AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 14A RDS(ON) (at VGS=10V) < 0.38Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT14N50L & AOTF14N50L & AOB14N50L Top View TO-220 TO-263 D D2PAK TO-220F D G AOT14N50 G D S G AOTF14N50 D S S AOB14N50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50/AOB14N50 Drain-Source Voltage 500 VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C S G AOTF14N50 ±30 14 ID V 14* 11 IDM Units V 11* A 56 Avalanche Current C IAR 6 A Repetitive avalanche energy C EAR 540 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 1080 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG PD 50 0.4 TL Symbol RθJA RθCS -55 to 150 W/ oC °C 300 °C AOT14N50/AOB14N50 65 AOTF14N50 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev6: Jul 2011 278 2.2 www.aosmd.com Page 1 of 6 AOT14N50/AOB14N50/AOTF14N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.5 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 ±100 3.3 µA 4.2 4.5 nΑ V 0.38 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A 0.29 gFS Forward Transconductance VDS=40V, ID=7A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 14 A ISM Maximum Body-Diode Pulsed Current 56 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1531 1914 2297 pF VGS=0V, VDS=25V, f=1MHz 153 191 229 pF 11 16 20 pF VGS=0V, VDS=0V, f=1MHz 1.75 3.5 5.3 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge S 0.71 VGS=10V, VDS=400V, ID=14A 42.8 51 nC 9.3 11 nC nC Qgd Gate Drain Charge 20.3 24 tD(on) Turn-On DelayTime 44 53 ns tr Turn-On Rise Time 84 101 ns tD(off) Turn-Off DelayTime 92 110 ns tf trr Turn-Off Fall Time 50 60 ns 289 347 4.93 6 ns µC Qrr VGS=10V, VDS=250V, ID=14A, RG=25Ω IF=14A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev6: Jul 2011 www.aosmd.com Page 2 of 6 AOT14N50/AOB14N50/AOTF14N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V -55°C VDS=40V 6.5V 25 10 6V ID(A) ID (A) 20 15 10 125°C VGS=5.5V 1 25°C 5 0 0.1 0 5 10 15 20 25 30 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 0.5 3 0.5 2.5 Normalized On-Resistance RDS(ON) (Ω ) VDS (Volts) Fig 1: On-Region Characteristics 0.4 VGS=10V 0.4 0.3 0.3 VGS=10V ID=7A 2 1.5 1 0.5 0.2 0 5 10 15 20 25 0 30 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 1.0E+00 40 125°C IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 1.0E-01 25°C 1.0E-02 1.0E-03 0.9 1.0E-04 1.0E-05 0.8 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev6: Jul 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT14N50/AOB14N50/AOTF14N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=400V ID=14A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 100 10µs 10µs RDS(ON) limited 1ms 10ms 1 DC 0.1s RDS(ON) limited 10 100µs 100µs ID (Amps) 10 ID (Amps) 0.1 60 1ms 1 DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 0.1 0.01 10ms 0.1s 1s 10s 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT14N50/AOB14N50 (Note F) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF14N50 (Note F) 18 Current rating ID(A) 15 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev6: Jul 2011 www.aosmd.com Page 4 of 6 AOT14N50/AOB14N50/AOTF14N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT14N50/AOB14N50 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF14N50 (Note F) Rev6: Jul 2011 www.aosmd.com Page 5 of 6 AOT14N50/AOB14N50/AOTF14N50 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev6: Jul 2011 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6