 mm handbook, full pagewidth copper straps copper straps rivets rivets 70 mm rivets rivets M2 copper straps copper straps M3 C7 L6 L8 C6 R1 C10 C8 C9 R2 L7 C12 L5 C5 C1 L1 L2 L3 L4 L11 L12 C15 C11 C4 C3 L10 L9 C3 C13 C14 MDA536 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of fixing screws, hollow rivets and straps around the board and under the emitters, to provide a direct contact between the component ground plane. Fig.9 Component layout for 960 MHz test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLV100 MDA543 5 Zi MDA546 10 handbook, halfpage handbook, halfpage ZL (Ω) (Ω) 4 XL 8 xi 3 6 RL 2 4 ri 1 2 0 800 850 900 950 0 800 1000 f (MHz) 850 900 950 1000 f (MHz) VCE = 24 V; ICQ = 20 mA; PL = 8 W. VCE = 24 V; ICQ = 20 mA; PL = 8 W. Fig.10 Input impedance (series components) as a function of frequency, typical values. Fig.11 Load impedance (series components) as a function of frequency, typical values. MDA541 12 handbook, halfpage Gp (dB) 8 handbook, halfpage 4 Zi ZL MBA451 0 800 850 900 950 f (MHz) 1000 VCE = 24 V; ICQ = 20 mA; PL = 8 W. Fig.13 Power gain as a function of frequency, typical values. Fig.12 Definition of transistor impedance. March 1993 8 Philips Semiconductors Product specification UHF power transistor BLV100 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A March 1993 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 9 Philips Semiconductors Product specification UHF power transistor BLV100 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 10