ATMEL AT49BV162A 16-megabit (1m x 16/2m x 8) 3-volt only flash memory Datasheet

Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Fast Read Access Time – 55 ns
• Sector Erase Architecture
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– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 12 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 12 mA Active
– 13 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging Option
1. Description
The AT49BV162A(T)/163A(T) is a 2.7-volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a
48-ball CBGA package. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single power supply,
making it ideally suited for in-system programming.
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV162A
AT49BV162AT
AT49BV163A
AT49BV163AT
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” on page 7).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
3349H–FLASH–3/05
The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase
functions are inhibited. When VPP is at 0.9V or above, normal program and erase operations can
be performed.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down
the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to
VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work
while in this mode; if entered they will result in data being programmed into the device. It is not
recommended that the six-byte code reside in the software of the final product but only exist in
external programming code.
The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active
and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and
the I/O15 pin is used as an input for the LSB (A-1) address function.
2. Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
(1)
VPP
Write Protection
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
Note:
2
1. The VPP pin is not available for the AT49BV163A(T).
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
2.1
AT49BV162A(T)
48-lead TSOP (Type 1) Top View
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
NC
VPP
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
2.2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
2
3
4
5
AT49BV163A(T)
48-lead TSOP (Type 1) Top View
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
NC
NC
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49BV162A(T)
48-ball CBGA Top View (Ball Down)
1
2.3
2.4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49BV163A(T)
48-ball CBGA Top View (Ball Down)
1
6
2
3
4
5
6
A
A
A3
A7
A4
A17
VPP
A2
A6
A1
RDY/BUSY WE
A9
A13
RST
A8
A12
A18
NC
A10
A14
A5
NC
A19
A11
A15
A0
I/O0
I/O2
I/O5
I/O7
A16
CE
I/O8
I/O10
I/O12
I/O14 BYTE
OE
I/O9
I/O11
VCC
I/O13 I/015/A-1
VSS
I/O1
I/O3
I/O4
I/O6
B
C
D
E
F
G
H
VSS
A3
A7 RDY/BUSY WE
A9
A13
A4
A17
NC
RST
A8
A12
A2
A6
A18
NC
A10
A14
A1
A5
NC
A19
A11
A15
A0
I/O0
I/O2
I/O5
I/O7
A16
CE
I/O8
I/O10
I/O12 I/O14 BYTE
OE
I/O9
I/O11
VCC
I/O13I/015/A-1
VSS
I/O1
I/O3
I/O4
I/O6
B
C
D
E
F
G
H
VSS
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3349H–FLASH–3/05
3. Block Diagram
I/O0 - I/O15/A-1
INPUT
BUFFER
INPUT
BUFFER
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
REGISTER
A0 - A19
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
CE
WE
OE
RESET
BYTE
COMMAND
REGISTER
ADDRESS
LATCH
DATA
COMPARATOR
Y-DECODER
Y-GATING
RDY/BUSY
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
VPP
VCC
GND
X-DECODER
MAIN
MEMORY
4. Device Operation
4.1
Read
The AT49BV162A(T)/163A(T) is accessed like an EPROM. When CE and OE are low and WE is
high, the data stored at the memory location determined by the address pins are asserted on the
outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention.
4.2
Command Sequences
When the device is first powered on, it will be reset to the read or standby mode, depending
upon the state of the control line inputs. In order to perform other device functions, a series of
command sequences are entered into the device. The command sequences are shown in the
“Command Definition Table” on page 13 (I/O8 - I/O15 are don’t care inputs for the command
codes). The command sequences are written by applying a low pulse on the WE or CE input
with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE
or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address locations used in the command sequences
are not affected by entering the command sequences.
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AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
4.3
Reset
A RESET input pin is provided to ease some system applications. When RESET is at a logic
high level, the device is in its standard operating mode. A low level on the RESET input halts the
present device operation and puts the outputs of the device in a high impedance state. When a
high level is reasserted on the RESET pin, the device returns to the read or standby mode,
depending upon the state of the control inputs.
4.4
Erasure
Before a byte/word can be reprogrammed, it must be erased. The erased state of memory bits is
a logical “1”. The entire device can be erased by using the Chip Erase command or individual
sectors can be erased by using the Sector Erase command.
4.4.1
Chip Erase
The entire device can be erased at one time by using the six-byte chip erase software code.
After the chip erase has been initiated, the device will internally time the erase operation so that
no external clocks are required. The maximum time to erase the chip is tEC.
If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that
has been locked out; it will erase only the unprotected sectors. After the chip erase, the device
will return to the read or standby mode.
4.4.2
Sector Erase
As an alternative to a full chip erase, the device is organized into 39 sectors (SA0 - SA38) that
can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector
address is latched on the falling WE edge of the sixth cycle while the 30H data input command is
latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth
cycle. The erase operation is internally controlled; it will automatically time to completion. The
maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not
enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a
sector that has been protected will result in the operation terminating immediately.
4.5
Byte/Word Programming
Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a
word-by-word basis. Programming is accomplished via the internal device command register
and is a four-bus cycle operation. The device will automatically generate the required internal
program pulses.
Any commands written to the chip during the embedded programming cycle will be ignored. If a
hardware reset happens during programming, the data at the location being programmed will be
corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. The
Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program
cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or
program operation was performed successfully.
4.6
VPP Pin
The circuitry of the AT49BV162A(T) is designed so that the device cannot be programmed or
erased if the VPP voltage is less that 0.4V. When VPP is at 0.9V or above, normal program and
erase operations can be performed. The VPP pin cannot be left floating.
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3349H–FLASH–3/05
4.7
Program/Erase Status
The device provides several bits to determine the status of a program or erase operation: I/O2,
I/O3, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 12 and the following four sections
describe the function of these bits. To provide greater flexibility for system designers, the
AT49BV162A(T)/163A(T) contains a programmable configuration register. The configuration
register allows the user to specify the status bit operation. The configuration register can be set
to one of two different values, “00” or “01”. If the configuration register is set to “00”, the part will
automatically return to the read mode after a successful program or erase operation. If the configuration register is set to a “01”, a Product ID Exit command must be given after a successful
program or erase operation before the part will return to the read mode. It is important to note
that whether the configuration register is set to a “00” or to a “01”, any unsuccessful program or
erase operation requires using the Product ID Exit command to return the device to read mode.
The default value (after power-up) for the configuration register is “00”. Using the four-bus cycle
Set Configuration Register command as shown in the “Command Definition Table” on page 13,
the value of the configuration register can be changed. Voltages applied to the RESET pin will
not alter the value of the configuration register. The value of the configuration register will affect
the operation of the I/O7 status bit as described below.
4.7.1
DATA Polling
The AT49BV162A(T)/163A(T) features Data Polling to indicate the end of a program cycle. If the
status configuration register is set to a “00”, during a program cycle an attempted read of the last
byte/word loaded will result in the complement of the loaded data on I/O7. Once the program
cycle has been completed, true data is valid on all outputs and the next cycle may begin. During
a chip or sector erase operation, an attempt to read the device will give a “0” on I/O7. Once the
program or erase cycle has completed, true data will be read from the device. Data Polling may
begin at any time during the program cycle. Please see “Status Bit Table” on page 12 for more
details.
If the status bit configuration register is set to a “01”, the I/O7 status bit will be low while the
device is actively programming or erasing data. I/O7 will go high when the device has completed
a program or erase operation. Once I/O7 has gone high, status information on the other pins can
be checked.
The Data Polling status bit must be used in conjunction with the erase/program and VPP status
bit as shown in the algorithm in Figures 4-1 and and 4-2 on page 10.
4.7.2
Toggle Bit
In addition to Data Polling the AT49BV162A(T)/163A(T) provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive
attempts to read data from the memory will result in I/O6 toggling between one and zero. Once
the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining
the toggle bit may begin at any time during a program cycle. Please see “Status Bit Table” on
page 12 for more details.
The toggle bit status bit should be used in conjunction with the erase/program and VPP status bit
as shown in the algorithm in Figures 4-3 and and 4-4 on page 11.
6
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
4.7.3
Erase/Program Status Bit
The device offers a status bit on I/O5, which indicates whether the program or erase operation
has exceeded a specified internal pulse count limit. If the status bit is a “1”, the device is unable
to verify that an erase or a byte/word program operation has been successfully performed. If a
program (Sector Erase) command is issued to a protected sector, the protected sector will not
be programmed (erased). The device will go to a status read mode and the I/O5 status bit will be
set high, indicating the program (erase) operation did not complete as requested. Once the
erase/program status bit has been set to a “1”, the system must write the Product ID Exit command to return to the read mode. The erase/program status bit is a “0” while the erase or
program operation is still in progress. Please see “Status Bit Table” on page 12 for more details.
4.7.4
VPP Status Bit
The AT49BV162A(T) provides a status bit on I/O3, which provides information regarding the
voltage level of the VPP pin. During a program or erase operation, if the voltage on the VPP pin
is not high enough to perform the desired operation successfully, the I/O3 status bit will be a “1”.
Once the VPP status bit has been set to a “1”, the system must write the Product ID Exit command to return to the read mode. On the other hand, if the voltage level is high enough to
perform a program or erase operation successfully, the VPP status bit will output a “0”. Please
see “Status Bit Table” on page 12 for more details.
4.8
Sector Lockdown
Each sector has a programming lockdown feature. This feature prevents programming of data in
the designated sectors once the feature has been enabled. These sectors can contain secure
code that is used to bring up the system. Enabling the lockdown feature will allow the boot code
to stay in the device while data in the rest of the device is updated. This feature does not have to
be activated; any sector’s usage as a write-protected region is optional to the user.
At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector, the
six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked down,
the contents of the sector is read-only and cannot be erased or programmed.
4.8.1
Sector Lockdown Detection
A software method is available to determine if programming of a sector is locked down. When
the device is in the software product identification mode (see “Software Product Identification
Entry/Exit” sections on page 23), a read from address location 00002H within a sector will show
if programming the sector is locked down. If the data on I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown feature has been enabled and the
sector cannot be programmed. The software product identification exit code should be used to
return to standard operation.
4.8.2
Sector Lockdown Override
The only way to unlock a sector that is locked down is through reset or power-up cycles. After
power-up or reset, the content of a sector that is locked down can be erased and reprogrammed.
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3349H–FLASH–3/05
4.9
Erase Suspend/Erase Resume
The Erase Suspend command allows the system to interrupt a sector or chip erase operation
and then program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase
operation. After the erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase
Suspend command. During a sector erase suspend, another sector cannot be erased. To
resume the sector erase operation, the system must write the Erase Resume command. The
Erase Resume command is a one-bus cycle command. The device also supports an erase suspend during a complete chip erase. While the chip erase is suspended, the user can read from
any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector erase suspend are the same.
4.10
Program Suspend/Program Resume
The Program Suspend command allows the system to interrupt a programming operation and
then read data from a different byte/word within the memory. After the Program Suspend command is given, the device requires a maximum of 20 µs to suspend the programming operation.
After the programming operation has been suspended, the system can then read data from any
other byte/word that is not contained in the sector in which the programming operation was suspended. An address is not required during the program suspend operation. To resume the
programming operation, the system must write the Program Resume command. The program
suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same, and the command sequence for the erase resume
and program resume are the same.
4.11
Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It is accessed
using a software operation.
For details, see “Operating Modes” on page 17 or “Software Product Identification Entry/Exit”
sections on page 23.
4.12
128-bit Protection Register
The AT49BV162A(T)/163A(T) contains a 128-bit register that can be used for security purposes
in system design. The protection register is divided into two 64-bit blocks. The two blocks are
designated as block A and block B. The data in block A is non-changeable and is programmed
at the factory with a unique number. The data in block B is programmed by the user and can be
locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program Protection Register command must be used as
shown in the “Command Definition Table” on page 13. To lock out block B, the four-bus cycle
Lock Protection Register command must be used as shown in the “Command Definition Table” .
Data bit D1 must be zero during the fourth bus cycle. All other data bits during the fourth bus
cycle are don’t cares. To determine whether block B is locked out, the Product ID Entry command is given followed by a read operation from address 80H. If data bit D1 is zero, block B is
locked. If data bit D1 is one, block B can be reprogrammed. Please see the “Protection Register
Addressing Table” on page 14 for the address locations in the protection register. To read the
protection register, the Product ID Entry command is given followed by a normal read operation
from an address within the protection register. After determining whether block B is protected or
8
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
not, or reading the protection register, the Product ID Exit command must be given prior to performing any other operation.
4.13
RDY/BUSY
An open-drain READY/BUSY output pin provides another method of detecting the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal program and erase
cycles and is released at the completion of the cycle. The open-drain connection allows for ORtying of several devices to the same RDY/BUSY line. Please see “Status Bit Table” on page 12
for more details.
4.14
Common Flash Interface (CFI)
CFI is a published, standardized data structure that may be read from a flash device. CFI allows
system software to query the installed device to determine the configurations, various electrical
and timing parameters, and functions supported by the device. CFI is used to allow the system
to learn how to interface to the flash device most optimally. The two primary benefits of using
CFI are ease of upgrading and second source availability. The command to enter the CFI Query
mode is a one-bus cycle command which requires writing data 98h to address 55h. The CFI
Query command can be written when the device is ready to read data or can also be written
when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI
data at the addresses given in “Common Flash Interface Definition Table” on page 24. To exit
the CFI Query mode, the product ID exit command must be given.
4.15
Hardware Data Protection
The Hardware Data Protection feature protects against inadvertent programs to the
AT49BV162A(T)/163A(T) in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the
program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense
level, the device will automatically time out 10 ms (typical) before programming. (c) Program
inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Program
inhibit: VPP is less than VILPP. (e) VPP power-on delay: once VPP has reached 1.65V, program
and erase operations are inhibited for 100 ns.
4.16
Input Levels
While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE,
CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the
device. The I/O lines can only be driven from 0 to VCC + 0.6V.
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3349H–FLASH–3/05
Figure 4-1.
Data Polling Algorithm
(Configuration Register = 00)
Figure 4-2.
Data Polling Algorithm
(Configuration Register = 01)
START
START
Read I/O7 - I/O0
Addr = VA
Read I/O7 - I/O0
Addr = VA
YES
YES
I/O7 = Data?
I/O7 = Data?
NO
NO
NO
NO
I/O3, I/O5 = 1?
YES
YES
Read I/O7 - I/O0
Addr = VA
I/O7 = Data?
Read I/O7 - I/O0
Addr = VA
YES
I/O7 = Data?
NO
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Notes:
YES
NO
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Program/Erase
Operation
Successful,
Device in
Read Mode
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector
address within the sector being erased. During chip
erase, a valid address is any non-protected sector
address.
2. I/O7 should be rechecked even if I/O5 = “1” because
I/O7 may change simultaneously with I/O5.
10
I/O3, I/O5 = 1?
Notes:
Program/Erase
Operation
Successful,
Write Product ID
Exit Command
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector
address within the sector being erased. During chip
erase, a valid address is any non-protected sector
address.
2. I/O7 should be rechecked even if I/O5 = “1” because
I/O7 may change simultaneously with I/O5.
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
Figure 4-3.
Toggle Bit Algorithm
(Configuration Register = 00)
Figure 4-4.
START
START
Read I/O7 - I/O0
Read I/O7 - I/O0
Read I/O7 - I/O0
Read I/O7 - I/O0
Toggle Bit =
Toggle?
NO
Toggle Bit =
Toggle?
NO
I/O3, I/O5 = 1?
YES
Read I/O7 - I/O0
Twice
NO
Toggle Bit =
Toggle?
YES
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Note:
I/O3, I/O5 = 1?
YES
Read I/O7 - I/O0
Twice
Toggle Bit =
Toggle?
NO
YES
YES
NO
Toggle Bit Algorithm
(Configuration Register = 01)
NO
YES
Program/Erase
Operation
Successful,
Device in
Read Mode
1. The system should recheck the toggle bit even if
I/O5 = “1” because the toggle bit may stop toggling
as I/O5 changes to “1”.
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Note:
Program/Erase
Operation
Successful,
Write Product ID
Exit Command
1. The system should recheck the toggle bit even if
I/O5 = “1” because the toggle bit may stop toggling
as I/O5 changes to “1”.
11
3349H–FLASH–3/05
5. Status Bit Table
Status Bit
I/O7
I/O7
I/O6
I/O5(1)
I/O3(2)
I/O2
RDY/BUSY
00
01
00/01
00/01
00/01
00/01
00/01
I/O7
0
TOGGLE
0
0
1
0
Erasing
0
0
TOGGLE
0
0
TOGGLE
0
Erase Suspended & Read
Erasing Sector
1
1
1
0
0
TOGGLE
1
Erase Suspended & Read
Non-erasing Sector
DATA
DATA
DATA
DATA
DATA
DATA
1
Erase Suspended &
Program Non-erasing Sector
I/O7
0
TOGGLE
0
0
TOGGLE
0
Erase Suspended &
Program Suspended and
Reading from Nonsuspended Sectors
DATA
DATA
DATA
DATA
DATA
DATA
1
Program Suspended & Read
Programming Sector
I/O7
1
1
0
0
TOGGLE
1
Program Suspended & Read
Non-programming Sector
DATA
DATA
DATA
DATA
DATA
DATA
1
Configuration Register
Programming
Notes:
1. I/O5 switches to a “1” when a program or an erase operation has exceeded the maximum time limits or when a program or
sector erase operation is performed on a protected sector.
2. I/O3 switches to a “1” when the VPP level is not high enough to successfully perform program and erase operations. This
status bit is not available for the AT49BV163A(T).
12
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
6. Command Definition Table
Command
Sequence
1st Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
555
AA
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
AAA(2)
55
555
80
555
AA
AAA
55
555
10
Sector Erase
6
555
AA
AAA
55
555
80
555
AA
Byte/Word Program
4
555
AA
AAA
55
555
A0
Addr
DIN
Dual Byte/Word
Program(9)
5
555
AA
AAA
55
555
E0
Addr1
Enter Single Pulse
Program Mode
6
555
AA
AAA
55
555
80
Single Pulse
Byte/Word Program
1
Addr
DIN
Sector Lockdown
6
555
AA
AAA(2)
55
555
80
Erase/Program
Suspend
1
XXX
B0
Erase/Program
Resume
1
XXX
30
Product ID Entry
3
555
AA
AAA
55
555
90
Product ID Exit(5)
3
555
AA
AAA
55
555
F0(8)
Product ID Exit(5)
1
XXX
F0(8)
Program Protection
Register
4
555
AA
AAA
55
555
Lock Protection
Register - Block B
4
555
AA
AAA
55
Status of Block B
Protection
4
555
AA
AAA
Set Configuration
Register
4
555
AA
AAA
CFI Query
1
X55
98
Notes:
5th Bus
Cycle
(3)(4)
AAA
55
SA
DIN1
Addr2
DIN2
555
AA
AAA
55
555
A0
555
AA
AAA
55
SA(3)(4)
60
C0
Addr
DIN
555
C0
080
X0
55
555
90
80
DOUT(6)
55
555
D0
XXX
00/01(7)
30
1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8
are don’t care. The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A19 through A11
are don’t care in the word mode. Address A19 through A11 and A-1 are don’t care in the byte mode.
2. Since A11 is a Don’t Care, AAA can be replaced with 2AA.
3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see pages 15 - 16
for details).
4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power
cycled.
5. Either one of the Product ID Exit commands can be used.
6. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed.
7. The default state (after power-up) of the configuration register is “00”.
8. Bytes of data other than F0 may be used to exit the Product ID mode. However, it is recommended that F0 be used.
9. This fast programming option enables the user to program two words in parallel only when VPP = 12V. The Addresses, Addr1
and Addr2, of the two words, DIN1 and DIN2, must only differ in address A0. This command should be used during manufacturing purposes only.
13
3349H–FLASH–3/05
7. Absolute Maximum Ratings*
*NOTICE:
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.0V
8. Protection Register Addressing Table
Word
Use
Block
A7
A6
A5
A4
A3
A2
A1
A0
0
Factory
A
1
0
0
0
0
0
0
1
1
Factory
A
1
0
0
0
0
0
1
0
2
Factory
A
1
0
0
0
0
0
1
1
3
Factory
A
1
0
0
0
0
1
0
0
4
User
B
1
0
0
0
0
1
0
1
5
User
B
1
0
0
0
0
1
1
0
6
User
B
1
0
0
0
0
1
1
1
7
User
B
1
0
0
0
1
0
0
0
Note:
14
All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A19 - A8 = 0.
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
9. AT49BV162A/163A – Sector Address Table
x8
x16
Size (Bytes/Words)
Address Range (A19 - A-1)
Address Range (A19 - A0)
SA0
8K/4K
000000 - 001FFF
00000 - 00FFF
SA1
8K/4K
002000 - 003FFF
01000 - 01FFF
SA2
8K/4K
004000 - 005FFF
02000 - 02FFF
SA3
8K/4K
006000 - 007FFF
03000 - 03FFF
SA4
8K/4K
008000 - 009FFF
04000 - 04FFF
SA5
8K/4K
00A000 - 00BFFF
05000 - 05FFF
SA6
8K/4K
00C000 - 00DFFF
06000 - 06FFF
SA7
8K/4K
00E000 - 00FFFF
07000 - 07FFF
SA8
64K/32K
010000 - 01FFFF
08000 - 0FFFF
SA9
64K/32K
020000 - 02FFFF
10000 - 17FFF
SA10
64K/32K
030000 - 03FFFF
18000 - 1FFFF
SA11
64K/32K
040000 - 04FFFF
20000 - 27FFF
SA12
64K/32K
050000 - 05FFFF
28000 - 2FFFF
SA13
64K/32K
060000 - 06FFFF
30000 - 37FFF
SA14
64K/32K
070000 - 07FFFF
38000 - 3FFFF
SA15
64K/32K
080000 - 08FFFF
40000 - 47FFF
SA16
64K/32K
090000 - 09FFFF
48000 - 4FFFF
SA17
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
SA18
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
SA19
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
SA20
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
SA21
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
SA22
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
SA23
64K/32K
100000 - 10FFFF
80000 - 87FFF
SA24
64K/32K
110000 - 11FFFF
88000 - 8FFFF
SA25
64K/32K
120000 - 12FFFF
90000 - 97FFF
SA26
64K/32K
130000 - 13FFFF
98000 - 9FFFF
SA27
64K/32K
140000 - 14FFFF
A0000 - A7FFF
SA28
64K/32K
150000 - 15FFFF
A8000 - AFFFF
SA29
64K/32K
160000 - 16FFFF
B0000 - B7FFF
SA30
64K/32K
170000 - 17FFFF
B8000 - BFFFF
SA31
64K/32K
180000 - 18FFFF
C0000 - C7FFF
SA32
64K/32K
190000 - 19FFFF
C8000 - CFFFF
SA33
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
SA34
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
SA35
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
SA36
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
SA37
64K/32K
1E0000 - 1EFFFF
F0000 - F7FFF
SA38
64K/32K
1F0000 - 1FFFFF
F8000 - FFFFF
Sector
15
3349H–FLASH–3/05
10. AT49BV162AT/163AT – Sector Address Table
Sector
Size (Bytes/Words)
x8
x16
Address Range (A19 - A-1)
Address Range (A19 - A0)
SA0
64K/32K
000000 - 00FFFF
00000 - 07FFF
SA1
64K/32K
010000 - 01FFFF
08000 - 0FFFF
SA2
64K/32K
020000 - 02FFFF
10000 - 17FFF
SA3
64K/32K
030000 - 03FFFF
18000 - 1FFFF
SA4
64K/32K
040000 - 04FFFF
20000 - 27FFF
SA5
64K/32K
050000 - 05FFFF
28000 - 2FFFF
SA6
64K/32K
060000 - 06FFFF
30000 - 37FFF
SA7
64K/32K
070000 - 07FFFF
38000 - 3FFFF
SA8
64K/32K
080000 - 08FFFF
40000 - 47FFF
SA9
64K/32K
090000 - 09FFFF
48000 - 4FFFF
SA10
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
SA11
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
SA12
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
SA13
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
SA14
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
SA15
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
SA16
64K/32K
100000 - 10FFFF
80000 - 87FFF
SA17
64K/32K
110000 - 11FFFF
88000 - 8FFFF
SA18
64K/32K
120000 - 12FFFF
90000 - 97FFF
SA19
64K/32K
130000 - 13FFFF
98000 - 9FFFF
SA20
64K/32K
140000 - 14FFFF
A0000 - A7FFF
SA21
64K/32K
150000 - 15FFFF
A8000 - AFFFF
SA22
64K/32K
160000 - 16FFFF
B0000 - B7FFF
SA23
64K/32K
170000 - 17FFFF
B8000 - BFFFF
SA24
64K/32K
180000 - 18FFFF
C0000 - C7FFF
SA25
64K/32K
190000 - 19FFFF
C8000 - CFFFF
SA26
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
SA27
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
SA28
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
SA29
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
SA30
64K/32K
1E0000 - 1EFFFF
F0000 - F7FFF
SA31
8K/4K
1F0000 - 1F1FFF
F8000 - F8FFF
SA32
8K/4K
1F2000 - 1F3FFF
F9000 - F9FFF
SA33
8K/4K
1F4000 - 1F5FFF
FA000 - FAFFF
SA34
8K/4K
1F6000 - 1F7FFF
FB000 - FBFFF
SA35
8K/4K
1F8000 - 1F9FFF
FC000 - FCFFF
SA36
8K/4K
1FA000 - 1FBFFF
FD000 - FDFFF
SA37
8K/4K
1FC000 - 1FDFFF
FE000 - FEFFF
SA38
8K/4K
1FE000 - 1FFFFF
FF000 - FFFFF
16
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
11. DC and AC Operating Range
Operating Temperature (Case)
AT49BV163A(T)-55
AT49BV162A(T)/163A(T)-70
-40°C - 85°C
-40°C - 85°C
2.65V to 3.6V
2.65V to 3.6V
Ind.
VCC Power Supply
12. Operating Modes
Mode
CE
OE
WE
RESET
VPP(8)
Ai
I/O
VIL
VIL
VIH
VIH
X
Ai
DOUT
Read
Program/Erase
(2)
VIL
VIH
VIL
VIH
VIH
X(1)
X
VIH
X
X
X
VIH
VIH
X
X
VIL
X
VIH
X
X
X
X
VIH
VILPP(7)
Output Disable
X
VIH
X
VIH
X
Reset
X
X
X
VIL
X
Standby/Program Inhibit
Program Inhibit
Product Identification Software(5)
Notes:
VIHPP
(6)
Ai
DIN
X
High-Z
High-Z
VIH
X
High-Z
A0 = VIL, A1 - A19 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A19 = VIL
Device Code(4)
1. X can be VIL or VIH.
2. Refer to AC programming waveforms on page 21.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: C0H (x8)-AT49BV162A/163A; 00C0H (x16)-AT49BV162A/163A;
C2H (x8)-AT49BV162AT/163AT; 00C2H (x16)-AT49BV162AT/163AT.
5. See details under “Software Product Identification Entry/Exit” on page 23.
6. VIHPP (min) = 0.9V; VIHPP (max) = 3.6V.
7. VILPP (max) = 0.4V.
8. VPP is not available for the AT49BV163A(T).
13. DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
2
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB
VCC Standby Current CMOS
CE = VCC - 0.3V to
VCC
13
25
µA
ICC (1)
VCC Active Read Current
f = 5 MHz; IOUT = 0
mA
12
25
mA
ICC1
VCC Programming Current
40
mA
IPP1
VPP Input Load Current
5
µA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL1
Output Low Voltage
VOL2
Output Low Voltage
IOL = 1.0 mA
VOH1
Output High Voltage
IOH = -400 µA
2.4
V
VOH2
Output High Voltage
IOH = -100 µA
2.5
V
Note:
Min
Typ
2.0
IOL = 2.1 mA
V
0.45
V
0.20
V
1. In the erase mode, ICC is 45 mA.
17
3349H–FLASH–3/05
14. AC Read Characteristics
AT49BV163A(T)-55
Min
AT49BV162A(T)/163A(T)-70
Symbol
Parameter
Max
Min
tRC
Read Cycle Time
tACC
Address to Output Delay
55
70
ns
tCE(1)
CE to Output Delay
55
70
ns
tOE(2)
OE to Output Delay
0
20
0
20
ns
tDF(3)(4)
CE or OE to Output Float
0
25
0
25
ns
tOH
Output Hold from OE, CE or Address,
whichever occurred first
0
tRO
RESET to Output Delay
55
Max
70
ns
0
100
Units
ns
100
ns
15. AC Read Waveforms(1)(2)(3)(4)
tRC
ADDRESS
ADDRESS VALID
CE
tCE
tOE
OE
tDF
tOH
tACC
tRO
RESET
OUTPUT
Notes:
HIGH Z
OUTPUT
VALID
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
18
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
16. Input Test Waveforms and Measurement Level
tR, tF < 5 ns
17. Output Test Load
18. Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
19
3349H–FLASH–3/05
19. AC Byte/Word Load Characteristics
Symbol
Parameter
Min
Max
Units
tAS, tOES
Address, OE Setup Time
0
ns
tAH
Address Hold Time
35
ns
tCS
Chip Select Setup Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
35
ns
tDS
Data Setup Time
35
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
35
ns
20. AC Byte/Word Load Waveforms
20.1
WE Controlled
20.2
CE Controlled
20
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
21. Program Cycle Characteristics
Symbol
Parameter
tBP
Min
Typ
Max
Units
Byte/Word Programming Time
12
200
µs
tBPD
Byte/Word Programming Time in Dual Programming Mode
6
100
µs
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
35
ns
tDS
Data Setup Time
35
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
35
ns
tWPH
Write Pulse Width High
35
ns
tWC
Write Cycle Time
70
ns
tRP
Reset Pulse Width
500
ns
tEC
Chip Erase Cycle Time
25
tSEC1
Sector Erase Cycle Time (4K Word Sectors)
0.3
3.0
seconds
tSEC2
Sector Erase Cycle Time (32K Word Sectors)
1.0
5.0
seconds
tES
Erase Suspend Time
15
µs
tPS
Program Suspend Time
10
µs
seconds
22. Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tBP
tWPH
WE
tAS
tAH
A0 - A19
tDH
555
555
AAA
tWC
555
ADDRESS
tDS
DATA
55
AA
INPUT
DATA
A0
AA
23. Sector or Chip Erase Cycle Waveforms
OE
(1)
CE
tWP
tWPH
WE
tAS
A0-A19
tAH
Notes:
555
555
AAA
tWC
DATA
tDH
555
Note 2
AAA
tEC
tDS
AA
55
80
AA
55
Note 3
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
(See note 3 under “Command Definition Table” on page 13.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
21
3349H–FLASH–3/05
24. Data Polling Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
Max
(2)
tOE
OE to Output Delay
tWR
Write Recovery Time
Notes:
Typ
Units
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 18.
25. Data Polling Waveforms
WE
CE
tOEH
OE
tDH
I/O7
tOE
A0-A19
tWR
HIGH Z
An
An
An
An
An
26. Toggle Bit Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay(2)
tOEHP
OE High Pulse
50
ns
tWR
Write Recovery Time
0
ns
Notes:
Typ
Max
Units
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 18.
27. Toggle Bit Waveforms(1)(2)(3)
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
22
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
28. Software Product Identification
Entry(1)
30. Sector Lockdown Enable
Algorithm(1)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 80
TO
ADDRESS 555
LOAD DATA 90
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA 55
TO
ADDRESS AAA
29. Software Product Identification
Exit(1)(6)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
OR
LOAD DATA F0
TO
ANY ADDRESS
LOAD DATA 60
TO
SECTOR ADDRESS
EXIT PRODUCT
IDENTIFICATION
MODE(4)
LOAD DATA F0
TO
ADDRESS 555
PAUSE 200 µs(2)
Notes:
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t
Care).
2. Sector Lockdown feature enabled.
EXIT PRODUCT
IDENTIFICATION
MODE(4)
Notes:
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t
Care).
2. A1 - A19 = VIL. Manufacturer Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if powered down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 1FH(x8); 001FH(x16)
Device Code:C0H (x8) - AT49BV162A/163A;
00C0H (x16) - AT49BV162A/163A;
C2H (x8) - AT49BV162AT/163AT;
00C2H (x16) - AT49BV162AT/163AT.
6. Either one of the Product ID Exit commands can be used.
23
3349H–FLASH–3/05
31. Common Flash Interface Definition Table
24
Address
[x16 Mode]
Address
[x8 Mode]
Data
10h
20h
0051h
“Q”
11h
22h
0052h
“R”
12h
24h
0059h
“Y”
13h
26h
0002h
14h
28h
0000h
15h
2Ah
0041h
16h
2Ch
0000h
17h
2Eh
0000h
18h
30h
0000h
19h
32h
0000h
1Ah
34h
0000h
1Bh
36h
0027h
VCC min write/erase
1Ch
38h
0036h
VCC max write/erase
1Dh
3Ah
00B5h
VPP min voltage
1Eh
3Ch
00C5h
VPP max voltage
1Fh
3Eh
0004h
Typ word write – 12 µs
20h
40h
0000h
21h
42h
000Ah
Typ block erase: 1,000 ms
22h
44h
0010h
Typ chip erase: 25,000 ms
23h
46h
0004h
Max word write/typ time
24h
48h
0000h
N/A
25h
4Ah
0002h
Max block erase/typ block erase
26h
4Ch
0002h
Max chip erase/typ chip erase
27h
4Eh
0015h
Device size
28h
50h
0002h
x8/x16 device
29h
52h
0000h
x8/x16 device
2Ah
54h
0000h
Multiple byte write not supported
2Bh
56h
0000h
Multiple byte write not supported
2Ch
58h
0002h
2 regions, X = 2
2Dh
5Ah
001Eh
64K bytes, Y = 30
2Eh
5Ch
0000h
64K bytes, Y = 30
2Fh
5Eh
0000h
64K bytes, Z = 256
30h
60h
0001h
64K bytes, Z = 256
31h
62h
0007h
8K bytes, Y = 7
32h
64h
0000h
8K bytes, Y = 7
33h
66h
0020h
8K bytes, Z = 32
34h
68h
0000h
8K bytes, Z = 32
Comments
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
31. Common Flash Interface Definition Table (Continued)
Address
[x16 Mode]
Address
[x8 Mode]
Data
Comments
Vendor Specific Extended Query
41h
82h
0050h
“P”
42h
84h
0052h
“R”
43h
86h
0049h
“I”
44h
88h
0031h
Major version number, ASCII
45h
8Ah
0030h
Minor version number, ASCII
Bit 0 – chip erase supported, 0 – no, 1 – yes
Bit 1 – erase suspend supported, 0 – no, 1 – yes
Bit 2 – program suspend supported, 0 – no, 1 – yes
Bit 3 – simultaneous operations supported,
0 – no, 1 – yes
Bit 4 – burst mode read supported, 0 – no, 1 – yes
Bit 5 – page mode read supported, 0 – no, 1 – yes
Bit 6 – queued erase supported, 0 – no, 1 – yes
Bit 7 – protection bits supported, 0 – no, 1 – yes
46h
8Ch
0087h
47h
8Eh
0000h (top) or
0001h (bottom)
Bit 8 – top (“0”) or bottom (“1”) boot block device undefined bits
are “0”
48h
90h
0000h
Bit 0 – 4-word linear burst with wrap around,
0 – no, 1 – yes
Bit 1 – 8-word linear burst with wrap around,
0 – no, 1 – yes
Bit 2 – continuos burst, 0 – no, 1 – yes
Undefined bits are “0”
49h
92h
0000h
Bit 0 – 4-word page, 0 – no, 1 – yes
Bit 1 – 8-word page, 0 – no, 1 – yes
Undefined bits are “0”
4Ah
94h
0080h
Location of protection register lock byte, the section’s first byte
4Bh
96h
0003h
# of bytes in the factory prog section of prot register – 2*n
4Ch
98h
0003h
# of bytes in the user prog section of prot register – 2*n
25
3349H–FLASH–3/05
32. Ordering Information
32.1
AT49BV162A(T) Standard Package
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
70
25
0.025
AT49BV162A-70CI
AT49BV162A-70TI
48C19
48T
Industrial
(-40° to 85°C)
70
25
0.025
AT49BV162AT-70CI
AT49BV162AT-70TI
48C19
48T
Industrial
(-40° to 85°C)
Green Package Option (Pb/Halide-free)
70
25
0.025
AT49BV162A-70CU
AT49BV162A-70TU
48C19
48T
Industrial
(-40° to 85°C)
70
25
0.025
AT49BV162AT-70CU
AT49BV162AT-70TU
48C19
48T
Industrial
(-40° to 85°C)
32.2
AT49BV163A(T) Standard Package
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
70
25
0.025
AT49BV163A-70TI
48T
Industrial
(-40° to 85°C)
70
25
0.025
AT49BV163AT-70TI
48T
Industrial
(-40° to 85°C)
Green Package Option (Pb/Halide-free)
55
25
0.025
AT49BV163A-55CU
48C19
Industrial
(-40° to 85°C)
55
25
0.025
AT49BV163AT-55CU
48C19
Industrial
(-40° to 85°C)
55
25
0.025
AT49BV163A-55TU
48T
Industrial
(-40° to 85°C)
55
25
0.025
AT49BV163AT-55TU
48T
Industrial
(-40° to 85°C)
70
25
0.025
AT49BV163A-70TU
48T
Industrial
(-40° to 85°C)
70
25
0.025
AT49BV163AT-70TU
48T
Industrial
(-40° to 85°C)
Package Type
48C19
48-ball, Plastic Chip-Size Ball Grid Array Package (CBGA)
48T
48-lead, Plastic Thin Small Outline Package (TSOP)
26
AT49BV162/163A(T)
3349H–FLASH–3/05
AT49BV162/163A(T)
33. Packaging Information
33.1
48C19 – CBGA
E
A1 Ball ID
D
A1
Top View
A
Side View
E1
1.0 REF
e
A1 Ball Corner
1.20 REF
A
COMMON DIMENSIONS
(Unit of Measure = mm)
B
C
SYMBOL
D
D1
E
E
F
E1
G
D
MIN
NOM
MAX
5.90
6.00
6.10
NOTE
4.0 TYP
7.90
8.00
8.10
H
e
6
5
4
3
2
1
Øb
Bottom View
D1
5.6 TYP
A
–
–
1.0
A1
0.22
–
–
e
b
Ø
0.80 BSC
0.40 TYP
7/2/03
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
48C19, 48-ball (6 x 8 Array), 0.80 mm Pitch,
6.0 x 8.0 x 1.0 mm Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
48C19
REV.
A
27
3349H–FLASH–3/05
33.2
48T – TSOP
PIN 1
0º ~ 8º
c
Pin 1 Identifier
D1 D
L
b
e
L1
A2
E
A
GAGE PLANE
SEATING PLANE
COMMON DIMENSIONS
(Unit of Measure = mm)
A1
MIN
NOM
MAX
A
–
–
1.20
A1
0.05
–
0.15
A2
0.95
1.00
1.05
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
Note 2
E
11.90
12.00
12.10
Note 2
L
0.50
0.60
0.70
SYMBOL
Notes:
1. This package conforms to JEDEC reference MO-142, Variation DD.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
L1
0.25 BASIC
b
0.17
0.22
0.27
c
0.10
–
0.21
e
NOTE
0.50 BASIC
10/18/01
R
28
2325 Orchard Parkway
San Jose, CA 95131
TITLE
48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline
Package, Type I (TSOP)
DRAWING NO.
REV.
48T
B
AT49BV162/163A(T)
3349H–FLASH–3/05
Atmel Corporation
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Tel: 1(408) 441-0311
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3349H–FLASH–3/05