JMNIC BFR520T Npn 9 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR520T
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1999 Nov 02
2000 Apr 03
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
• Low noise figure
3
fpage
• High transition frequency
• Gold metallization ensures
excellent reliability
PINNING
• SOT416 (SC-75) package.
APPLICATIONS
PIN
DESCRIPTION
1
base
2
emitter
3
collector
1
2
Top view
MBK090
Marking code: N2.
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
−
15
V
IC
DC collector current
−
−
70
mA
Ptot
total power dissipation
up to Ts = 75 °C; note 1
−
−
150
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 °C
60
120
250
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power
gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
15
−
dB
F
noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
1.1
1.6
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
up to Ts = 75 °C; note 1
−
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 Apr 03
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
Rth j-s
VALUE
UNIT
500
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
50
nA
ICBO
collector cut-off current
IE = 0; VCE = 6 V
−
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.5
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
15
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
9
−
dB
s212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
13
14
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
17
−
dBm
ITO
third order intercept point
note 2
−
26
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
G UM
s 21
= 10 log ------------------------------------------------------- dB
2
2
( 1 – s 11 ) ( 1 – s 22 )
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.
2000 Apr 03
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
MGU068
200
MRC028
200
handbook, halfpage
Ptot
(mW)
h FE
150
150
100
100
50
50
0
0
50
100
150
0
10−2
200
Ts (°C)
10−1
1
102
10
I C (mA)
VCE = 6 V; Tj = 25 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MRC021
MRC022
12
handbook,0.7
halfpage
C re
(pF)
handbook,
halfpage
f
T
(GHz)
10
0.6
VCE = 8 V
0.5
8
3V
0.4
6
0.3
4
0.2
2
0.1
0
0
0
2
4
6
8
10
VCB (V)
1
10
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
2000 Apr 03
4
I C (mA)
100
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
MRC027
20
MRC026
25
gain
(dB)
handbook, halfpage
handbook, halfpage
G UM
(dB)
18
20
MSG
16
G max
G UM
15
VCE = 6 V
3V
14
10
12
5
10
0
0
10
20
I C (mA)
30
0
10
20
30
I C (mA)
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
Fig.6
Fig.7
Maximum unilateral power gain as a
function of collector current; typical values.
Gain as a function of collector current;
typical values.
MRC024
50
gain
(dB)
40
MRC025
50
handbook, halfpage
handbook, halfpage
gain
(dB)
G UM
40
30
G UM
MSG
30
MSG
20
20
G max
10
G max
10
0
10−2
10−1
1
f (GHz)
10
0
10−2
10−1
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
Fig.8
Fig.9
Gain as a function of frequency;
typical values.
2000 Apr 03
5
1
f (GHz)
Gain as a function of frequency;
typical values.
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
MRC029
MRC023
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
3
3
I C = 20 mA
f = 2 GHz
5 mA
2
2
900 MHz
500 MHz
1
1
0
1
10
I C (mA)
0
10−1
102
1
f (GHz)
10
VCE = 6 V; Tamb = 25 °C.
VCE = 6 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
2000 Apr 03
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
stability
circle
handbook, full pagewidth
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
0.2
0.4
5
Fmin = 1. 1 dB
0.2
ΓOPT
180°
0.2
0
0.5
1
2
5
0°
0
F = 1.5 dB
F = 2 dB
0.2
5
F = 3 dB
0.5
−135°
2
−45°
1
MRC077
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
1.0
−90°
Fig.12 Common emitter noise figure circles; typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
F = 3 dB
F = 2.5 dB
0.2
0.4
5
F = 2 dB
Fmin = 1. 9 dB
180°
0.2
0
ΓMS
Gmax = 9.1 dB
0.2
0.5
ΓOPT
1
0.2
2
5
G = 8,5 dB
G = 8 dB
0°
0
5
G = 7 dB
−135°
0.5
2
−45°
1
MRC078
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
−90°
Fig.13 Common emitter noise figure circles; typical values.
2000 Apr 03
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
180°
0.2
0
0.5
0.2
1
2
5
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRC066
1.0
−90°
IC = 20 mA; VCE = 6 V;
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRC067
IC = 20 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (s21); typical values.
2000 Apr 03
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC060
IC = 20 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
5
0.2
−135°
0.5
2
−45°
1
MRC061
IC = 20 mA; VCE = 6 V;
Zo = 50 Ω.
1.0
−90°
Fig.17 Common emitter output reflection coefficient (s22); typical values.
2000 Apr 03
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2000 Apr 03
REFERENCES
IEC
JEDEC
EIAJ
SC-75
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
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Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
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modification.
2000 Apr 03
11
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Printed in The Netherlands
603508/02/pp12
Date of release: 2000
Apr 03
Document order number:
9397 750 06719