Diodes DMP21D5UFD Low on-resistance Datasheet

DMP21D5UFD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V(BR)DSS
Features
RDS(ON) max
-20V
1.0Ω @ VGS = -4.5V
-600mA
1.5Ω @ VGS = -2.5V
-500mA
2.0Ω @ VGS = -1.8V
•
•
•
•
•
•
•
•
ID
TA = +25°C
Package
X1-DFN1212-3
-400mA
-250mA
3.0Ω @ VGS = -1.5V
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Mechanical Data
•
•
•
•
Applications
•
•
DC-DC Converters
Power Management Functions
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe. Solderable per MILSTD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Top View
ESD PROTECTED
Bottom View
Source
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 4)
Part Number
DMP21D5UFD-7
Notes:
Case
X1-DFN1212-3
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
KP2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
KP2
YM
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
www.diodes.com
2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
August 2012
© Diodes Incorporated
DMP21D5UFD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -1.8V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-20
±8
-600
-500
ID
mA
-400
-300
-2
-800
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Units
V
V
IDM
IS
mA
A
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.4
280
0.8
140
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
-20
—
V
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
IGSS
—
—
—
-80
-100
±10.0
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
|Yfs|
VSD
-0.5
—
—
—
—
—
—
—
—
0.7
0.9
1.2
1.5
5
0.7
-0.75
-1.0
1.0
1.5
2.0
3.0
—
—
-1.2
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
46.1
7.2
4.9
0.5
0.8
0.1
0.1
8.5
4.3
20.2
19.2
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge VGS = -4.5V
Total Gate Charge VGS = -8V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
nA
µA
V
Ω
S
V
Test Condition
VGS = 0V, ID = -1mA
VDS = -4.5V, VGS = 0V
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -80mA
VGS = -1.8V, ID = -40mA
VGS = -1.5V, ID = -30mA
VGS = -1.2V, ID = -1mA
VDS = -3V, ID = -100mA
VGS = 0V, IS = -330mA,
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
nC
VDS = -10V, ID = -250mA
ns
VDD = -3V, VGS = -2.5V,
RL = 300Ω, RG = 25Ω,
ID = -100mA
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMP21D5UFD
1.0
1.0
0.8
0.8
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
0.6
0.4
0.4
0.2
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
5
2.0
1.8
1.6
1.4
VGS = -1.8V
1.2
1.0
VGS = -2.5V
0.8
0.6
VGS = -4.5V
0.4
0.2
0
TA = -55° C
0.6
0
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
1.3
1.1
0.9
0.7
0.5
-50
Document number: DS35931 Rev. 4 - 2
3.0
1.2
T A = 150°C
1.0
TA = 125°C
0.8
0.6
0.4
TA = 85°C
TA = 25°C
T A = -55°C
0.2
0
0
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP21D5UFD
0.5
1.0
1.5
2.0
2.5
-VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
1.4
1.0
1.7
0
1.6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
0
T A = 85°C
TA = 125°C
TA = 25° C
0.2
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCE INFORMATION
TA = 150° C
VDS = -5V
3 of 6
www.diodes.com
0
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance vs.Temperature
150
August 2012
© Diodes Incorporated
DMP21D5UFD
1.2
0.8
-IS, SOURCE CURRENT (A)
-VGS(th), GATE THRESHOLD VOLTAGE (V)
1.0
1.0
ID = -1mA
0.8
ID = -250µA
0.6
0.4
0.6
T A= 25°C
0.4
0.2
0.2
0
-50
0
0.4
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Ciss
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
0.6
0.8
1.0
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
100
10
C oss
Crss
TA = 150°C
100
TA = 125°C
TA = 85°C
10
T A = 25°C
f = 1MHz
1
0
1
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
1
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
8
PW = 100µs
RDS(ON)
Limited
-VGS, GATE-SOURCE VOLTAGE (V)
7
DC
-ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
1.4
PW = 10s
0.1
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.01
T J(MAX) = 150°C
T A = 25°C
Single Pulse
0.001
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
100
4 of 6
www.diodes.com
6
5
4
3
2
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Qg , TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
August 2012
© Diodes Incorporated
DMP21D5UFD
Package Outline Dimensions
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
e
b1
(2x)
E
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1
0 0.05 0.02
A3
0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e
0.80
L 0.25 0.35 0.30
All Dimensions in mm
L
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Y
X1
(2x)
Y2
Y1
(2x)
Dimensions
C
X
X1
Y
Y1
Y2
Value (in mm)
0.80
0.42
0.32
0.50
0.50
1.50
C
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
5 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMP21D5UFD
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
6 of 6
www.diodes.com
August 2012
© Diodes Incorporated
Similar pages