BAW56/BAV70/BAV99 SOT-23 Plastic-Encapsulate Diodes Switching Diodes Features SOT- 23 ● Fast Switching Speed ● For General Purpose Switching Applications ● High Conductance 3 Marking: 2 BA W56 BAV99 BAV70 MARKING:A1 MARKING A4 1 MARKING:A7 Parameter Symbol Limit Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFSM 2.0 A PD 225 mW RθJA 556 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Reverse breakdown voltage VR Min Typ Max 70 Unit Conditions V IR=100μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 2.5 μA VR=70V Capacitance between terminals CT 1.5 pF VR=0,f=1MHz Reverse recovery time t rr 6 ns Forward voltage IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω High Diode Semiconductor 1 Typical Characteristics Forward Reverse Characteristics Characteristics 1000 300 100 (nA) REVERSE CURRENT IR FORWARD CURRENT 10 Ta=100℃ 100 Ta =2 5℃ Ta =1 00 ℃ 30 IF (mA) 300 3 1 30 10 Ta=25℃ 3 0.3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 0 1.6 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 1.4 300 Ta=25℃ f=1MHz (mW) PD 1.3 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.2 1.1 200 150 100 50 1.0 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE High Diode Semiconductor 100 Ta 125 150 (℃) 2 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 4