AP9972GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 18mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9972GP) are available for low-profile applications. G Absolute Maximum Ratings Symbol Parameter D TO-220(P) S Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 38 A 1 IDM Pulsed Drain Current 230 A PD@TC=25℃ Total Power Dissipation 89 W 0.7 W/℃ 45 mJ 30 A Linear Derating Factor 3 Single Pulse Avalanche Energy EAS 3 IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 4 Value Units 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201104186 AP9972GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=35A - - 18 mΩ VGS=4.5V, ID=25A - - 22 mΩ VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=35A - 55 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA ID=35A - 32 51 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC VDS=30V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=35A - 58 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 45 - ns tf Fall Time RD=0.86Ω - 80 - ns Ciss Input Capacitance VGS=0V - 3170 5070 pF Coss Output Capacitance VDS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.7 - Ω Min. Typ. IS=35A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=35A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=30V , L=100uH , RG=25Ω , IAS=30A. 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9972GS/P-HF 200 150 10V 7.0V o 10V 7.0V o T C = 150 C 150 ID , Drain Current (A) ID , Drain Current (A) T C =25 C 5.0V 100 4.5V 5.0V 100 4.5V 50 50 V G =3.0V V G =3.0V 0 0 0 2 4 6 8 10 12 0 14 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 20 I D = 25 A T C =25 o C I D =35A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ) 18 16 1.2 1.0 0.8 0.6 14 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.7 T j =150 o C Normalized VGS(th) (V) 15 IS(A) 0 T j =25 o C 10 1.2 0.7 5 0.2 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9972GS/P-HF f=1.0MHz 10 10000 8 C iss V DS = 30 V V DS = 38 V V DS = 48 V 6 C (pF) VGS , Gate to Source Voltage (V) I D = 35 A 1000 4 C oss C rss 2 100 0 0 20 40 1 60 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 ID (A) 100 100us 10 1ms 10ms 100ms DC T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 1 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG V DS =5V ID , Drain Current (A) 80 T j =25 o C QG T j =150 o C 4.5V 60 QGS QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4