Comchip MOSFET SMD Diode Specialist CJ2101-G RoHS Device V(BR)DSS RDS(on)MAX SOT-323 ID 100mΩ @ -4.5V -20V 140mΩ @ -2.5V 0.087(2.20) 0.079(2.00) -1.4A D 210mΩ @ -1.8V 0.053(1.35) 0.045(1.15) G 0.055(1.40) 0.047(1.20) S 0.006(0.15) 0.003(0.08) Features 0.043(1.10) 0.035(0.90) - P-Channel MOSFET 0.096(2.45) 0.085(2.15) - Leading trench technology for low RDS(on) extending battery life 0.004(0.10) 0.000(0.00) 0.016(0.40) 0.008(0.20) 0.017(0.425)REF. Mechanical data Dimensions in inches and (millimeter) - Case: SOT-323, molded plastic. Circuit diagram - Terminals: Solderable per MIL-STD-750, method 2026. - 1. GATE - 2. SOURCE - 3. DRAIN - Weight: 0.008 grams(approx.). 3 D 1 G S 2 Maximum Ratings (at Ta=25 °C unless otherwise noted) Symbol Value Unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±8 V ID -1.4 Pulsed drain current (tp=10µs) IDM -3.0 Power dissipation PD 0.29 W RΘJA 431 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -50 ~ +150 °C Parameter Continuous drain current A Thermal resistance from junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR37 Page 1 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-source breakdown voltage VDSS VGS = 0V , ID = -250µA Gate-source leakage IGSS VDS = 0V , VGS = ±8V ±100 nA Zero gate voltage drain current IDSS VDS = -20V , VGS = 0V -1 µA -20 V OFF CHARACTERISTICS (note 1) Gate-source threshold voltage Drain-source on-state resistance VGS(th) RDS(on) VDS = VGS , ID = -250µA -0.45 V -0.7 VGS = -4.5V , ID = -1.0A 100 VGS = -2.5V , ID = -0.5A 140 VGS = -1.8V , ID = -0.3A 210 mΩ CHARGE AND CAPACITANCES (note 3) Input capacitance ciss Output capacitance Coss Reverse transfer capacitance Crss 640 VDS = -8.0V , VGS = 0V, f = 1MHZ pF 120 82 SWITCHING CHARACTERISTICS (note 2,3) Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) 6.2 VGS = -4.5V , VDD = -4.0V 15 ID = -1.0A , Rg = 6.2Ω 26 nS 18 tf DRAIN-SOURCE BODY DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0V, IS = -0.3A -0.62 -1.2 V Notes: 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Switching characteristics are independent of operating junction temperature. 3. These parameters have no way to verify. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR37 Page 2 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist RATING AND TYPICAL CHARACTERISTIC CURVES ( CJ2101-G ) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics -10 -10 Ta=25°C VGS=-2.2V -8 -8 VGS=-2.0V Drain Current, ID (A) Drain Current, ID(A) Ta=25°C Pulsed VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V Pulsed -6 VGS=-1.8V VGS=-1.6V -4 -6 -4 VGS=-1.4V -2 -2 VGS=-1.2V VGS=-1.0V -0 -0 -0 -1 -3 -2 -4 -0 -5 -1 -2 -3 Gate to Source Voltage,VGS (V) Drain to Soruce Voltage, VDS (A) Fig.4 - RDS(ON) — VGS Fig.3 - RDS(ON) — ID 200 120 Ta=25°C Pulsed Ta=25°C VGS=-1.8V ON-Resistance, RDS(ON) ( mΩ ) Pulsed ON-Resistance, RDS(ON) ( mΩ ) -4 150 VGS=-2.5V 100 VGS=-4.5V 0 100 ID=-1.0A 80 ID=-0.5A ID=-0.3A 60 0 -0 -4 -2 -8 -6 -10 -0 Drain Current, ID (A) -6 -12 -18 Gate to Source Voltage, VGS (V) Fig.5 - IS — VSD -4 Source Current, Is ( A) -1 -0.1 Ta=25°C -0.01 -0.2 Pulsed -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Source to Drain Voltage, VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR37 Page 3 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Reel Taping Specification P1 F E d P0 XXX 1 W B 3 2 C A P 12 o 0 D2 D1 D W1 SOT-323 SOT-323 SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.05 2.55 ± 0.05 1.19 ± 0.05 1.55 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.089 ± 0.002 0.100 ± 0.002 0.047 ± 0.002 0.061 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30/-0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012/-0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR37 Page 4 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Marking Code 3 Part Number Marking Code CJ2101-G TS1 XXX 1 2 xxx = Product type marking code Suggested PAD Layout A SOT-323 SIZE (mm) (inch) A 0.50 0.020 B 0.80 0.031 C 1.30 0.012 D 2.20 0.087 E 3.00 0.118 B D E C Standard Packaging REEL PACK Case Type SOT-323 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR37 Page 5 Comchip Technology CO., LTD.