APTM50DAM38TG Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NTC2 VBUS SENSE CR1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration OUT Q2 G2 S2 0/VBU S NTC1 G2 S2 VBUS VBUS SENSE 0/VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT OUT S2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DAM38TG – Rev 3 July, 2006 VBUS VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C APTM50DAM38TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V T j = 125°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage VGS = 10V VBus = 250V ID = 90A Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Unit mΩ V nA nF nC 35 Tj = 25°C Tj = 125°C Tc = 70°C ns 87 77 1510 µJ 1452 2482 µJ 1692 Min 600 IF = 60 A IF = 120 A www.microsemi.com Max µA 18 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω IF = 60A VR = 400V di/dt = 200A/µs Unit 130 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω VR=600V Typ 11.2 2.4 0.18 246 Max 200 1000 45 5 ±150 66 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A R G = 2Ω IF = 60 A trr 38 3 Min Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Typ Max 250 500 60 1.6 1.9 Tj = 125°C 1.4 Tj = 25°C 130 Tj = 125°C 170 Tj = 25°C 220 Tj = 125°C 920 Unit V µA A 1.8 V ns nC 2–6 APTM50DAM38TG – Rev 3 July, 2006 Symbol APTM50DAM38TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.18 0.9 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50DAM38TG – Rev 3 July, 2006 SP4 Package outline (dimensions in mm) APTM50DAM38TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 0.16 0.14 0.9 0.7 0.12 0.1 0.08 0.5 0.3 0.06 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 300 8V VGS=10&15V 250 7.5V 200 7V 150 I D, Drain Current (A) I D, Drain Current (A) 10 250 350 6.5V 100 6V 50 VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 T J=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 TJ=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 V GS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTM50DAM38TG – Rev 3 July, 2006 Thermal Impedance (°C/W) 0.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 0.6 10 1ms Single pulse TJ =150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) limited by RDSon 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 5–6 APTM50DAM38TG – Rev 3 July, 2006 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DAM38TG APTM50DAM38TG Delay Times vs Current Rise and Fall times vs Current 120 100 80 40 V DS =333V RG =2Ω T J=125°C L=100µH td(on) 20 80 60 40 0 20 40 60 80 100 120 ID, Drain Current (A) 140 20 VDS=333V RG=2Ω T J=125°C L=100µH 4 3 80 100 120 140 Switching Energy vs Gate Resistance Eon Eoff 2 60 8 1 VDS=333V ID=90A TJ=125°C L=100µH 7 Switching Energy (mJ) 5 40 I D, Drain Current (A) Switching Energy vs Current Switching Energy (mJ) tr 20 0 6 5 Eoff 4 Eon 3 2 Eoff 1 0 0 20 40 60 80 100 120 0 140 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 V DS=333V D=50% R G=2Ω T J=125°C T C=75°C ZVS 300 250 200 150 ZCS 100 Hard switching 50 0 20 30 40 50 60 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 70 1000 Source to Drain Diode Forward Voltage T J=150°C 100 80 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DAM38TG – Rev 3 July, 2006 60 VDS=333V RG=2Ω T J=125°C L=100µH 100 tr and t f (ns) t d(on) and td(off) (ns) td(off)