JIEJIE ACJT225-10FP 2a triac Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
ACJT2 Series
2A TRIACs
Rev.4.0
DESCRIPTION:
2
ACJT2 series triacs with high ability to withstand the
shock loading of large current provide high dv/dt rate
with strong resistance to electromagnetic interference.
They are especially recommended for use on inductive
load and serious electromagnetic interference place.
ACJT2xx-xxF/ACJT2xx-xxFP provides insulation
voltage rated at 2000V RMS from all three terminals
to external heatsink.
12
3
TO-251
132
12
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
2
A
VDRM /VRRM
1000
V
3
1
12
3
3
TO-252
SOT-89
12
3
SOT-223
TO-92
TO-220F
Insulated
12
3
TO-220FP
Insulated
T2(2)
T1(1)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage( Tj =25℃)
VDRM
1000
V
Repetitive peak reverse voltage( Tj =25℃)
VRRM
1000
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
IT(RMS)
2
A
ITSM
20
A
I2t
2
A2s
Storage junction temperature range
Operating junction temperature range
TO-251/ TO-252/
SOT-223(TC=103℃)
RMS on-state
current
SOT-89 (TC=98℃)
TO-92 (TC=90℃)
TO-220F(Ins)/
TO-220FP(Ins)(TC=100℃)
Non repetitive surge peak on-state current
( full cycle, F=50Hz)
I2t value for fusing ( tp=10ms)
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ACJT2 Series
JieJie Microelectronics CO. , Ltd
Rate of rise of on-state current (IG =2×IGT)
dI/dt
50
A/μs
IGM
1
A
PG(AV)
0.1
W
PGM
1
W
Peak gate current
Average gate power dissipation
Peak gate power
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
VD=12V RL=33Ω
VD=VDRM Tj=125℃
RL=3.3KΩ
Quadrant
Unit
ACJT225
10
25
Ⅰ-Ⅱ-Ⅲ
MAX
Ⅰ-Ⅱ-Ⅲ
MAX
1.3
V
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
Ⅰ-Ⅲ
IL
IG=1.2IGT
IH
IT=100mA
VD=2/3VDRM Gate Open Tj=125℃
dV/dt
ACJT210
25
50
35
60
MAX
10
40
mA
MIN
600
1000
V/μs
MAX
Ⅱ
mA
mA
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=2.8A tp=380μs
VD=VDRM VR=VRRM
Value(MAX)
Unit
Tj=25℃
1.55
V
Tj=25℃
10
μA
Tj=125℃
1
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
junction to case(AC)
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TO-251/ TO-252
4.5
TO-92
11.2
SOT-223
5.8
SOT-89
8.9
TO-220F(Ins)/
TO-220FP(Ins)
7.5
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℃/W
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ACJT2 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
AC
J
T
2
10
-10
AC switch
U
V:SOT-223
F:TO-220F(Ins)
FP:TO-220FP(Ins)
U:TO-92 N:SOT-89
H:TO-251 K:TO-252
JieJie Microelectronics Co.,Ltd
Triacs
IT(RMS):2A
10: IGT1-3≤10mA
25: IGT1-3≤25mA
10:VDRM /VRRM≥1000V
PACKAGE MECHANICAL DATA
N
N
C
Dimensions
Ref.
Millimeters
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.45
5.20
0.175
0.205
B
4.32
5.33
0.170
0.210
C
3.18
4.19
0.125
0.165
D
0.407
0.533
0.016
0.021
H
F
V
Inches
E
0.60
0.80
0.024
0.031
E
F
-
1.1
-
-
0.043
-
G
-
1.27
-
-
0.050
-
H
-
2.30
-
-
0.091
-
J
0.36
0.50
0.014
0.020
K
12.70
15.0
0.500
0.591
N
2.04
2.66
0.080
0.105
P
1.86
2.06
0.073
0.081
V
-
4.3
-
0.169
m
.5
A
1
ax
M
K
P
B
Φ
m
D
J
G
TO-92
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ACJT2 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min.
E
A
B2
D
V1
H
V1
L2
C2
V1
L1
L
B3
C
B
A2
Max.
Min.
Typ.
Max.
2.20
2.40
0.086
0.095
A2
0.90
1.20
0.035
0.047
B
0.55
0.65
0.022
0.026
B2
5.10
5.40
0.200
0.213
B3
0.76
0.85
0.030
0.033
C
0.45
0.62
0.018
0.024
C2
0.48
0.62
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
2.30
0.264
0.091
H
16.0
17.0
0.630
0.669
L
8.90
9.40
0.350
0.370
L1
1.80
1.90
0.071
0.075
L2
1.37
1.50
0.054
0.059
4°
V1
TO-251
Inches
A
G
G
Typ.
4°
Dimensions
Ref.
Millimeters
A
C
0.6 M
IN
A2
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V2
D
V1
B
V1
G
V1
C2
L2
L1
H
B2
Min.
2.20
2.40
0.086
0.095
A2
0.03
0.23
0.001
0.009
Max.
B
0.55
0.65
0.022
0.026
B2
5.10
5.40
0.200
0.213
C
0.45
0.62
0.018
0.024
C2
0.48
0.62
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.70
0.252
0.264
G
4.40
4.70
0.173
0.185
H
9.35
10.6
0.368
0.417
L1
1.30
1.70
0.051
0.067
L2
1.37
1.50
0.054
0.059
4°
V1
TO-252
Typ.
Max.
A
Min.
E
Typ.
Inches
V2
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0°
4°
8°
0°
8°
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ACJT2 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
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ACJT2 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
m
5m
ax
E
Min.
A
M
C2
F
L3
Φ
3.
Millimeters
H
D
V1
L1
C3
L2
A
4.40
B
0.74
TO-220F Ins
4.80
0.173
0.83
0.029
Typ.
Max.
0.189
0.031
0.033
0.48
0.75
0.019
0.030
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
2.54
28.0
0.1
29.8
1.102
1.70
0.045
3.63
L1
L2
G
Min.
C
H
C
0.80
Max.
C2
G
B
Typ.
Inches
1.14
1.173
0.143
0.067
L3
3.30
0.130
V1
45°
45°
Dimensions
Ref.
Millimeters
Min.
E
ax
3.
A
C2
F
L3
Φ
M
m
5m
H
D
V1
L1
C3
L2
TO-220FP Ins
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4.90
0.177
0.83
0.029
Typ.
Max.
B
0.74
C
0.47
0.65
0.019
0.026
C2
2.45
2.75
0.096
0.108
C3
2.60
3.00
0.102
0.118
D
8.80
9.30
0.346
0.366
E
9.80
10.4
0.386
0.410
F
6.40
6.80
0.252
0.268
29.8
1.102
L2
0.80
2.54
G
C
Min.
4.50
28.0
0.031
1.173
0.045
0.067
L3
3.30
0.130
V1
45°
45°
- 6 / 7-
0.033
0.143
1.70
1.14
0.193
0.1
3.63
L1
G
Max.
A
H
B
Typ.
Inches
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ACJT2 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
P(w)
3
IT(RMS) (A)
3
2
2
α=180°
TO-251/TO-252/
SOT-223
SOT-89
1
TO-220F(Ins)/
TO-220FP(Ins)
1
TO-92
0
0
0.5
1
IT(RMS) (A)
1.5
2
Tc (℃)
0
0
2.5
FIG.3: Surge peak on-state current versus
number of cycles
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
4
t=20ms
One cycle
20
3
15
2
10
Tj=25℃
Tj=125℃
1
5
0
1
10
Number of cycles
100
0
0
1000
FIG.5: Relative variations of gate trigger current
versus junction temperature
1.5
2.0
VTM (V)
2.5
IH,IL(Tj) /IH,IL(Tj=25℃)
IGT(Tj) /IGT(Tj=25℃)
3.0
2.5
2.5
2.0
IGT3
1.5 IGT1&IGT2
1.5
1.0
1.0
IH
IL
0.5
0.5
0.0
1.0
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
3.0
2.0
0.5
Tj (℃)
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120
140
Information furnished in this document is believed to be accurate and reliable. However,
Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences
of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the fourth version which is made in 10-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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