Renesas BCR3PM-12LA-A8 Triac low power use Datasheet

BCR3PM-12L
Triac
Low Power Use
REJ03G0301-0200
Rev.2.00
Nov.08.2004
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
IT (RMS) : 3 A
VDRM : 600 V
IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5
Viso : 2000 V
Outline
TO-220F
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2
3
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.2.00,
Nov.08.2004,
page 1 of 6
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
720
V
V
BCR3PM-12L
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
3.0
Unit
A
Surge on-state current
ITSM
30
A
I2 t
3.7
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
W
W
V
A
°C
°C
g
V
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 107°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
20Note5
20Note5
20Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2
—
—
—
—
4.5
V
°C/W
Gate non-trigger voltage
Thermal resistance
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5
—
—
V/µs
Tj = 125°C
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.2.00,
Nov.08.2004,
page 2 of 6
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR3PM-12L
Performance Curves
102
7 Tj = 25°C
5
3
2
Surge On-State Current (A)
100
7
5
3
2
–1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
20
15
10
5
2 3
5 7 10
1
2 3
5 7 10
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PGM = 3W
PG(AV) = 0.3W
IGM =
0.5A
VGT
0
IRGT I
IFGT I, IRGT III
VGD = 0.2V
10–1 0
10 2 3 5 7101 2 3 5 7102 2 3 5 7103
103
7
5
3
2
2
Typical Example
IRGT III
102
I
I
7 FGT I, RGT I
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
10
7
5
Typical Example
3
2
2
10
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.2.00,
25
Conduction Time (Cycles at 60Hz)
1
10
7
5
3
2
30
On-State Voltage (V)
102
7
5
3
2
10
7
5
3
2
35
0 0
10
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
40
101
7
5
3
2
10
Rated Surge On-State Current
Nov.08.2004,
page 3 of 6
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7103 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60Hz)
BCR3PM-12L
Allowable Case Temperature vs.
RMS On-State Current
160
4.5
140
4.0
360° Conduction
3.5 Resistive,
3.0 inductive loads
2.5
2.0
1.5
1.0
of conduction angle
80
60
40
360° Conduction
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
140
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
120
100
80
60 All fins are black painted
aluminum and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
Natural convection
Ambient Temperature (°C)
Ambient Temperature (°C)
100 Curves apply regardless
RMS On-State Current (A)
0
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
120
20 Resistive,
0.5
0
0
Rev.2.00,
Case Temperature (°C)
5.0
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
105
7
5
3
2
Typical Example
104
7
5
3
2
3
10
7
5
3
2
2
10
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Nov.08.2004,
page 4 of 6
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
3.0
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
103
7
5
3
2
Distribution
102
7
5
3
2
T2+, G–
Typical Example
1
10
7
5
3 T2+, G+
Typical Example
2
T2–, G–
0
10
–60 –40–20 0 20 40 60 80 100 120 140
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics
160
Typical Example
Tj = 125°C
140
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
BCR3PM-12L
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
7
5
3
2
1
10
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
III Quadrant
Minimum
100
7 0
10
I Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
3
10
7
5
3
2
6Ω
Typical Example
6Ω
IRGT III
IRGT I
IFGT I
A
6V
102
7
5
6Ω
A
6V
2 3
5 7 10
1
2 3
5 7 10
Nov.08.2004,
page 5 of 6
2
V
V
330Ω
Test Procedure II
Test Procedure I
3
2
101 0
10
A
6V
330Ω
V
Gate Current Pulse Width (µs)
Rev.2.00,
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
3 Characteristics
Value
2
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
330Ω
Test Procedure III
BCR3PM-12L
Package Dimensions
TO-220F
EIAJ Package Code
JEDEC Code

Conforms
Mass (g) (reference value)
Lead Material
2.0
Cu alloy
10.5 max
2.8
17
8.5
5.0
1.2
5.2
3.6
φ 3.2 ± 0.2
13.5 min
1.3 max
0.8
0.5
2.54
2.6
Symbol
4.5
2.54
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name +A
Lead form
Plastic Magazine (Tube)
50 Type name +A – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.08.2004,
page 6 of 6
Standard order
code example
BCR3PM-12LA
BCR3PM-12LA-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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