MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632(FDB3632) TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 Low Miller Charge 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current-Continuous TC 111 ID TA=25 Power dissipation PD 80 A 12 A 310 W 2.07 Derate above 25 Unit W/ Thermal Resistance Junction to Ambient RèJA 43 /W Thermal Resistance, Junction-to-Case RèJC 0.48 /W Channel temperature Tch 175 Storage temperature Tstg -55 to +175 www.kexin.com.cn 1 MOSFET SMD Type KDB3632(FDB3632) Electrical Characteristics Ta = 25 Parameter Symbol Drain to source breakdown voltage VDSS Drain cut-off current IDSS Testconditons ID=250ìA VGS=0V Min Typ Gate threshold voltage Drain to source on-state resistance VGS(th) RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=80V,VGS=0 VGS= 20V VDS = VGS, ID = 250ìA 1 A 250 A 100 2.0 4.0 VGS=10V,ID=80A 0.0075 0.009 VGS=6V,ID=40A 0.009 0.015 VGS=10V,ID=80A,TC=175 0.018 0.022 VDS=25V,VGS=0,f=1MHZ nA V Ù 6000 pF 820 pF 200 pF Total Gate Charge at 10V Qg(TOT) VGS = 0V to 10V 84 110 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V 11 14 nC Gate to Source Gate Charge Qgs Gate Charge Threshold to Plateau Qgs2 Gate to Drain "Miller" Charge Qgd Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time nC 20 nC 20 nC 102 ns 30 ns 39 ns 96 ns td(OFF) VDD = 50 V, ID = 80A, VGS = 10 V, RGEN = 3.6 46 tf Source to Drain Diode Voltage VSD www.kexin.com.cn 30 tr tOFF Reverse Recovery Time VDS = 50 V, ID = 80A,Ig=1.0mA td(ON) Turn-Off Time Reverse Recovered Charge 2 IGSS Unit V VDS=80V,VGS=0,TC=150 Gate leakage current Max 100 ns 213 ns ISD=80A 1.25 V ISD=40A 1.0 V trr ISD = 75A, dISD/dt =100A/ìs 64 ns QRR ISD = 75A, dISD/dt =100A/ìs 120 nC