APTM100DA18T CR1 OUT Q2 G2 S2 0/VBU S NTC1 G2 S2 VBUS VBUS SENSE 0/VBUS OUT OUT S2 NTC2 G2 NTC1 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 43 33 172 ±30 215 780 25 50 3000 Unit V A V mΩ W A June, 2005 NTC2 VBUS VBUS SENSE VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100DA18T– Rev 1 Boost chopper MOSFET Power Module APTM100DA18T All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Min VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 180 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 500V ID = 43A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max Unit µA mΩ V nA nF nC 18 12 40 1800 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω 2846 µJ 1246 µJ 1558 Min Tj = 125°C Typ 60 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 760 Tj = 125°C 3600 T c = 100°C ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5Ω Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt = 200A/µs IF = 60A VR = 667V di/dt = 200A/µs Unit 244 Chopper diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current Typ 10.4 1.76 0.32 372 Max 500 2000 215 5 ±150 48 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω Rise Time Typ Max Unit A 2.5 V ns June, 2005 Symbol nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM100DA18T– Rev 1 Electrical Characteristics APTM100DA18T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Max 0.16 0.9 2500 -40 -40 -40 1.5 RT = Min R 25 °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T APT website – http://www.advancedpower.com 3–6 APTM100DA18T– Rev 1 June, 2005 Package outline (dimensions in mm) APTM100DA18T Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.3 0.06 0.04 0.1 0.05 0 0.00001 Single Pulse 0.02 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 160 7V 80 6.5V 60 6V 40 5.5V 20 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 ID, Drain Current (A) 120 100 80 60 TJ =25°C 40 20 5V 0 0 5 10 15 20 25 TJ =125°C 30 0 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 45 Normalized to VGS =10V @ 21.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.9 0.8 40 35 30 25 20 15 10 5 0 0 20 40 60 80 ID, Drain Current (A) 100 120 25 50 75 100 125 150 TC, Case Temperature (°C) June, 2005 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ =-55°C 0 APT website – http://www.advancedpower.com 4–6 APTM100DA18T– Rev 1 I D, Drain Current (A) VGS =15, 10&8V 100 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=21.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10 Single pulse TJ =150°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=43A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) June, 2005 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM100DA18T– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100DA18T APTM100DA18T Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =2.5Ω T J=125°C L=100µH 120 80 0 40 tr 0 10 30 50 70 90 10 30 50 70 I D, Drain Current (A) I D, Drain Current (A) 7 Eon VDS=670V RG=2.5Ω TJ=125°C L=100µH Switching Energy (mJ) Switching Energy (mJ) 3 Eoff 2 1 0 5 4 Eon 3 2 1 30 50 70 90 0 5 I D, Drain Current (A) Operating Frequency vs Drain Current 15 20 Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 200 Frequency (kHz) 10 Gate Resistance (Ohms) 250 ZVS ZCS 150 50 Eoff V DS =670V ID=43A T J=125°C L=100µH 6 0 10 100 90 Switching Energy vs Gate Resistance Switching Energy vs Current 5 4 tf 20 t d(on) 40 V DS =670V RG =2.5Ω T J=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 VDS=670V D=50% RG=2.5Ω T J=125°C Tc=75°C Hard switching 0 15 20 25 30 35 ID, Drain Current (A) 40 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100DA18T– Rev 1 June, 2005 10 100