WJ AH118 ¼ watt, high linearity ingap hbt amplifier Datasheet

AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Product Features
• 60 – 3500 MHz
• +24.7 dBm P1dB
• +40.5 dBm Output IP3
• 20.4 dB Gain @ 900 MHz
• 16.5 dB Gain @ 1900 MHz
• +5V Single Positive Supply
• Lead-free/Green/RoHScompliant SOT-89 Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastructure
• DBS / WLL / W-LAN
• Defense / Homeland Security
Product Description
Functional Diagram
The AH118 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+40.5 dBm OIP3 and +24.7 dBm of compressed 1dB
power. The AH118 is available in a lead-free/green/RoHScompliant SOT-89 package. All devices are 100% RF and
DC tested.
GND
The AH118 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. Internal biasing allows the AH118 to
maintain high linearity over temperature and operate
directly off a single +5V supply. This combination makes
the device an excellent candidate for transceiver line cards
in current and next generation multi-carrier 3G base
stations.
Specifications (1)
Parameter
4
1
2
3
RF IN
GND
RF OUT
Function
Input / Base
Output / Collector
Ground
Pin No.
1
3
2, 4
Typical Performance (3)
Units
Min
MHz
MHz
dB
dB
dB
dBm
dBm
60
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
Device Voltage
13.5
+23
+39.5
Typ
Max
Parameter
3500
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
IS-95A Channel Power
1900
16.5
12
20
+24.7
+40.5
Units
@ -45 dBc ACPR,
dBm
+18
dBm
+16.7
dB
mA
V
4.3
160
+5
wCDMA Channel Power
@ -45 dBc ACLR
140
Noise Figure
Supply Bias
175
Typical
MHz
dB
dB
dB
dBm
dBm
900
20.4
-15
-12
+24.2
+40
1900
16.5
-12
-20
+24.7
+40.5
dBm
+18.2
+18
dBm
dB
2140
16.3
-15
-16
+24.7
+40.5
+16.7
4.0
4.3
4.8
+5 V @ 160 mA
3. Typical parameters reflect performance in a tuned application circuit: Vsupply = +5 V, 160 mA,
+25 °C
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Junction Temperature
-40 to +85 °C
-65 to +150 °C
+15 dBm
+6 V
220 mA
+250 °C
Ordering Information
Part No.
Description
AH118-89G
High Linearity InGaP HBT Amplifier
AH118-89PCB900
AH118-89PCB1900
AH118-89PCB2140
900 MHz Evaluation Board
1900 MHz Evaluation Board
2140 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOT-89 package)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system)
S11
0
3.
0
3.
0
4.
25
0
4.
5.0
5.0
0. 2
20
0. 2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10
5
10.0
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0
0.2
15
0.4
10.0
-10.0
2
-0 .
0
-10.0
2
-0 .
-4
.0
-5.
0
-3
.0
.0
-2
.4
-0
-0.8
Swp Min
0.01GHz
Swp Min
0.01GHz
-1.0
2.5
-0
.6
2
-0.8
1
1.5
Frequency (GHz)
-1.0
0.5
-0
.6
0
.0
-2
.4
-0
-10
-3
.0
-5
-4
.0
-5.
0
Gain (dB)
0.8
2.
0
0.
4
30
Swp Max
6GHz
6
0.
2.
0
DB(GMax)
1.0
1.0
0.8
6
0.
DB(|S[2,1]|)
35
S22
Swp Max
6GHz
0.
4
Gain / Maximum Stable Gain
40
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments.
S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-2.69
-2.16
-1.91
-1.77
-1.60
-1.45
-1.40
-1.25
-1.20
-1.17
-1.13
-1.11
-1.05
-0.99
-0.93
-0.95
-0.92
-173.38
-177.19
178.30
172.47
166.83
161.09
155.39
149.59
143.79
137.57
132.05
126.72
121.50
115.58
110.41
105.30
100.11
21.74
19.63
18.22
17.13
15.99
14.97
13.84
12.76
11.71
10.63
9.75
8.88
8.00
7.31
6.52
5.73
5.05
153.70
150.82
148.19
135.41
121.91
109.02
97.28
86.83
76.95
68.15
59.55
52.22
45.09
37.40
30.66
23.51
17.07
-31.02
-30.31
-29.87
-29.83
-29.49
-29.18
-28.70
-28.63
-28.30
-27.94
-27.63
-27.51
-27.06
-27.02
-26.78
-26.66
-26.61
11.24
7.90
5.01
4.07
2.79
2.11
1.64
-0.09
-1.34
-4.47
-7.00
-8.43
-11.00
-14.19
-18.24
-20.10
-23.28
-7.02
-5.57
-5.06
-4.77
-4.60
-4.44
-4.26
-4.14
-3.97
-4.00
-3.86
-3.84
-3.62
-3.55
-3.46
-3.34
-3.30
-148.17
-162.45
-173.51
177.87
171.65
166.08
160.40
155.01
149.63
144.03
139.02
134.24
129.30
124.42
119.42
114.26
109.29
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .062” total thickness with a .014” Getek top RF layer, 4 layers (other layers added for rigidity),
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH118-89PCB900)
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
900 MHz
20.4 dB
15 dB
12 dB
+24.2 dBm
All passive components are of size 0603 unless otherwise noted.
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
ID=C2
C=1000 pF
size 0805
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
DIODE1
Component R1 is shown in the silkscreen but is not used for this
configuration.
ID=C3
C=56 pF
5.6 V
L2 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
+40 dBm
(+11 dBm / tone, 1 MHz spacing)
ID=C1
C=100000 pF
size 1206
Vcc = +5 V
ID=C4
C=100 pF
IND
ID=L1
L=33 nH
size 0805
ID=L2
R=0 Ohm
+18.2 dBm
ID=C5
C=100 pF
ID=L3
L=2.2 nH
ID=C7
C=8.2 pF
4 dB
+5 V
160 mA
NET="AH118"
ID=C9
C=2 pF
C7 should be placed at the silk screen
marker 'C' on the WJ evaluation board.
C9 should be placed at the
silk screen marker '7' on the
WJ evaluation board.
The capacitor should be placed
6.1° @ 0.9GHz from pin 1 of the AH118
The capacitor should be placed
15.8° @ 0.9GHz from pin 3
of the AH118.
S21 vs. Frequency
ACPR vs. Channel Power
22
-40
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
S 2 1 (d B )
21
-50
20
19
-60
18
+25°C
17
800
-40°C
+85°C
-70
850
900
950
12
1000
Frequency (MHz)
13
14
S11 vs. Frequency
16
17
18
19
S22 vs. Frequency
0
0
+25°C
-5
-40°C
+85°C
-10
-5
S 2 2 (d B )
S 1 1 (d B )
15
Output Channel Power (dBm)
-15
-20
-10
-15
-20
-25
-25
-30
800
-30
800
850
900
Frequency (MHz)
950
1000
+25°C
850
-40°C
900
+85°C
950
1000
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
1900 MHz Application Circuit (AH118-89PCB1900)
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
1900 MHz
16.8 dB
12 dB
20 dB
+24.7 dBm
+5V
The dio d e D1 is u sed a s ove r-vo lta g e p ro tectio n o n th e e va lu atio n.
b oards. It is n ot spe ci fi ca lly req uire d in the fin al circuit la you t in
a s yste m u sing a DC re gul ator.
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
C AP
ID =C 2
C =1000 pF
CA P
ID= C 3
C= 56 pF
L 3-- 0 oh m re sisto r can b e rem oved from th e fin al la you t.
P OR T
P =1
Z =50 O hm
CA P
ID =C 4
C= 56 pF
IN D
ID =L1
L=1 8 nH
IND
ID= L2
L= 4.7 nH
+18 dBm
C AP
ID =C 7
C =2 .7 pF
4.3 dB
+5 V
160 mA
C7 sho uld be pla ced at th e silk scre en m arke r
'A' on the W J e va lu ati o n b o ard o r 4 .6 d eg @ 1 .8 4 GH z
from pi n 1 o f th e AH1 18
C AP
ID =C 5
C =5 6 pF
R ES
ID =L3
R =0 O hm
S UB CK T
ID = U1
N ET ="AH 118"
17
-5
S11,S22 (dB)
0
16
15
POR T
P=2
Z= 50 Ohm
CA P
ID= C 9
C= 1.8 pF
C9 sh ou ld b e pl ac ed at the silk scree n m arker '5 ' on the
e va lu atio n b o ard o r 2 3 d eg @ 1 .9G Hz from pin 3 o f AH11 8.
S11, S22 vs. Frequency
Gain
18
ACPR vs. Channel Power
-40
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz
-50
-10
S11
-15
-60
S22
-20
14
13
1800
D1
D iode
5.6V
Co m p one nt R1 is sho wn in the si lkscree n bu t is n ot use d fo r th is
co nfi g ura tion .
+40.5 dBm
(+11 dBm / tone, 1 MHz spacing)
C AP
ID =C 1
C =10 0000 p F
All p a ssive com po ne nts a re of size 0 603 u n less oth erwise no te d .
1850
1900
Frequency (MHz)
1950
2000
-25
1.8
-70
1.85
1.9
1.95
2
12
Frequency (GHz)
13
14
15
16
17
18
19
Output Channel Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH118-89PCB2140)
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Vcc = +5 V
2140 MHz
16.3 dB
15 dB
16 dB
+24.7 dBm
All passive components are of size 0603 unless otherwise noted.
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH)
ID=C3
C=1000 pF
size 0805
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
DIODE1
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
ID=C2
C=56 pF
5.6 V
ID=L1
L=18 nH
+40.5 dBm
(+11 dBm / tone, 1 MHz spacing)
ID=C1
C=1e5 pF
size 1206
ID=C4
C=56 pF
ID=L2
C=1.5 pF
ID=C5
C=56 pF
ID=L3
R=0 Ohm
+16.7 dBm
NET="AH118"
Noise Figure
Device / Supply Voltage
Quiescent Current
4.8 dB
+5 V
160 mA
ID=C6
C=1.8 pF
ID=C9
C=1.2 pF
ACLR vs. Channel Power
-35
17
-40
A C L R (d B c )
S 2 1 (d B )
S21 vs. Frequency
16
15
14
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-45
-50
-55
+25°C
-40°C
+85°C
-60
2130
2150
2170
12
13
14
15
16
17
18
Output Channel Power (dBm)
Frequency (MHz)
S11 vs. Frequency
S22 vs. Frequency
0
0
+25°C
-40°C
+85°C
-5
S 2 2 (d B )
-5
S 1 1 (d B )
The capacitor should be placed
20.5° @ 2.14GHz from pin 3
of the AH118.
The capacitor should be placed
32.6° @ 2.14GHz from pin 1 of the AH118
18
13
2110
C9 should be placed at the
silk screen marker '4' on the
WJ evaluation board.
C6 should be placed at the silk screen
marker "F" on the WJ evaluation board.
-10
-10
-15
-15
-20
2110
-20
2110
+25°C
2130
2150
Frequency (MHz)
2170
2130
-40°C
2150
+85°C
2170
Frequency (MHz)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
70 MHz Reference Design
Vcc = +5 V
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
C=100000 pF
Gain / Return Loss
26
0
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
DB(|S(2,1)|) (L)
C=1000 pF
5.6 V
24
-5
22
-10
20
-15
18
-20
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
S 1 1 , S 2 2 (d B )
70 MHz
24.2 dB
17 dB
16 dB
+23.6 dBm
G a in (d B )
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
L=180 nH
C=1000 pF
NET="AH118"
L=47 nH
C=1000 pF
+41 dBm
4.8 dB
+5 V
160 mA
C=100 pF
16
-25
50
60
70
Frequency (MHz)
80
90
150 MHz Reference Design
Vcc = +5 V
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
C=100000 pF
24
0
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
DB(|S(2,1)|) (L)
C=1000 pF
5.6 V
23
-5
22
-10
21
-15
20
-20
19
-25
S 1 1 , S 2 2 (d B )
150 MHz
23 dB
21 dB
14 dB
+23.5 dBm
G a in (d B )
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Gain / Return Loss
The diode D1 is used as over-voltage protection on the
evaluation boards. It is not specifically required in the
final circuit layout in a system using a DC regulator.
L=82 nH
NET="AH118"
C=1000 pF
C=82 pF
+40 dBm
4.9 dB
+5 V
160 mA
L=18 nH
120
130
140
150
160
Frequency (MHz)
170
180
340 MHz Reference Design
+5V
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
Gain / Return Loss
22
C=1e5 pF
5
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
21
5.6 V
0
20
-5
19
-10
18
-15
S 1 1 , S 2 2 (d B )
340 MHz
20.6 dB
14 dB
13 dB
+24 dBm
G a in (d B )
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
L=100 nH
C=1000 pF
R=1.8 Ohm
L=8.2 nH
+41.4 dBm
5.1 dB
+5 V
160 mA
NET="AH118"
C=1000 pF
L=15 nH
C=18 pF
17
C=1000 pF
The diode D1 is used as over-voltage protection on the
evaluation boards. It is not specifically required in the
final circuit layout in a system using a DC regulator.
C=5.6 pF
-20
260
280
300
320
340
360
Frequency (MHz)
380
400
420
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
450 MHz Reference Design
Vcc = +5 V
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
C=1e5 pF
Gain / Return Loss
23
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
0
DB(|S(2,2)|) (R)
5.6 V
+40 dBm
5.7 dB
+5 V
160 mA
22
-5
21
-10
20
-15
19
-20
S 1 1 , S 2 2 (d B )
450 MHz
22 dB
15 dB
19 dB
+24 dBm
G a in (d B )
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
C=1000 pF
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
L=22 nH
NET="AH118"
C=1000 pF
L=3.3 nH
C=1000 pF
C=27 pF
18
-25
400
420
440
460
Frequency (MHz)
480
500
2450 MHz Reference Design
Vcc = +5 V
ID=C1
C=1e5 pF
size 1206
Gain / Return Loss
(+11 dBm / tone, Df=1 MHz)
Supply Voltage
Current
16
5
14
0
ID=C2
C=1000 pF
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
ID=D1
5.6 V
Component R1 is shown in the silkscreen but is not used for this
configuration.
+38 dBm
12
-5
10
-10
8
-15
DB(|S(1,1)|) (R)
+5 V
160 mA
S11, S22 (dB)
2450 MHz
14.4 dB
14 dB
15 dB
+25 dBm
Gain (dB)
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
All passive components are of size 0603 unless otherwise noted.
DB(|S(2,1)|) (L)
2.4
2.5
NET="AH118"
ID=C6
C=1.2 pF
ID=C7
C=1.2 pF
The center of this component should
be placed .050" away from pin 1.
2.6
CAP
ID=C5
C=56 pF
ID=L3
R=0 Ohm
ID=C4
C=56 pF
-20
ID=C3
C=56 pF
size 0805
ID=L1
L=18 nH
size 0805
ID=L2
L=5.6 nH
DB(|S(2,2)|) (R)
6
2.3
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circuit layout.
The center of this component should be
placed .170" away from the center of C6.
The center of this component should
be placed .200" away from pin 3.
Frequency (GHz)
3500 MHz Reference Design
(+11 dBm / tone, Df=1 MHz)
Noise Figure
Supply Voltage
Current
+38.5 dBm
5.0 dB
+5 V
160 mA
Vcc = +5 V
Gain / Return Loss
13
0
All passive components are of size 0603 unless otherwise noted.
12
-5
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
11
-10
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
10
-15
9
-20
8
-25
3.4
3.45
3.5
Frequency (GHz)
3.55
3.6
S 1 1 , S 2 2 (d B )
3500 MHz
11 dB
14 dB
10 dB
+23.5 dBm
G a in (d B )
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Component R1 is shown in the silkscreen but is not used for this
configuration.
ID=C2
C=1000 pF
ID=D1
5.6 V
ID=C4
C=56 pF
ID=C6
C=0.2 pF
ID=C3
C=56 pF
size 0805
ID=L1
L=18 nH
size 0805
The center of this component should be
placed .170" away from the center of C6.
ID=L2
L=6.8 nH
ID=C1
C=100000 pF
size 1206
NET="AH118"
ID=C7
C=.8 pF
The center of this component should
be placed .050" away from pin 1.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 7 of 8 December 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
AH118-89G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The component will be marked with an
“AH118G” designator with an alphanumeric
lot code on the top surface of the package.
The obsolete tin-lead package is marked with
an “AH118” or “E099” designator followed
by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes between 250 and 500V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Thermal Specifications
Parameter
Rating
Operating Case Temperature (1)
Thermal Resistance (2), Rth
Junction Temperature (3), Tj
-40 to +85 °C
92 °C / W
159 °C
Notes:
1. The amplifier can be operated at 105 °C case temperature for up to 1000
hours over its lifetime without degradation in performance and will not
degrade device operation at the recommended maximum 85 °C case
temperature for the rest of its lifetime.
2. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 °C.
3. This corresponds to the typical biasing condition of +5V, 160 mA at an
85°C case temperature. A minimum MTTF of 1 million hours is achieved
for junction temperatures below 247 °C.
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
MTTF vs. GND Tab Temperature
100000
10000
1000
100
60
70
80
90
100
110
120
Tab Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 8 of 8 December 2006