D44H Series (NPN), D45HSeries (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • • • • Low Collector−Emitter Saturation Voltage Fast Switching Speeds Complementary Pairs Simplifies Designs These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com 10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS COLLECTOR 2, 4 MAXIMUM RATINGS Rating Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Symbol Value VCEO Vdc Vdc IC 10 Adc Collector Current − Peak (Note 1) ICM 20 Adc Total Power Dissipation @ TC = 25°C @ TA = 25°C PD °C −55 to +150 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.8 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 275 °C 1 TO−220 CASE 221A STYLE 1 2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 D4xHyyG AYWW 3 D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device November, 2014 − Rev. 13 MARKING DIAGRAM 4 THERMAL CHARACTERISTICS © Semiconductor Components Industries, LLC, 2014 EMITTER 3 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. Characteristic 1 BASE 70 2.0 TJ, Tstg COLLECTOR 2, 4 EMITTER 3 60 80 5.0 Operating and Storage Junction Temperature Range 1 BASE Unit VEB Collector Current − Continuous NPN PNP Package Shipping D44H8G TO−220 (Pb−Free) 50 Units/Rail D44H11G TO−220 (Pb−Free) 50 Units/Rail D45H8G TO−220 (Pb−Free) 50 Units/Rail D45H11G TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: D44H/D D44H Series (NPN), D45H Series (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 60 80 − − − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO − − 10 mA 60 40 − − − − − − 1.0 − − 1.5 − − 90 160 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc) D44H8, D45H8 D44H11, D45H11 ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc) hFE Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Ccb D44H Series D45H Series pF fT D44H Series D45H Series MHz SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) td + tr D44H Series D45H Series ns ts D44H Series D45H Series ns tf D44H Series D45H Series ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 D44H Series (NPN), D45H Series (PNP) 1000 1000 VCE = 1 V 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 125°C −40°C 100 125°C 25°C 100 −40°C 10 10 0.01 0.1 1 0.01 10 10 IC, COLLECTOR CURRENT (AMPS) Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain 1000 VCE = 5 V VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1 IC, COLLECTOR CURRENT (AMPS) 1000 25°C 125°C −40°C 100 10 125°C 25°C 100 −40°C 10 0.01 0.1 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain 0.6 0.40 VCE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 0.1 0.35 0.30 −40°C 0.25 0.20 25°C 0.15 125°C 0.10 0.05 VCE(sat) @ IC/IB = 10 0.5 0.4 −40°C 0.3 25°C 125°C 0.2 0.1 0 0 0.1 1 0.1 10 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage www.onsemi.com 3 10 D44H Series (NPN), D45H Series (PNP) 1.4 VBE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.2 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 0.1 1 10 0.1 Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage PD, POWER DISSIPATION (WATTS) 1.0 ms 100 ms 10 10 ms TC ≤ 70° C dc DUTY CYCLE ≤ 50% 1.0 1.0 ms 0.5 0.3 0.2 D44H/45H8 D44H/45H10,11 TA TC 3.0 60 2.0 40 TC 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TA 1.0 20 0 0.1 1.0 0 0 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Maximum Rated Forward Bias Safe Operating Area 1.0 0.7 0.5 60 100 120 80 T, TEMPERATURE (°C) 140 160 Figure 10. Power Derating 0.2 0.2 0.1 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 40 D = 0.5 0.3 0.07 0.05 10 IC, COLLECTOR CURRENT (AMPS) 50 30 20 5.0 3.0 2.0 1 IC, COLLECTOR CURRENT (AMPS) 100 IC, COLLECTOR CURRENT (AMPS) VBE(sat) @ IC/IB = 10 1.2 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 11. Thermal Response www.onsemi.com 4 20 50 100 200 500 1.0 k D44H Series (NPN), D45H Series (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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