Kexin FDB3632 N-channel powertrench mosfet Datasheet

MOSFET
SMD Type
N-Channel PowerTrench MOSFET
KDB3632(FDB3632)
TO-263
Features
(Typ.), VGS = 10V, ID = 80A
+0.1
1.27-0.1
rDS(ON) = 7.5m
Qg(tot) = 84nC (Typ.), VGS = 10V
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
5.60
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
UIS Capability (Single Pulse and Repetitive Pulse)
+0.2
2.54-0.2
+0.2
15.25-0.2
Low QRR Body Diode
+0.1
0.81-0.1
2.54
5.08
+0.2
2.54-0.2
+0.2
8.7-0.2
Low Miller Charge
1 Gate
0.4
+0.1
-0.1
+0.2
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
20
V
Drain current-Continuous
TC 111
ID
TA=25
Power dissipation
PD
80
A
12
A
310
W
2.07
Derate above 25
Unit
W/
Thermal Resistance Junction to Ambient
RèJA
43
/W
Thermal Resistance, Junction-to-Case
RèJC
0.48
/W
Channel temperature
Tch
175
Storage temperature
Tstg
-55 to +175
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1
MOSFET
SMD Type
KDB3632(FDB3632)
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain to source breakdown voltage
VDSS
Drain cut-off current
IDSS
Testconditons
ID=250ìA
VGS=0V
Min
Typ
Gate threshold voltage
Drain to source on-state resistance
VGS(th)
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS=80V,VGS=0
VGS= 20V
VDS = VGS, ID = 250ìA
1
A
250
A
100
2.0
4.0
VGS=10V,ID=80A
0.0075 0.009
VGS=6V,ID=40A
0.009 0.015
VGS=10V,ID=80A,TC=175
0.018 0.022
VDS=25V,VGS=0,f=1MHZ
nA
V
Ù
6000
pF
820
pF
200
pF
Total Gate Charge at 10V
Qg(TOT)
VGS = 0V to 10V
84
110
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
11
14
nC
Gate to Source Gate Charge
Qgs
Gate Charge Threshold to Plateau
Qgs2
Gate to Drain "Miller" Charge
Qgd
Turn-On Time
tON
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nC
20
nC
20
nC
102
ns
30
ns
39
ns
96
ns
td(OFF)
VDD = 50 V, ID = 80A,
VGS = 10 V, RGEN = 3.6
46
tf
Source to Drain Diode Voltage
VSD
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30
tr
tOFF
Reverse Recovery Time
VDS = 50 V, ID = 80A,Ig=1.0mA
td(ON)
Turn-Off Time
Reverse Recovered Charge
2
IGSS
Unit
V
VDS=80V,VGS=0,TC=150
Gate leakage current
Max
100
ns
213
ns
ISD=80A
1.25
V
ISD=40A
1.0
V
trr
ISD = 75A, dISD/dt =100A/ìs
64
ns
QRR
ISD = 75A, dISD/dt =100A/ìs
120
nC
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