Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery FEATURES BY329F, BY329X series SYMBOL QUICK REFERENCE DATA VR = 800 V/ 1000 V/ 1200 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab k 1 IF(AV) = 8 A a 2 IFSM ≤ 65 A trr ≤ 145 ns GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY329F series is supplied in the conventional leaded SOD100 package. The BY329X series is supplied in the conventional leaded SOD113 package. PINNING PIN SOD100 SOD113 DESCRIPTION case 1 cathode 2 anode tab case isolated 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRSM VRRM VRWM Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage IF(AV) Average forward current1 CONDITIONS MIN. BY329F / BY329X IF(RMS) IFRM RMS forward current Peak repetitive forward current IFSM Peak non-repetitive forward current. I2t Tstg Tj I2t for fusing Storage temperature Operating junction temperature square wave; δ = 0.5; Ths ≤ 83 ˚C sinusoidal; a = 1.57; Ths ≤ 90 ˚C t = 25 µs; δ = 0.5; Ths ≤ 83 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) t = 10 ms MAX. UNIT - -800 800 -1000 -1200 1000 1200 V - 800 600 1000 800 V V 1200 1000 - 8 A - 7 A - 11 16 A A - 65 71 A A -40 - 28 150 150 A2s ˚C ˚C 1. Neglecting switching and reverse current losses. September 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329F, BY329X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Peak isolation voltage from both terminals to external heatsink SOD100 package; R.H. ≤ 65%; clean and dustfree MIN. Visol Cisol TYP. MAX. UNIT - - 1500 V R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree - - 2500 V Capacitance from pin 1 to external heatsink - 10 - pF MIN. TYP. MAX. UNIT - 55 4.8 5.9 - K/W K/W K/W MIN. TYP. MAX. UNIT - 1.5 0.1 1.85 1.0 V mA MIN. TYP. MAX. UNIT - 125 0.5 50 145 0.7 60 ns µC A/µs f = 1 MHz THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air. Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF IR Forward voltage Reverse current IF = 20 A VR = VRWM; Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS trr Qs dIR/dt Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs IF = 2 A; -dIF/dt = 20 A/µs September 1998 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery I dI F BY329F, BY329X series 100 F IFS (RMS) / A BY329 90 dt 80 IFSM 70 trr 60 time 50 40 Qs I 30 100% 25% 20 10 I R 0 1ms rrm Fig.1. Definition of trr, Qs and Irrm 20 30 54 15 10s BY229F Tj = 150 C Tj = 25 C 78 0.5 20 0.2 10 1s IF / A D = 1.0 Vo = 1.25 V Rs = 0.03 Ohms 0.1s tp / s Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. Ths(max) / C BY329 PF / W 10ms 102 0.1 tp I D= 5 tp T 2 4 6 IF(AV) / A 8 typ 10 150 12 0 0 Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T. 15 Ths(max) / C BY329 PF / W Vo = 1.25 V 0.5 1 VF / V 10 78 2.2 2 BY329 Qs / uC Tj = 150 C Tj = 25 C IF = 10 A 1.9 10 1.5 Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj a = 1.57 Rs = 0.03 Ohms max t T 0 0 10 126 10 A 102 2A 2.8 4 1A 2A 1 1A 126 5 0 0 2 4 IF(AV) / A 6 0.1 150 8 1 Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV). September 1998 10 -dIF/dt (A/us) 100 Fig.6. Maximum Qs at Tj = 25˚C and 150˚C 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329F, BY329X series BY329 trr / ns 1000 10 Transient thermal impedance, Zth j-hs (K/W) IF = 10 A 1 10A 1A 1A 0.1 100 PD 0.01 tp D= Tj = 150 C Tj = 25 C 0.001 1us 10 1 10 -dIF/dt (A/us) 100 Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C 100 T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F 10s Fig.9. Transient thermal impedance Zth = f(tp) BY329 Cd / pF 10 1 1 10 VR / V 100 1000 Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C September 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329F, BY329X series MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 a 0.9 0.7 M 0.55 max 1.3 5.08 top view Fig.10. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329F, BY329X series MECHANICAL DATA Dimensions in mm 10.3 max 4.6 max Net Mass: 2 g 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 Fig.11. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 6 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329F, BY329X series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 7 Rev 1.100