TI BQ4850Y Rtc module with 512kx8 nvsram Datasheet

Not Recommended For New Designs
bq4850Y
RTC Module With 512Kx8 NVSRAM
Features
General Description
➤ Integrated SRAM, real-time
clock, crystal, power-fail control
circuit, and battery
The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
an integral accessible real-time
clock.
➤ Real-Time Clock counts seconds
through years in BCD format
➤ RAM-like clock access
➤ Pin-compatible with industrystandard 512K x 8 SRAMs
➤ Unlimited write cycles
➤ 10-year minimum data retention
and clock operation in the absence
of power
➤ Automatic power-fail chip deselect and write-protection
➤ Software clock calibration for
grea t e r t han ± 1 m inut e pe r
month accuracy
The device combines an internal lithium battery, quartz crystal, clock and
power-fail chip, and a full CMOS
SRAM in a plastic 32-pin DIP module. The RTC Module directly replaces industry-standard SRAMs and
also fits into many EPROM and EEPROM sockets without any requirement for special write timing or limitations on the number of write cycles.
Registers for the real-time clock,
alarm and other special functions
are located in registers 7FFF8h–
7FFFFh of the memory array.
Pin Connections
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
The clock and alarm registers are
dual-port read/write SRAM locations that are updated once per second by a clock control circuit from
the internal clock counters. The
dual-port registers allow clock updates to occur without interrupting
normal access to the rest of the
SRAM array.
The bq4850Y also contains a powerfail-detect circuit. The circuit deselects the device whenever VCC falls
below tolerance, providing a high degree of data security. The battery is
electrically isolated when shipped
from the factory to provide maximum battery capacity. The battery
remains disconnected until the first
application of VCC.
Pin Names
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
32-Pin DIP Module
PN485001.eps
SLUS057A- January 2005
1
A0–A18
Address input
CE
Chip enable
WE
Write enable
OE
Output enable
DQ0–DQ7
Data in/data out
VCC
+5 volts
VSS
Ground
Not Recommended For New Designs
bq4850Y
including memory and clock interface, and dataretention modes.
Functional Description
Figure 1 is a block diagram of the bq4850Y. The following sections describe the bq4850Y functional operation,
TimeBase
Oscillator
Internal
Quartz
Crystal
7
AD 0-AD 18
.
-. 64
4
3
CE
OE
DQ0 -DQ
.
-. 8
.
-. 64
16 : 1 MUX
Control/Status
Registers
P
Bus
I/F
Clock Alarm and
Calendar Bytes
Clock/Calendar
Update
User Buffer
(8 Bytes)
WE
Storage
Registers
(524,288 Bytes)
VCC
Internal
Battery
PowerFail
Control
WriteProtect
BD-961
Figure 1. Block Diagram
Truth Table
VCC
CE
OE
WE
Mode
DQ
Power
< VCC (max.)
VIH
X
X
Deselect
High Z
Standby
VIL
X
VIL
Write
DIN
Active
VIL
VIL
VIH
Read
DOUT
Active
VIL
VIH
VIH
Read
High Z
Active
< VPFD (min.) > VSO
X
X
X
Deselect
High Z
CMOS standby
≤ VSO
X
X
X
Deselect
High Z
Battery-backup mode
> VCC (min.)
SLUS057A- January 2005
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Not Recommended For New Designs
bq4850Y
Figure 2 illustrates the address map for the bq4850Y.
Table 1 is a map of the bq4850Y registers.
Address Map
The bq4850Y provides 8 bytes of clock and control status
registers and 524,288 bytes of storage RAM.
8 Bytes
32,760
Bytes
Clock and
7FFFF
Control Status
Registers
7FFF8
0
Year
7FFFF
1
Month
7FFFE
7FFF7
2
Date
7FFFD
3
Days
7FFFC
4
Hours
7FFFB
5
Minutes
7FFFA
6
Seconds
7FFF9
7
Control
7FFF8
Storage
RAM
0000
MM-961
Figure 2. Address Map
Table 1. bq4850Y Clock and Control Register Map
Address
D7
D6
7FFFF
D5
D4
D3
D2
10 Years
Range (h)
Register
Year
00–99
Year
Month
01–12
Month
Date
01–31
Date
01–07
Days
Hours
00–23
Hours
X
X
7FFFD
X
X
7FFFC
X
FTE
7FFFB
X
X
7FFFA
X
10 Minutes
Minutes
00–59
Minutes
7FFF9
OSC
10 Seconds
Seconds
00–59
Seconds
7FFF8
W
00–31
Control
Notes:
10 Month
D0
7FFFE
R
X
D1
10 Date
X
X
X
Day
10 Hours
S
Calibration
X = Unused bits; can be written and read.
Clock/Calendar data in 24-hour BCD format.
OSC = 1 stops the clock oscillator.
SLUS057A- January 2005
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Not Recommended For New Designs
bq4850Y
The internal coin cell maintains data in the bq4850Y after the initial application of VCC for an accumulated period of at least 10 years when VCC is less than VSO. As
system power returns and Vcc rises above VSO, the battery is disconnected, and the power supply is switched to
external VCC. Write-protection continues for tCER after
VCC reaches VPFD to allow for processor stabilization.
After tCER, normal RAM operation can resume.
Memory Interface
Read Mode
The bq4850Y is in read mode whenever OE (output enable) is low and CE (chip enable) is low. The device architecture allows ripple-through access of data from
eight of 4,194,304 locations in the static storage array.
Thus, the unique address specified by the 19 address inputs defines which one of the 524,288 bytes of data is to
be accessed. Valid data is available at the data I/O pins
within tAA (address access time) after the last address
input signal is stable, providing that the CE and OE
(output enable) access times are also satisfied. If the CE
and OE access times are not met, valid data is available
after the latter of chip enable access time (tACE) or output enable access time (tOE).
Clock Interface
Reading the Clock
The interface to the clock and control registers of the
bq4850Y is the same as that for the general-purpose
storage memory. Once every second, the user-accessible
clock/calendar locations are updated simultaneously
from the internal real time counters. To prevent reading
data in transition, updates to the bq4850Y clock registers should be halted. Updating is halted by setting the
read bit D6 of the control register to 1. As long as the
read bit is 1, updates to user-accessible clock locations
are inhibited. Once the frozen clock information is retrieved by reading the appropriate clock memory locations, the read bit should be reset to 0 in order to allow
updates to occur from the internal counters. Because the
internal counters are not halted by setting the read bit,
reading the clock locations has no effect on clock accuracy. Once the read bit is reset to 0, within one second
the internal registers update the user-accessible registers with the correct time. A halt command issued during a clock update allows the update to occur before
freezing the data.
CE and OE control the state of the eight three-state
data I/O signals. If the outputs are activated before tAA,
the data lines are driven to an indeterminate state until
tAA. If the address inputs are changed while CE and OE
remain low, output data remains valid for tOH (output
data hold time), but goes indeterminate until the next
address access.
Write Mode
The bq4850Y is in write mode whenever WE and CE are
active. The start of a write is referenced from the
latter-occurring falling edge of WE or CE. A write is terminated by the earlier rising edge of WE or CE. The addresses must be held valid throughout the cycle. CE or
WE must return high for a minimum of tWR2 from CE or
tWR1 from WE prior to the initiation of another read or
write cycle.
Setting the Clock
Bit D7 of the control register is the write bit. Like the
read bit, the write bit when set to a 1 halts updates to
the clock/calendar memory locations. Once frozen, the
locations can be written with the desired information in
24-hour BCD format. Resetting the write bit to 0 causes
the written values to be transferred to the internal clock
counters and allows updates to the user-accessible registers to resume within one second. Use the write bit, D7,
only when updating the time registers (7FFFF–7FFF9).
Data-in must be valid tDW prior to the end of write and
remain valid for tDH1 or tDH2 afterward. OE should be
kept high during write cycles to avoid bus contention; although, if the output bus has been activated by a low on
CE and OE, a low on WE disables the outputs tWZ after
WE falls.
Data-Retention Mode
With valid V CC applied, the bq4850Y operates as a
conventional static RAM. Should the supply voltage
decay, the RAM automatically power-fail deselects,
write-protecting itself tWPT after VCC falls below VPFD.
All outputs become high impedance, and all inputs are
treated as “don’t care.”
Stopping and Starting the Clock Oscillator
The OSC bit in the seconds register turns the clock on or
off. If the bq4850Y is to spend a significant period of
time in storage, the clock oscillator can be turned off to
preserve battery capacity. OSC set to 1 stops the clock
oscillator. When OSC is reset to 0, the clock oscillator is
turned on and clock updates to user-accessible memory
locations occur within one second.
If power-fail detection occurs during a valid access, the
memory cycle continues to completion. If the memory
cycle fails to terminate within time t WPT, writeprotection takes place. When VCC drops below VSO, the
control circuit switches power to the internal energy
source, which preserves data.
The OSC bit is set to 1 when shipped from the Benchmarq factory.
SLUS057A- January 2005
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Not Recommended For New Designs
bq4850Y
Calibrating the Clock
0
The bq4850Y real-time clock is driven by a quartz controlled oscillator with a nominal frequency of 32,768 Hz.
The quartz crystal is contained within the bq4850Y
package along with the battery. The clock accuracy of
the bq4850Y module is tested to be within 20ppm or
about 1 minute per month at 25°C. The oscillation rates
of crystals change with temperature as Figure 3 shows.
To compensate for the frequency shift, the bq4850Y offers onboard software clock calibration. The user can
adjust the calibration based on the typical operating
temperature of individual applications.
Frequency Error
-20
-40
-60
-80
-100
-120
-30 -20 -10 0 10 20 30 40 50 60 70
The software calibration bits are located in the control
register. Bits D0–D4 control the magnitude of correction, and bit D5 the direction (positive or negative) of
correction. Assuming that the oscillator is running at
exactly 32,786 Hz, each calibration step of D0–D4 adjusts the clock rate by +4.068 ppm (+10.7 seconds per
month) or -2.034 ppm (-5.35 seconds per month) depending on the value of the sign bit D5. When the sign bit is
1, positive adjustment occurs; a 0 activates negative adjustment. The total range of clock calibration is +5.5 or
-2.75 minutes per month.
Temperature ( C)
GR485001
Figure 3. Frequency Error
ister is set to a 1, and the oscillator is running at exactly
32,768 Hz, the LSB of the seconds register toggles at
512 Hz. Any deviation from 512 Hz indicates the degree
and direction of oscillator frequency shift at the test
temperature. For example, a reading of 512.01024 Hz
indicates a (1E6∗0.01024)/512 or +20 ppm oscillator frequency error, requiring ten steps of negative calibration
(10∗-2.034 or -20.34) or 001010 to be loaded into the calibration byte for correction. To read the test frequency,
the bq4850Y must be selected and held in an extended
read of the seconds register, location 7FFF9, without
having the read bit set. The frequency appears on DQ0.
The FTE bit must be set using the write bit control. The
FTE bit must be reset to 0 for normal clock operation to
resume.
Two methods can be used to ascertain how much calibration a given bq4850Y may require in a system. The
first involves simply setting the clock, letting it run for a
month, and then comparing the time to an accurate
known reference like WWV radio broadcasts. Based on
the variation to the standard, the end user can adjust
the clock to match the system’s environment even after
the product is packaged in a non-serviceable enclosure.
The only requirement is a utility that allows the end
user to access the calibration bits in the control register.
The second approach uses a bq4850Y test mode. When
the frequency test mode enable bit FTE in the days reg-
SLUS057A- January 2005
5
Not Recommended For New Designs
Not Recommended For New Designs
bq4850Y
DC Electrical Characteristics (TA = TOPR, VCCmin
Symbol
Parameter
≤ VCC ≤ VCCmax)
Minimum
Typical
Maximum
Unit
Conditions/Notes
ILI
Input leakage current
-
-
±1
µA
VIN = VSS to VCC
ILO
Output leakage current
-
-
±1
µA
CE = VIH or OE = VIH or
WE = VIL
VOH
Output high voltage
2.4
-
-
V
IOH = -1.0 mA
VOL
Output low voltage
-
-
0.4
V
IOL = 2.1 mA
ISB1
Standby supply current
-
3
5
mA
CE = VIH
ISB2
Standby supply current
-
0.1
1
mA
CE ≥ VCC - 0.2V,
0V ≤ VIN ≤ 0.2V,
or VIN ≥ VCC - 0.2V
ICC
Operating supply current
-
-
90
mA
Min. cycle, duty = 100%,
CE = VIL, II/O = 0mA
VPFD
Power-fail-detect voltage
4.30
4.37
4.50
V
VSO
Supply switch-over voltage
-
3
-
V
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V.
Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
CI/O
Input/output capacitance
-
-
10
pF
Output voltage = 0V
CIN
Input capacitance
-
-
10
pF
Input voltage = 0V
Note:
These parameters are sampled and not 100% tested.
SLUS057A- January 2005
7
Conditions
Not Recommended For New Designs
bq4850Y
AC Test Conditions
Parameter
Test Conditions
Input pulse levels
0V to 3.0V
Input rise and fall times
5 ns
Input and output timing reference levels
1.5 V (unless otherwise specified)
Output load (including scope and jig)
See Figures 4 and 5
Figure 4. Output Load A
Read Cycle
Figure 5. Output Load B
(TA = TOPR, VCCmin ≤ VCC ≤ VCCMAX)
–85
Symbol
Parameter
Min.
Max.
Unit
85
-
ns
Conditions
tRC
Read cycle time
tAA
Address access time
-
85
ns
Output load A
tACE
Chip enable access time
-
85
ns
Output load A
tOE
Output enable to output valid
-
45
ns
Output load A
tCLZ
Chip enable to output in low Z
5
-
ns
Output load B
tOLZ
Output enable to output in low Z
0
-
ns
Output load B
tCHZ
Chip disable to output in high Z
0
35
ns
Output load B
tOHZ
Output disable to output in high Z
0
25
ns
Output load B
tOH
Output hold from address change
10
-
ns
Output load A
SLUS057A- January 2005
8
Not Recommended For New Designs
bq4850Y
Read Cycle No. 1 (Address Access) 1,2
Read Cycle No. 2 (CE Access) 1,3,4
Read Cycle No. 3 (OE Access) 1,5
Notes:
1. WE is held high for a read cycle.
2. Device is continuously selected: CE = OE = VIL.
3. Address is valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Device is continuously selected: CE = VIL.
SLUS057A- January 2005
9
Not Recommended For New Designs
bq4850Y
Write Cycle
(TA =TOPR , VCCMIN ≤ VCC ≤ VCCMAX)
–85
Symbol
Parameter
Min.
Max.
Units
Conditions/Notes
tWC
Write cycle time
85
-
ns
tCW
Chip enable to end of write
75
-
ns
(1)
tAW
Address valid to end of write
75
-
ns
(1)
tAS
Address setup time
0
-
ns
Measured from address valid to beginning of write. (2)
tWP
Write pulse width
65
-
ns
Measured from beginning of write to
end of write. (1)
tWR1
Write recovery time (write cycle 1)
5
-
ns
Measured from WE going high to end
of write cycle. (3)
tWR2
Write recovery time (write cycle 2)
15
-
ns
Measured from CE going high to end of
write cycle. (3)
tDW
Data valid to end of write
35
-
ns
Measured to first low-to-high transition of either CE or WE.
tDH1
Data hold time (write cycle 1)
0
-
ns
Measured from WE going high to end
of write cycle. (4)
tDH2
Data hold time (write cycle 2)
10
-
ns
Measured from CE going high to end of
write cycle. (4)
tWZ
Write enabled to output in high Z
0
30
ns
I/O pins are in output state. (5)
tOW
Output active from end of write
0
-
ns
I/O pins are in output state. (5)
Notes:
1. A write ends at the earlier transition of CE going high and WE going high.
2. A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition
of CE going low and WE going low.
3. Either tWR1 or tWR2 must be met.
4. Either tDH1 or tDH2 must be met.
5. If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in
high-impedance state.
SLUS057A- January 2005
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Not Recommended For New Designs
bq4850Y
Write Cycle No. 1 (WE-Controlled) 1,2,3
Write Cycle No. 2 (CE-Controlled) 1,2,3,4,5
Notes:
1. CE or WE must be high during address transition.
2. Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the
outputs must not be applied.
3. If OE is high, the I/O pins remain in a state of high impedance.
4. Either tWR1 or tWR2 must be met.
5. Either tDH1 or tDH2 must be met.
SLUS057A- January 2005
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Not Recommended For New Designs
bq4850Y
Power-Down/Power-Up Cycle (TA = TOPR)
Symbol
Minimum
Typical
Maximum
Unit
tPF
VCC slew, 4.50 to 4.20 V
300
-
-
µs
tFS
VCC slew, 4.20 to VSO
10
-
-
µs
tPU
VCC slew, VSO to VPFD
(max.)
0
-
-
µs
tCER
Chip enable recovery time
40
100
200
ms
tDR
Data-retention time in
absence of VCC
10
-
-
years
tWPT
Write-protect time
40
100
160
µs
Notes:
Parameter
Conditions
Time during which SRAM is
write-protected after VCC
passes VFPD on power-up.
TA = 25°C. (2)
Delay after VCC slews down
past VPFD before SRAM is
write-protected.
1. Typical values indicate operation at TA = 25°C, VCC = 5V.
2. Battery is disconnected from circuit until after VCC is applied for the first time. tDR is the
accumulated time in absence of power beginning when power is first applied to the device.
Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode
may affect data integrity.
Power-Down/Power-Up Timing
-
12
Not Recommended For New Designs
PACKAGE OPTION ADDENDUM
www.ti.com
6-Jun-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
BQ4850YMA-85
LIFEBUY DIP MODULE
MA
32
12
Pb-Free
(RoHS)
Call TI
N / A for Pkg Type
0 to 70
BQ4850YMA-85N
LIFEBUY DIP MODULE
MB
32
12
Pb-Free
(RoHS)
Call TI
N / A for Pkg Type
-40 to 85
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
MECHANICAL DATA
MPDI061 – MAY 2001
MA (R-PDIP-T**)
PLASTIC DUAL-IN-LINE
28 PINS SHOWN
Millimeters
Inches
D
Dimension
Min.
Max.
Min.
Max.
A
0.365
0.375
9.27
A1
0.015
–
0.38
9.53
–
B
0.017
0.023
0.43
0.58
C
0.008
0.013
0.20
0.33
D/12 PIN
0.710
0.740
18.03
18.80
D/28 PIN
1.470
1.500
37.34
38.10
D/32 PIN
1.670
1.700
42.42
43.18
D/40 PIN
2.070
2.100
52.58
53.34
E
0.710
0.740
18.03
18.80
e
G
0.590
0.630
14.99
16.00
0.090
0.110
2.29
2.79
L
0.120
0.150
3.05
3.81
S/12 PIN
0.105
0.130
2.67
3.30
S
0.075
0.110
1.91
2.79
E
A
L
A1
C
B
e
S
G
4201975/A 03/01
NOTES: A. All linear dimensions are in inches (mm).
B. This drawing is subject to change without notice.
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
•
1
MECHANICAL DATA
MPDI062 – MAY 2001
MB (R-PDIP-T32)
PLASTIC DUAL-IN-LINE
Millimeters
Inches
Dimension
Min.
Max.
Min.
Max.
A
0.365
0.375
9.27
A1
0.015
–
0.38
9.53
–
B
0.017
0.023
0.43
0.58
C
0.008
0.013
0.20
0.33
D
2.070
2.100
52.58
53.34
E
0.710
0.740
18.03
18.80
e
G
0.590
0.630
14.99
16.00
0.090
0.110
2.29
2.79
L
0.120
0.150
3.05
3.81
S
0.275
0.310
6.99
7.87
D
E
A
L
A1
C
B
e
S
G
4201976/A 03/01
NOTES: A. All linear dimensions are in inches (mm).
B. This drawing is subject to change without notice.
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
•
1
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
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Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
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dsp.ti.com
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www.ti.com/energy
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Logic
logic.ti.com
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www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
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RFID
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www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
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