AP4880GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Fast Switching D D D ▼ Simple Drive Requirement S S 25V RDS(ON) 8.5mΩ ID G SO-8 BVDSS 13A S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G S S The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ 3 Continuous Drain Current 3 Continuous Drain Current 1 Rating Units 25 V ± 20 13 V A 10 A IDM Pulsed Drain Current 50 A PD@TA=25℃ Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient3 Data and specifications subject to change without notice Max. Value Unit 50 ℃/W AP4880GM o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 25 - - V - 0.037 - V/℃ VGS=10V, ID=13A - - 8.5 mΩ VGS=4.5V, ID=10A - - 15 mΩ VDS=VGS, ID=250uA 1 - 3 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) 2 Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS VGS=0V, ID=250uA Max. Units VDS=15V, ID=10A - 20 - S o VDS=25V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=20V, VGS=0V - - 25 uA Gate-Source Leakage VGS= ± 20V - - Drain-Source Leakage Current (Tj=25 C) nA Qg Total Gate Charge ID=13A - ±100 22.5 - Qgs Gate-Source Charge VDS=15V - 3.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 15.4 - nC VDS=15V - 9 - ns 2 2 nC td(on) Turn-on Delay Time tr Rise Time ID=1A - 16 - ns td(off) Turn-off Delay Time RG=6.2Ω,VGS=10V - 25 - ns tf Fall Time RD=15Ω - 50 - ns Ciss Input Capacitance VGS=0V - 813 - pF Coss Output Capacitance VDS=25V - 516 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 224 - pF Min. Typ. VD=VG=0V , VS=1.3V - - 1.92 A Tj=25℃, IS=2.3A, VGS=0V - - 1.3 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad. AP4880GM 50 V GS =4.0V 30 10V 8.0V 6.0V 5.0V 40 20 ID , Drain Current (A) 40 ID , Drain Current (A) 50 10V 8.0V 6.0V 5.0V 10 V GS =4.0V 30 20 10 o T C =150 o C T C =25 C 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 23 I D =13A T C =25 ℃ 21 I D =13A 1.6 V GS =10V Normalized R DS(ON) 19 RDS(ON) (mΩ ) 17 15 13 11 1.4 1.2 1 9 0.8 7 0.6 5 -50 2 3 4 5 6 7 8 9 10 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 0 50 100 11 o T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP4880GM 15 3 2 9 PD (W) ID , Drain Current (A) 12 6 1 3 0 0 25 50 75 100 125 150 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 100 100us Normalized Thermal Response (R thja) Duty Factor = 0.5 10 ID (A) 1ms 10ms 1 100ms 1s 0.1 10s T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W DC 0.01 0.001 0.1 1 10 V DS (V) Fig 7. Maximum Safe Operating Area 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP4880GM f=1.0MHz 10000 16 I D =13A V DS =15V 12 10 C (pF) VGS , Gate to Source Voltage (V) 14 8 1000 Ciss 6 Coss 4 Crss 2 0 0 5 10 15 20 25 30 35 40 45 50 100 1 6 11 16 21 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 T j =150 o C VGS(th) (V) IS(A) 2 T j =25 o C 1 1 0.1 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 o T j , Junction Temperature( C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP4880GM VDS 90% RD VDS D RG TO THE OSCILLOSCOPE 0.6 x RATED VDS G + 10% VGS S 10 V VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 5V 0.6 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q