IXYS DSSK50-0025B Power schottky rectifier with common cathode Datasheet

DSSK 50-0025B
IFAV = 2x25 A
VRRM = 25 V
VF = 0.42 V
Power Schottky Rectifier
with common cathode
Preliminary Data
VRSM
VRRM
V
V
25
25
TO-247 AD
Type
A
DSSK 50-0025B
C
A
A
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAV
IFAV
TC = 125°C; rectangular, d = 0.5
TC = 125°C; rectangular, d = 0.5; per device
IFSM
50
25
50
A
A
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine
330
A
EAS
IAS = tbd A; L = 180 µH; TVJ = 25°C; non repetitive
tbd
mJ
IAR
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
tbd
A
tbd
V/ms
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
IR
VF

-55...+150
150
-55...+150
°C
°C
°C
90
W
0.8...1.2
6
g
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 100°C VR = VRRM
IF = 25 A;
IF = 25 A;
IF = 50 A;
Nm
12
80
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
RthJC
RthCH
0.25
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
mA
mA
0.42
0.51
0.63
V
V
V
1.4
K/W
K/W
IXYS reserves the right to change limits, Conditions and dimensions.
© 2000 IXYS All rights reserved
007
Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSSK 50-0025B
100
10000
1000
A
mA
TVJ=150°C
pF
IR 100 125°C
IF
CT
100°C
10
10
1000
75°C
1
TVJ =
150°C
125°C
25°C
50°C
0.1
25°C
TVJ= 25°C
1
0.0
100
0.01
0.2
0.6 V
0.4
0
5
10
15
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
35
W
30
60
A
50
IF(AV)
40
20
d=
DC
0.5
0.33
0.25
0.17
0.08
30
15
20
10
10
5
0
40
80
120 °C 160
0
10
20
30
IF(AV)
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
15
20 V 25
VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
1000
0
0
10
A
IFSM
25
DC
5
10000
P(AV)
d=0.5
0
20 V 25
VR
VF
100
10
40 A
100
1000 µs 10000
tP
Fig. 5 Forward power loss
characteristics
2
1
K/W
ZthJC
D=0.5
0.33
0.25
0.17
0.08
Single Pulse
0.1
0.01
0.0001
DSSK 50-0025B
0.001
0.01
0.1
s
1
10
t
Note: All curves are per diode
007
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2000 IXYS All rights reserved
2-2
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