APTGL180A120T3AG Phase leg Trench + Field Stop IGBT4 Power Module 29 30 31 32 VCES = 1200V IC = 180A @ Tc = 100°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 4 Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Very low stray inductance • Kelvin emitter for easy drive • Internal thermistor for temperature monitoring • High level of integration • AlN substrate for improved thermal performance 3 26 27 28 22 23 25 R1 8 7 16 28 27 26 25 18 19 20 14 20 19 18 23 22 29 16 30 15 31 14 Benefits • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant 13 32 2 3 4 7 8 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 230 180 300 ±20 940 Tj = 125°C 300A @ 1100V TC = 25°C TC = 100°C TC = 25°C Unit V March, 2011 Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGL180A120T3AG – Rev 2 Symbol VCES APTGL180A120T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 150°C VGE = VCE , IC = 5.5 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.8 2.2 5.8 Min Typ Max Unit 300 2.2 µA 6.5 200 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=150A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 150A RG = 3Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 150A RG = 3Ω VGE = ±15V TJ = 150°C VCE = 600V IC = 150A TJ = 150°C RG = 3Ω VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 9.3 0.58 0.5 nF 0.85 µC 130 20 300 ns 45 150 35 350 80 ns 13.5 mJ 14.5 mJ 600 A Reverse diode ratings and characteristics IRM IF Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 1200 IF = 240A IF = 120A IF = 120A VR = 800V di/dt =400A/µs 150 600 Tc = 100°C 120 Tj = 125°C 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C 350 1120 Tj = 125°C 5780 www.microsemi.com Unit V Tj = 25°C Tj = 125°C IF = 120A VF Typ µA A 3 March, 2011 VRRM Test Conditions Maximum Peak Repetitive Reverse Voltage V ns nC 2-5 APTGL180A120T3AG – Rev 2 Symbol Characteristic APTGL180A120T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2.5 Max 0.16 0.37 Unit °C/W V 175 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGL180A120T3AG – Rev 2 28 17 1 March, 2011 SP3 Package outline (dimensions in mm) APTGL180A120T3AG Typical Performance Curve Output Characteristics (VGE=15V) 300 Output Characteristics 300 250 VGE=19V TJ=25°C 200 200 TJ=150°C IC (A) IC (A) TJ = 150°C 250 150 150 100 100 50 50 0 VGE=15V VGE=9V 0 0 1 2 3 4 0 1 2 VCE (V) VCE (V) Transfert Characteristics 300 VCE = 600V VGE = 15V RG = 3.Ω TJ = 150°C 30 E (mJ) IC (A) 200 150 100 4 Energy losses vs Collector Current 40 TJ=25°C 250 3 Eon Eoff 20 10 TJ=150°C 50 0 0 5 6 7 8 9 10 11 12 0 13 50 100 Switching Energy Losses vs Gate Resistance 200 250 300 Reverse Bias Safe Operating Area 45 350 VCE = 600V VGE =15V IC = 150A TJ = 150°C 30 300 Eon 250 IC (A) 37.5 E (mJ) 150 IC (A) VGE (V) 22.5 Eoff 15 200 150 VGE=15V TJ=150°C RG=3Ω 100 7.5 50 0 0 0 5 10 15 Gate Resistance (ohms) 20 0 300 600 VCE (V) 900 1200 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 IGBT 0.9 0.12 0.1 0.08 0.06 0.04 0.02 March, 2011 0.14 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL180A120T3AG – Rev 2 Thermal Impedance (°C/W) 0.18 APTGL180A120T3AG Forward Characteristic of diode 300 VCE=600V D=50% RG=3 Ω TJ=150°C Tc=75°C ZVS 150 120 250 TJ=125°C 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 90 ZCS 60 30 150 100 Hard switching TJ=25°C 50 0 0 0 40 80 120 160 200 240 0 0.5 IC (A) 1 1.5 2 VF (V) 2.5 3 3.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.3 Diode 0.9 0.7 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 5-5 APTGL180A120T3AG – Rev 2 March, 2011 Rectangular Pulse Duration in Seconds