BSP 320S SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 60 V RDS(on) 0.12 Ω ID 2.9 A • dv/dt rated 4 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin 2/4 Pin 3 BSP320S SOT-223 Q67000-S4001 G D S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Value Continuous drain current ID 2.9 Pulsed drain current IDpulse 11.6 Unit A T A = 25 ˚C Avalanche energy, single pulse EAS 60 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 2.9 A EAR 0.18 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W ˚C I D = 2.9 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 2.9 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 ˚C T A = 25 ˚C Operating temperature Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 BSP 320S Electrical Characteristics Symbol Parameter at Tj = 25 ˚C, unless otherwise specified Values Unit min. typ. max. - 17 - Thermal Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS SMD version, device on PCB: RthJA K/W K/W @ min. footprint - 110 - @ 6 cm 2 cooling area1) - - 70 V(BR)DSS 60 - - Gate threshold voltage, VGS = VDS I D = 20 µA VGS(th) 2.1 3 4 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA µA VDS = 60 V, V GS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 60 V, V GS = 0 V, T j = 150 ˚C - - 100 IGSS - 10 100 nA RDS(on) - 0.09 0.12 Ω Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, I D = 2.9 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSP 320S Electrical Characteristics Symbol Parameter Values Unit min. typ. max. g fs 2.5 5.8 - S Ciss - 275 340 pF Coss - 90 120 Crss - 50 65 td(on) - 11 17 tr - 25 40 td(off) - 25 40 tf - 35 55 at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 2.9 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Fall time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Data Sheet 3 05.99 BSP 320S Electrical Characteristics Symbol Parameter Values Unit min. typ. max. QG(th) - 0.25 0.3 nC Qg(7) - 7.4 9.3 nC Qg - 9.7 12 V(plateau) - 4.7 - V IS - - 2.9 A I SM - - 11.6 VSD - 0.95 1.2 V t rr - 45 56 ns Q rr - 0.08 0.12 µC at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS = 1 V Gate charge at Vgs=7V VDD = 40 V, ID = 2.9 A, VGS = 0 to 7 V Gate charge total VDD = 40 V, ID = 2.9 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 2.9 A Reverse Diode Inverse diode continuous forward current TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 5.8 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSP 320S Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) BSP320S BSP320S 1.9 3.2 W A 1.4 2.4 1.2 2.0 ID Ptot 1.6 1.0 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 0.0 0 160 TA Safe operating area 20 40 80 100 120 ˚C ZthJA = f(tp ) parameter : D = 0 , TA = 25 ˚C parameter : D = tp /T 2 BSP320S 10 2 160 TA Transient thermal impedance ID = f ( V DS ) 10 60 BSP320S K/W A /ID 10 1 = S( V tp = 130.0µs DS 10 1 ) on ZthJA ID RD 1 ms 10 0 10 0 D = 0.50 10 ms 0.20 0.10 0.05 10 -1 10 -1 single pulse 0.02 0.01 DC 10 -2 -1 10 10 0 10 1 V 10 2 s 10 4 tp VDS Data Sheet 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 5 05.99 BSP 320S Typ. output characteristics Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) parameter: tp = 80 µs parameter : ID = 2.9 A, VGS = 10 V lBSP320S 7.0 BSP320S Ptot = 2W 0.30 Ω A k jh ig 6.0 fed VGS [V] a 4.0 ID 5.0 c 4.5 4.0 3.5 3.0 b 2.5 2.0 b 4.5 c 5.0 d 5.5 0.24 RDS(on) 5.5 0.18 6.0 f 6.5 g 7.0 h 7.5 0.14 i 8.0 0.12 j 9.0 k 10.0 l 20.0 0.16 98% typ 0.10 0.08 0.06 a 0.04 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.02 V 0.00 -60 5.0 VDS Data Sheet 0.20 e 1.5 1.0 0.22 -20 20 60 100 ˚C 180 Tj 6 05.99 BSP 320S Typ. transfer characteristics I D= f ( VGS ) Gate threshold voltage parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 µA 14 5.2 V A 4.4 4.0 ID VGS(th) 10 3.6 3.2 8 2.8 max 2.4 6 2.0 1.6 4 typ 1.2 0.8 2 min 0.4 0 0 1 2 3 4 5 V 0.0 -60 7 -20 20 60 100 140 VGS V 200 Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 BSP320S A pF Cis C IF 10 1 10 2 Cos Crs 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 V 10 -1 0.0 35 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BSP 320S Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 2.9 A,VDD = 25 V VGS = f (QGate ) RGS = 25 Ω parameter: ID puls =2.9A BSP320S 65 16 mJ V 55 50 12 VGS EAS 45 40 10 35 0,2 VDS max 8 30 25 0,8 VDS max 6 20 4 15 10 2 5 0 20 40 60 80 100 ˚C 120 0 0 160 Tj 2 4 6 8 10 12 nC 15 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP320S 72 V(BR)DSS V 68 66 64 62 60 58 56 54 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99