DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS Features RDS(ON) max -20V 1.0Ω @ VGS = -4.5V -600mA 1.5Ω @ VGS = -2.5V -500mA 2.0Ω @ VGS = -1.8V • • • • • • • • ID TA = +25°C Package X1-DFN1212-3 -400mA -250mA 3.0Ω @ VGS = -1.5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Mechanical Data • • • • Applications • • DC-DC Converters Power Management Functions Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X1-DFN1212-3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper leadframe. Solderable per MILSTD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.005 grams (approximate) Drain Gate Gate Protection Diode Top View ESD PROTECTED Bottom View Source Equivalent Circuit Pin-out Top view Ordering Information (Note 4) Part Number DMP21D5UFD-7 Notes: Case X1-DFN1212-3 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information KP2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) KP2 YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP21D5UFD Document number: DS35931 Rev. 4 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D August 2012 © Diodes Incorporated DMP21D5UFD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State Continuous Drain Current (Note 6) VGS = -1.8V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -20 ±8 -600 -500 ID mA -400 -300 -2 -800 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode continuous Current Units V V IDM IS mA A mA Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Steady state Steady state Symbol PD RθJA PD RθJA TJ, TSTG Value 0.4 280 0.8 140 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -20 — V Zero Gate Voltage Drain Current TJ = +25°C IDSS — — Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS — — — -80 -100 ±10.0 VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| VSD -0.5 — — — — — — — — 0.7 0.9 1.2 1.5 5 0.7 -0.75 -1.0 1.0 1.5 2.0 3.0 — — -1.2 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — 46.1 7.2 4.9 0.5 0.8 0.1 0.1 8.5 4.3 20.2 19.2 — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VGS = -4.5V Total Gate Charge VGS = -8V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: nA µA V Ω S V Test Condition VGS = 0V, ID = -1mA VDS = -4.5V, VGS = 0V VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -80mA VGS = -1.8V, ID = -40mA VGS = -1.5V, ID = -30mA VGS = -1.2V, ID = -1mA VDS = -3V, ID = -100mA VGS = 0V, IS = -330mA, pF VDS = -10V, VGS = 0V, f = 1.0MHz nC VDS = -10V, ID = -250mA ns VDD = -3V, VGS = -2.5V, RL = 300Ω, RG = 25Ω, ID = -100mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP21D5UFD Document number: DS35931 Rev. 4 - 2 2 of 6 www.diodes.com August 2012 © Diodes Incorporated DMP21D5UFD 1.0 1.0 0.8 0.8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0.6 0.4 0.4 0.2 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 2.0 1.8 1.6 1.4 VGS = -1.8V 1.2 1.0 VGS = -2.5V 0.8 0.6 VGS = -4.5V 0.4 0.2 0 TA = -55° C 0.6 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 0.5 -50 Document number: DS35931 Rev. 4 - 2 3.0 1.2 T A = 150°C 1.0 TA = 125°C 0.8 0.6 0.4 TA = 85°C TA = 25°C T A = -55°C 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP21D5UFD 0.5 1.0 1.5 2.0 2.5 -VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 1.4 1.0 1.7 0 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0 T A = 85°C TA = 125°C TA = 25° C 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION TA = 150° C VDS = -5V 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance vs.Temperature 150 August 2012 © Diodes Incorporated DMP21D5UFD 1.2 0.8 -IS, SOURCE CURRENT (A) -VGS(th), GATE THRESHOLD VOLTAGE (V) 1.0 1.0 ID = -1mA 0.8 ID = -250µA 0.6 0.4 0.6 T A= 25°C 0.4 0.2 0.2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 100 10 C oss Crss TA = 150°C 100 TA = 125°C TA = 85°C 10 T A = 25°C f = 1MHz 1 0 1 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 1 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 8 PW = 100µs RDS(ON) Limited -VGS, GATE-SOURCE VOLTAGE (V) 7 DC -ID, DRAIN CURRENT (A) ADVANCE INFORMATION 1.4 PW = 10s 0.1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 T J(MAX) = 150°C T A = 25°C Single Pulse 0.001 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMP21D5UFD Document number: DS35931 Rev. 4 - 2 100 4 of 6 www.diodes.com 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg , TOTAL GATE CHARGE (nC) Fig. 12 Gate-Charge Characteristics August 2012 © Diodes Incorporated DMP21D5UFD Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D e b1 (2x) E X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm L b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Y X1 (2x) Y2 Y1 (2x) Dimensions C X X1 Y Y1 Y2 Value (in mm) 0.80 0.42 0.32 0.50 0.50 1.50 C DMP21D5UFD Document number: DS35931 Rev. 4 - 2 5 of 6 www.diodes.com August 2012 © Diodes Incorporated DMP21D5UFD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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