AS4C128M8D2
128M x 8 bit DDRII Synchronous DRAM (SDRAM)
Confidential
Advanced (Rev. 1.0, Jun. /2013)
Features
Overview
JEDEC Standard Compliant
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Power supplies: VDD & VDDQ = +1.8V 0.1V
Operating temperature range
- Commercial (0 ~ 85°C)
- Industrial (-40 ~ 95°C)
Fully synchronous operation
Fast clock rate: 400 MHz
Differential Clock, CK & CK#
Bidirectional single/differential data strobe
8 internal banks for concurrent operation
4-bit prefetch architecture
Internal pipeline architecture
Precharge & active power down
Programmable Mode & Extended Mode registers
Posted CAS# additive latency (AL): 0, 1, 2, 3, 4, 5, 6
WRITE latency = READ latency - 1 tCK
Burst lengths: 4 or 8
Burst type: Sequential / Interleave
DLL enable/disable
On-die termination (ODT)
RoHS compliant
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
- Average refresh period
The DDR2 SDRAM is a high-speed CMOS Double-DataRate-Two (DDR2), synchronous dynamic random - access
memory (SDRAM) containing 1024 Mbits in a 8-bit wide
data I/Os. It is internally configured as a 8-bank DRAM, 8
banks x 16Mb addresses x 8 I/Os.
The device is designed to comply with DDR2 DRAM key
features such as posted CAS# with additive latency, Write
latency = Read latency -1 and On Die Termination(ODT).
All of the control and address inputs are synchronized
with a pair of externally supplied differential clocks. Inputs
are latched at the cross point of differential clocks (CK rising
and CK# falling)
All I/Os are synchronized with a pair of bidirectional strobes
(DQS and DQS#) in a source synchronous fashion. The
address bus is used to convey row, column, and bank
address information in RAS #, CAS# multiplexing style.
Accesses begin with the registration of a Bank Activate
command, and then it is followed by a Read or Write
command. Read and write accesses to the DDR2 SDRAM are
4 or 8-bit burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence.
Operating the eight memory banks in an interleaved fashion
allows random access operation to occur at a higher rate
than is possible with standard DRAMs. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst sequence.
A sequential and gapless data rate is possible depending on
burst length, CAS latency, and speed grade of the device.
7.8µs @ 0℃ ≦TC≦ +85℃
3.9µs @ +85℃ ＜TC≦ +95℃
60-ball 8 x 10 x 1.2mm (max) FBGA package
- Pb and Halogen Free
Table 1. Ordering Information
Part Number
Clock Frequency
Data Rate
AS4C128M8D2-25BCN
400MHz
800Mbps/pin
AS4C128M8D2-25BIN
400MHz
800Mbps/pin
B: indicates 60-ball 8 x 10 x 1.2mm (max) FBGA package
C: indicates commercial temperature
I: indicates industrial temperature
N: indicates Pb and Halogen Free ROHS
Power Supply
VDD 1.8V, VDDQ 1.8V
VDD 1.8V, VDDQ 1.8V
Package
FBGA
FBGA
Table 2. Speed Grade Information
Speed Grade
DDR2-800
Clock Frequency
CAS Latency
400 MHz
5
tRCD (ns)
12.5
tRP (ns)
12.5
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
1
Rev. 1.0
June 2013
AS4C128M8D2
Figure 1. Ball Assignment (FBGA Top View)
1
2
3
A
VDD
RDQS#
B
DQ6
C
…
7
8
9
VSS
VSSQ
DQS#
VDDQ
VSSQ
DM/
RDQS
DQS
VSSQ
DQ7
VDDQ
DQ1
VDDQ
VDDQ
DQ0
VDDQ
D
DQ4
VSSQ
DQ3
DQ2
VSSQ
DQ5
E
VDDL
VREF
VSS
VSSDL
CK
VDD
CKE
WE#
RAS#
CK#
ODT
BA0
BA1
CAS#
CS#
A10
A1
A2
A0
A3
A5
A6
A4
A7
A9
A11
A8
A12
NC
NC
A13
F
G
BA2
H
J
VSS
K
L
VDD
VDD
VSS
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Figure 2. Block Diagram
DLL
CLOCK
BUFFER
Row
Decoder
CK
CK#
Column Decoder
CONTROL
SIGNAL
GENERATOR
16M x 8
CELL ARRAY
(BANK #1)
Column Decoder
Row
Decoder
COMMAND
DECODER
Row
Decoder
CKE
CS#
RAS#
CAS#
WE#
16M x 8
CELL ARRAY
(BANK #0)
16M x 8
CELL ARRAY
(BANK #2)
A10/AP
COLUMN
COUNTER
MODE
REGISTER
Row
Decoder
Column Decoder
16M x 8
CELL ARRAY
(BANK #3)
Column Decoder
ADDRESS
BUFFER
Row
Decoder
A0~A9
A11~A13
BA0~BA2
16M x 8
CELL ARRAY
(BANK #4)
Row
Decoder
Column Decoder
REFRESH
COUNTER
16M x 8
CELL ARRAY
(BANK #5)
DQS
DQS#
RDQS
RDQS#
DATA
STROBE
BUFFER
DQ
Buffer
Row
Decoder
Column Decoder
16M x 8
CELL ARRAY
(BANK #6)
Column Decoder
DQ0
Row
Decoder
~
DQ7
ODT DM
16M x 8
CELL ARRAY
(BANK #7)
Column Decoder
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
June 2013
AS4C128M8D2
Figure 3. State Diagram
CKEL
OCD
calibration
Initialization
Sequence
SR F H
C KE
PR
Setting
MR,
EMR(1)
EMR(2)
EMR(3)
(E)MRS
Idle
All banks
precharged
REF
CK
ACT
Self
Refreshing
CK
Refreshing
EL
CK
EH
EL
Precharge
Power
Down
Automatic Sequence
Cammand Sequence
Activating
Active
Power
Down
WR
C KE
CKEL
L
C KEH
C KE
L
WR
Bank
Active
RD
W
RA
CKEL
Writing
RD
Reading
WR
RD
RD
CKEL = CKE LOW, enter Power Down
A
RDA
A
WR
WRA
Writing
With
Autoprecharge
PR, PRA
PR, PRA
CKEH = CKE HIGH, exit Power Down,exit Self Refresh
ACT = Activate
RDA
PR, PRA
Reading
With
Autoprecharge
WR(A) = Write (with Autoprecharge)
RD(A) = Read (with Autoprecharge)
PR(A) = Precharge (All)
(E)MRS = (Extended) Mode Register Set
SRF = Enter Self Refresh
Precharging
REF = Refresh
Note: Use caution with this diagram. It is indented to provide a floorplan of the possible state transitions and the
commands to control them, not all details. In particular situations involving more than one bank,
enabling/disabling on-die termination, Power Down entry/exit, timing restrictions during state transitions, among
other things, are not captured in full detail.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
June 2013
AS4C128M8D2
Ball Descriptions
Table 3. Ball Descriptions
Symbol
Type
Description
CK, CK#
Input
Differential Clock: CK, CK# are driven by the system clock. All SDRAM input signals are
sampled on the crossing of positive edge of CK and negative edge of CK#. Output (Read) data
is referenced to the crossings of CK and CK# (both directions of crossing).
CKE
Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes LOW
synchronously with clock, the internal clock is suspended from the next clock cycle and the
state of output and burst address is frozen as long as the CKE remains LOW. When all banks
are in the idle state, deactivating the clock controls the entry to the Power Down and Self
Refresh modes.
BA0-BA2
Input
Bank Address: BA0-BA2 define to which bank the BankActivate, Read, Write, or
BankPrecharge command is being applied.
A0-A13
Input
Address Inputs: A0-A13 are sampled during the BankActivate command (row address A0-A13)
and Read/Write command (column address A0-A9 with A10 defining Auto Precharge). A13
Row address use on x8 components only.
CS#
Input
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder.
All commands are masked when CS# is sampled HIGH. CS# provides for external bank
selection on systems with multiple banks. It is considered part of the command code.
RAS#
Input
Row Address Strobe: The RAS# signal defines the operation commands in conjunction with
the CAS# and WE# signals and is latched at the crossing of positive edges of CK and negative
edge of CK#. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH," either the
BankActivate command or the Precharge command is selected by the WE# signal. When the
WE# is asserted "HIGH," the BankActivate command is selected and the bank designated by
BA is turned on to the active state. When the WE# is asserted "LOW," the Precharge
command is selected and the bank designated by BA is switched to the idle state after the
precharge operation.
CAS#
Input
Column Address Strobe: The CAS# signal defines the operation commands in conjunction
with the RAS# and WE# signals and is latched at the crossing of positive edges of CK and
negative edge of CK#. When RAS# is held "HIGH" and CS# is asserted "LOW," the column
access is started by asserting CAS# "LOW." Then, the Read or Write command is selected by
asserting WE# “HIGH " or “LOW".
WE#
Input
Write Enable: The WE# signal defines the operation commands in conjunction with the RAS#
and CAS# signals and is latched at the crossing of positive edges of CK and negative edge of
CK#. The WE# input is used to select the BankActivate or Precharge command and Read or
Write command.
DQS,
Input /
DQS#
Output
Bidirectional Data Strobe: output with read data, input with write data. Edge aligned with
read data, centered with write data. For the RDQS option using DM pin can be enabled via
the EMR(1) to simplify read timing.The data strobes DQS and RDQS may be used in single
ended mode or paired with the optional complementary signals DQS# and RDQS# to provide
differential pair signaling to the system during both reads and writes. An EMRS(1) control bit
enables or disables the complementary data strobe signals.
RDQS
RDQS#
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
DM
Input
Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle. x8
device, the function of DM or RDQS/RQDS# is enabled by EMRS command.
DQ0 – DQ7
Input /
Output
ODT
Input
On Die Termination: ODT enables internal termination resistance. It is applied to each DQ,
DQS/DQS#, RDQS/RDQS# and DM signal. The ODT pin is ignored if the EMR (1) is programmed
to disable ODT.
VDD
Supply
Power Supply: +1.8V 0.1V
VSS
Supply
Ground
VDDL
Supply
DLL Power Supply: +1.8V 0.1V
VSSDL
Supply
DLL Ground
VDDQ
Supply
DQ Power: +1.8V 0.1V.
VSSQ
Supply
DQ Ground
VREF
Supply
Reference Voltage for Inputs: +0.5*VDDQ
NC
-
Data I/O: Bi-directional data bus.
No Connect: These pins should be left unconnected.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Operation Mode
Table 4 shows the truth table for the operation commands.
Table 4. Truth Table (Note (1), (2))
Command
State
CKEn-1
CKEn
DM
Idle(3)
H
H
X
V
Row address
L
L
H
H
Single Bank Precharge
Any
H
H
X
V
L
X
L
L
H
L
All Banks Precharge
Any
H
H
X
X
H
X
L
L
H
L
Write
Active(3)
H
H
X
V
L
L
H
L
L
Write with AutoPrecharge
Active(3)
H
H
X
V
H
Column
address
L
H
L
L
Read
Active(3)
H
H
X
V
L
L
H
L
H
Read and Autoprecharge
Active(3)
H
H
X
V
H
L
H
L
H
(Extended) Mode Register Set
Idle
H
H
X
V
L
L
L
L
No-Operation
Any
H
X
X
X
X
X
L
H
H
H
Active(4)
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
Refresh
Idle
H
H
X
X
X
X
L
L
L
H
SelfRefresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
SelfRefresh Exit
Idle
L
H
X
X
X
X
H
X
X
X
L
H
H
H
Power Down Mode Entry
Idle
H
L
X
X
X
X
H
X
X
X
L
H
H
H
Power Down Mode Exit
Any
L
H
X
X
X
X
H
X
X
X
L
H
H
H
Data Input Mask Disable
Active
H
X
L
X
X
X
X
X
X
X
Data Input Mask Enable(5)
Active
H
X
H
X
X
X
NOTE 1: V=Valid data, X=Don't Care, L=Low level, H=High level
NOTE 2: CKEn signal is input level when commands are provided.
NOTE 3: CKEn-1 signal is input level one clock cycle before the commands are provided.
NOTE 4: These are states of bank designated by BA signal.
NOTE 5: Device state is 4, and 8 burst operation.
NOTE 6: LDM and UDM can be enabled respectively.
X
X
X
X
BankActivate
Burst Stop
BA0-2 A10 A0-9, 11-13
(A0 – A9)
Column
address
(A0 – A9)
OP code
CS#
RAS# CAS#
WE#
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Functional Description
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for a
burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is
then followed by a Read or Write command. The address bits registered coincident with the active command are used to
select the bank and row to be accessed (BA0-BA2 select the bank; A0-A13 select the row). The address bits registered
coincident with the Read or Write command are used to select the starting column location for the burst access and to
determine if the auto precharge command is to be issued.
Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information covering
device initialization, register definition, command descriptions, and device operation.
Power-up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation.
The following sequence is required for POWER UP and Initialization.
*1
1. Apply power and attempt to maintain CKE below 0.2*VDDQ and ODT at a low state (all other inputs may be undefined.)
The VDD voltage ramp time must be no greater than 200ms from when VDD ramps from 300mV to VDDmin; and during the
VDD voltage ramp, |VDD-VDDQ| ≦ 0.3V
- VDD, VDDL and VDDQ are driven from a single power converter output, AND
- VTT is limited to 0.95 V max, AND
- VREF tracks VDDQ/2.
or
- Apply VDD before or at the same time as VDDL.
- Apply VDDL before or at the same time as VDDQ.
- Apply VDDQ before or at the same time as VTT & VREF.
At least one of these two sets of conditions must be met.
2. Start clock and maintain stable condition.
3. For the minimum of 200 s after stable power and clock (CK, CK#), then apply NOP or deselect and take CKE HIGH.
4. Wait minimum of 400ns then issue precharge all command. NOP or deselect applied during 400ns period.
5. Issue EMRS(2) command. (To issue EMRS (2) command, provide “LOW” to BA0 and BA2, “HIGH” to BA1.)
6. Issue EMRS (3) command. (To issue EMRS (3) command, provide “LOW” to BA2, “HIGH” to BA0 and BA1.)
7. Issue EMRS to enable DLL. (To issue "DLL Enable" command, provide "LOW" to A0, "HIGH" to BA0 and "LOW" to BA1 and
BA2.)
8. Issue a Mode Register Set command for “DLL reset”.
(To issue DLL reset command, provide "HIGH" to A8 and "LOW" to BA0-BA2)
9. Issue precharge all command.
10. Issue 2 or more auto-refresh commands.
11. Issue a mode register set command with LOW to A8 to initialize device operation. (i.e. to program operating
parameters without resetting the DLL.)
12. At least 200 clocks after step 8, execute OCD Calibration (Off Chip Driver impedance adjustment).If OCD calibration is not
used, EMRS OCD Default command (A9=A8=A7=HIGH) followed by EMRS OCD calibration Mode Exit command
(A9=A8=A7=LOW) must be issued with other operating parameters of EMRS.
13. The DDR2 SDRAM is now ready for normal operation.
NOTE 1: To guarantee ODT off, VREF must be valid and a LOW level must be applied to the ODT pin.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Mode Register Set(MRS)
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls CAS latency,
burst length, burst sequence, test mode, DLL reset, WR, and various vendor specific options to make DDR2 SDRAM useful
for various applications.The default value of the mode register is not defined, therefore the mode register must be
programmed during initialization for proper operation. The mode register is written by asserting LOW on CS#, RAS#, CAS#,
WE#, BA0 and BA1, while controlling the state of address pins A0 - A13. The DDR2 SDRAM should be in all bank precharge
state with CKE already HIGH prior to writing into the mode register.The mode register set command cycle time (t MRD) is
required to complete the write operation to the mode register. The mode register contents can be changed using the same
command and clock cycle requirements during normal operation as long as all bank are in the precharge state.The mode
register is divided into various fields depending on functionality.
- Burst Length Field (A2, A1, A0) : This field specifies the data length of column access and selects the Burst Length.
- Addressing Mode Select Field (A3) : The Addressing Mode can be Interleave Mode or Sequential Mode. Both Sequential
Mode and Interleave Mode support burst length of 4 and 8.
- CAS Latency Field (A6, A5, A4) : This field specifies the number of clock cycles from the assertion of the Read command to
the first read data. The minimum whole value of CAS Latency depends on the frequency of CK. The
minimum whole value satisfying the following formula must be programmed into this field.
(tCAC(min) ≦ CAS Latency X tCK)
- Test Mode Field (A7); DLL Reset Mode Field (A8) : These two bits must be programmed to "00" in normal operation.
- Write recovery Field (A11, A10, A9) : The WR register is used by the DDR2 SDRAM during WRITE with auto precharge operation. The WR
register is used by the DDR2 SDRAM during WRITE with auto precharge operation.
- Active Power down Field (A12) : PD mode enables the user to determine the active power-down mode, which determines performance
versus power savings. oes not apply to precharge PD mode.
- (BA0-BA1): Bank addresses to define MRS selection.
Table 5. Mode Register Bitmap
BA2 BA1 BA0 A13 A12 A11 A10
*2
0
0
0
A8
0
1
*2
0
PD
A9
WR
A7
DLL TM
DLL Reset
No
Yes
A12 Active power down exit time
0
Fast exit (use tXARD)
1
Slow exit (use tXARDS)
A8
A7
0
1
A6
A5
A4
CAS Latency
Mode
Normal
Test
A3
0
1
A3
A2
BT
A1
A0
Burst Length
Burst Type
Sequential
Interleave
A2
0
0
Address Field
Mode Register
A1
1
1
A0
0
1
BL
4
8
*1
Write recovery for autoprecharge
A11
A10
A9
WR(cycles)
0
0
0
Reserved
0
0
1
2
A6
0
0
A5
0
0
A4
0
1
CAS Latency
Reserved
Reserved
BA1
BA0
MRS Mode
0
1
0
3
0
1
0
Reserved
0
0
1
1
0
1
0
1
MR
EMR(1)
EMR(2)
EMR(3)
0
1
1
1
1
1
0
0
1
1
1
0
1
0
1
4
5
6
Reserved
Reserved
0
1
1
1
1
1
0
0
1
1
1
0
1
0
1
3
4
5
6
Reserved
NOTE 1: For DDR2-800, WR min is determined by tCK (avg) max and WR max is determined by tCK(avg) min. WR [cycles] = RU
{tWR[ns]/tCK(avg)[ns]}, where RU stands for round up. The mode register must be programmed to this value.This is also used with
tRP to determine tDAL.
NOTE 2: BA2 and A13 are reserved for future use and must be set to 0 when programming the MR.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Extended Mode Register Set (EMRS)
- EMR(1)
The extended mode register(1) stores the data for enabling or disabling the DLL, output driver strength, ODT value
selection and additive latency. The default value of the extended mode register is not defined, therefore the extended
mode register must be written after power-up for proper operation. The extended mode register is written by asserting
LOW on CS#, RAS#, CAS#, WE#, BA1 and HIGH on BA0, while controlling the states of address pins A0 ~ A13. The DDR2
SDRAM should be in all bank precharge with CKE already HIGH prior to writing into the extended mode register. The mode
register set command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register.
Mode register contents can be changed using the same command and clock cycle requirements during normal operation
as long as all banks are in the precharge state. A0 is used for DLL enable or disable. A1 is used for enabling a half strength
data-output driver. A3~A5 determine the additive latency, A2 and A6 are used for ODT value selection, A7~A9 are used for
OCD control, A10 is used for DQS# disable and A11 is used for RDQS enable.
- DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning
to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self refresh operation
and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled (and subsequently reset),
200 clock cycles must occur before a Read command can be issued to allow time for the internal clock to be synchronized
with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters.
Table 6. Extended Mode Register EMR (1) Bitmap
BA2 BA1 BA0 A13 A12 A11 A10
*3
0
0
1
BA1
0
0
1
1
A9
0
0
0
1
1
A10
0
1
*3
0
BA0
0
1
0
1
A8
0
0
1
0
1
DQS#
Enable
Disable
Qoff
RDQS
A9
DQS#
A8
A7
A6
A5
A3
A2
OCD program
Rtt
Additive Latency
Rtt
MRS mode
MR
EMR(1)
EMR(2)
EMR(3)
A7
0
1
0
0
1
A6
0
0
1
1
A2
0
1
0
1
A4
OCD Calibration mode exit; maintain setting
Reserved
Reserved
Reserved
*1
OCD Calibration default
*2
Qoff
Output buffer enabled
Output buffer disabled
A11
0
1
RDQS Enable
Disable
Enable
*4
A5
0
0
0
0
1
1
1
1
A0 Address Field
D.I.C DLL Extended Mode Register
Rtt(NOMINAL)
ODT Disable
75Ω
150Ω
50Ω
OCD Calibration Program
A12
0
1
A1
A0
0
1
DLL Enable
Enable
Disable
A1
Output Driver
Impedance Control
0
1
Full strength
Reduced strength
A4
0
0
1
1
0
0
1
1
A3
0
1
0
1
0
1
0
1
Additive Latency
0
1
2
3
4
5
6
Reserved
NOTE 1: After setting to default, OCD calibration mode needs to be exited by setting A9-A7 to 000.
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NOTE 2: Output disabled – DQs, DQSs, DQSs#, RDQS, RDQS#. This feature is intended to be used during IDD characterization of read
current.
NOTE 3: A13 and BA2 are reserved for future use and must be set to 0 when programming the MR.
NOTE 4: If RDQS is enabled, the DM function is disabled. RDQS is active for reads and do not care for writes.
Table 7. Extended Mode Register EMR (1) Bitmap
A11
A10
(RDQS Enable)
(DQS# Enable)
0(Disable)
0(Disable)
1(Enable)
1(Enable)
0(Enable)
1(Disable)
0(Enable)
1(Disable)
RDQS
/DM
RDQS#
DQS
DQS#
DM
DM
RDQS
RDQS
Hi-z
Hi-z
RDQS#
Hi-z
DQS
DQS
DQS
DQS
DQS#
Hi-z
DQS#
Hi-z
- EMR(2)
The extended mode register (2) controls refresh related features. The default value of the extended mode register (2) is
not defined, therefore the extended mode register (2) must be written after power-up for proper operation. The extended
mode register(2) is written by asserting LOW on CS#, RAS#, CAS#, WE#, HIGH on BA1 and LOW on BA0, while controlling
the states of address pins A0 ~ A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH prior to
writing into the extended mode register (2). The mode register set command cycle time (t MRD) must be satisfied to
complete the write operation to the extended mode register (2). Mode register contents can be changed using the same
command and clock cycle requirements during normal operation as long as all banks are in the precharge state.
Table 8. Extended Mode Register EMR(2) Bitmap
BA2 BA1 BA0 A13 A12 A11 A10
*3
0
1
*1
0
0
A7
0
1
A9
A8
A7
A6
A5
A4
SRF
A3
A2
*1
0
A1
A0 Address Field
Extended Mode Register(2)
High Temperature Self-Refresh Rate Enable
Disable
*2
Enable
NOTE 1: The rest bits in EMRS(2) are reserved for future use and all bits in EMRS(2) except A7, BA0 and BA1 must be programmed to 0
when setting the extended mode register(2) during initialization.
NOTE 2: Due to the migration nature, user needs to ensure the DRAM part supports higher than 85℃ Tcase temperature self-refresh
entry. If the high temperature self-refresh mode is supported then controller can set the EMRS2[A7] bit to enable the selfrefresh rate in case of higher than 85℃ temperature self-refresh operation.
NOTE 3: BA2 is reserved for future use and must be set to 0 when programming the MR.
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- EMR(3)
No function is defined in extended mode register(3).The default value of the extended mode register(3) is not defined,
therefore the extended mode register(3) must be programmed during initialization for proper operation.
Table 9. Extended Mode Register EMR (3) Bitmap
BA2 BA1 BA0 A13 A12 A11 A10
*1
0
1
A9
A8
A7
1
A6
0
A5
A4
A3
A2
*1
A1
A0 Address Field
Extended Mode Register(3)
NOTE 1: All bits in EMR (3) except BA0 and BA1 are reserved for future use and must be set to 0 when programming the
EMR (3).
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ODT (On Die Termination)
On Die Termination (ODT) is a feature that allows a DRAM to turn on/off termination resistance for each DQ, DQS/DQS#,
RDQS/RDQS#, DM signal via the ODT control pin. The ODT feature is designed to improve signal integrity of the memory
channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all DRAM devices.
The ODT function is supported for ACTIVE and STANDBY modes. It is turned off and not supported in SELF REFRESH mode.
Figure 4. Functional representation of ODT
VDDQ
VDDQ
VDDQ
SW1
SW2
SW3
Rval1
Rval2
Rval3
DRAM
Input
Buffer
Input
pin
Rval1
Rval2
Rval3
SW1
SW2
SW3
VSSQ
VSSQ
VSSQ
Switch (sw1, sw2, sw3) is enabled by ODT pin.
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR.
Termination included on all DQs, DM, DQS, DQS#, RDQS and RDQS# pins
Table 10. ODT DC Electrical Characteristics
Parameter/Condition
Symbol
Min.
Nom.
Max.
Unit
Rtt effective impedance value for EMRS(A6,A2)=0,1;75Ω
Rtt1(eff)
60
75
90
Ω
Rtt effective impedance value for EMRS(A6,A2)=1,0;150Ω
Rtt2(eff)
120
150
180
Ω
Rtt effective impedance value for EMRS(A6,A2)=1,1;50Ω
Rtt3(eff)
40
50
60
Ω
Rtt mismatch tolerance between any pull-up/pull-down pair
Rtt(mis)
-6
6
%
NOTE 1: Measurement Definition for Rtt(eff):
Apply VIH (ac) and VIL (ac) to test pin seperately, then measure current I(VIH(ac)) and I(VIL(ac)) respectively.
Rtt(eff)=
Note
1
1
1
2
VIH (ac ) VIL (ac )
I(VIH (ac))-I(VIL (ac))
NOTE 2: Measurement Defintion for Rtt (mis): Measure voltage (VM) at test pin (midpoint) with no load.
2xVM
Rtt(mis)=
1 100%
VDDQ
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Bank activate command
The Bank Activate command is issued by holding CAS# and WE# HIGH with CS# and RAS# LOW at the rising edge of the clock.
The bank addresses BA0-BA2 are used to select the desired bank. The row addresses A0 through A13 are used to determine
which row to activate in the selected bank. The Bank Activate command must be applied before any Read or Write operation
can be executed. Immediately after the bank active command, the DDR2 SDRAM can accept a read or write command (with
or without Auto-Precharge) on the following clock cycle. If a R/W command is issued to a bank that has not satisfied the
tRCDmin specification, then additive latency must be programmed into the device to delay the R/W command which is
internally issued to the device. The additive latency value must be chosen to assure t RCDmin is satisfied. Additive latencies of 0,
1, 2, 3, and 4 are supported. Once a bank has been activated it must be precharged before another Bank Activate command
can be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP, respectively. The minimum
time interval between successive Bank Activate commands to the same bank is determined (tRC). The minimum time interval
between Bank Active commands is tRRD
In order to ensure that 8 bank devices do not exceed the instantaneous current supplying capability of 4 bank devices, certain
restrictions on operation of the 8 bank devices must be observed. There are two rules. One for restricting the number of
sequential ACT commands that can be issued and another for allowing more time for RAS precharge for a Precharge All
command. The rules are as follows:
- 8 bank device Sequential Bank Activation Restriction : No more than 4 banks may be activated in a rolling tFAW window.
Converting to clocks is done by dividing tFAW[ns] by tCK[ns] or tCK[ns], depending on the speed bin, and rounding up to next
integer value. As an example of the rolling window, if RU{ (tFAW / tCK) } or RU{ (tFAW / tCK)} is 10 clocks, and an activate
command is issued in clock N, no more than three further activate commands may be issued at or between clock N+1 and
N+9.
- 8 bank device Precharge All Allowance : tRP for a Precharge All command for an 8 Bank device will equal to tRP + 1 x tCK or tRP
+ 1 x tCK, depending on the speed bin, where tRP = RU{ tRP / tCK} and tRP is the value for a single bank precharge.
Read and Write access modes
After a bank has been activated, a Read or Write cycle can be executed. This is accomplished by setting RAS# HIGH, CS# and
CAS# LOW at the clock’s rising edge. WE# must also be defined at this time to determine whether the access cycle is a Read
operation (WE# HIGH) or a Write operation (WE# LOW). The DDR2 SDRAM provides a fast column access operation. A single
Read or Write Command will initiate a serial Read or Write operation on successive clock cycles. The boundary of the burst
cycle is strictly restricted to specific segments of the page length. Any system or application incorporating random access
memory products should be properly designed, tested, and qualified to ensure proper use or access of such memory
products. Disproportionate, excessive, and/or repeated access to a particular address or addresses may result in reduction of
product life.
Posted CAS#
Posted CAS# operation is supported to make command and data bus efficient for sustainable bandwidths in DDR2 SDRAM. In
this operation, the DDR2 SDRAM allows a CAS# Read or Write command to be issued immediately after the RAS bank activate
command (or any time during the RAS# -CAS#-delay time, tRCD, period). The command is held for the time of the Additive
Latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of AL and the CAS latency
(CL). Therefore if a user chooses to issue a R/W command before the t RCDmin, then AL (greater than 0) must be written into
the EMR(1). The Write Latency (WL) is always defined as RL - 1 (Read Latency -1) where Read Latency is defined as the sum of
additive latency plus CAS latency (RL=AL+CL). Read or Write operations using AL allow seamless bursts (refer to seamless
operation timing diagram examples in Read burst and Write burst section)
Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (Write cycle), or from memory locations
(Read cycle). The parameters that define how the burst mode will operate are burst sequence and burst length. The DDR2
SDRAM supports 4 bit and 8 bit burst modes only. For 8 bit burst mode, full interleave address ordering is supported,
however, sequential address ordering is nibble based for ease of implementation. The burst length is programmable and
defined by the addresses A0 ~ A2 of the MRS. The burst type, either sequential or interleaved, is programmable and defined
by the address bit 3 (A3) of the MRS. Seamless burst Read or Write operations are supported. Interruption of a burst Read or
Write operation is prohibited, when burst length = 4 is programmed. For burst interruption of a Read or Write burst when
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burst length = 8 is used, see the “Burst Interruption“ section of this datasheet. A Burst Stop command is not supported on
DDR2 SDRAM devices.
Table 11. Burst Definition, Addressing Sequence of Sequential and Interleave Mode
Burst Length
4
8
A2
X
X
X
X
0
0
0
0
1
1
1
1
Start Address
A1
A0
0
0
0
1
1
0
1
1
0
0
0
1
1
0
1
1
0
0
0
1
1
0
1
1
Sequential
Interleave
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 0, 5, 6, 7, 4
2, 3, 0, 1, 6, 7, 4, 5
3, 0, 1, 2, 7, 4, 5, 6
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 4, 1, 2, 3, 0
6, 7, 4, 5, 2, 3, 0, 1
7, 4, 5, 6, 3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
Burst read command
The Burst Read command is initiated by having CS# and CAS# LOW while holding RAS# and WE# HIGH at the rising edge of
the clock. The address inputs determine the starting column address for the burst. The delay from the start of the
command to when the data from the first cell appears on the outputs is equal to the value of the Read Latency (RL). The
data strobe output (DQS) is driven LOW 1 clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the
burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on the DQ pin in
phase with the DQS signal in a source synchronous manner. The RL is equal to an additive latency (AL) plus CAS Latency
(CL). The CL is defined by the Mode Register Set (MRS), similar to the existing SDR and DDR SDRAMs. The AL is defined by
the Extended Mode Register Set (1) (EMRS (1)).
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the
EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by which
the DDR2 SDRAM pin timings are measured is mode dependent. In single ended mode, timing relationships are measured
relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these timing relationships are measured
relative to the crosspoint of DQS and its complement, DQS#. This distinction in timing methods is guaranteed by design
and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin,
DQS#, must be tied externally to VSS through a 20 Ω to 10 KΩ resistor to insure proper operation.
Burst write operation
The Burst Write command is initiated by having CS#, CAS# and WE# LOW while holding RAS# HIGH at the rising edge of the
clock. The address inputs determine the starting column address. Write latency (WL) is defined by a Read latency (RL)
minus one and is equal to (AL + CL -1);and is the number of clocks of delay that are required from the time the Write
command is registered to the clock edge associated to the first DQS strobe. A data strobe signal (DQS) should be driven
LOW (preamble) one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first
rising edge of the DQS following the preamble. The tDQSS specification must be satisfied for each positive DQS transition to
its associated clock edge during write cycles.
The subsequent burst bit data are issued on successive edges of the DQS until the burst length is completed, which is 4 or 8
bit burst. When the burst has finished, any additional data supplied to the DQ pins will be ignored. The DQ Signal is ignored
after the burst write operation is complete. The time from the completion of the burst Write to bank precharge is the write
recovery time (WR). DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending
on the setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design.
The method by which the DDR2 SDRAM pin timings are measured is mode dependent.
In single ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at the
specified AC/DC levels. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and
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its complement, DQS#. This distinction in timing methods is guaranteed by design and characterization. Note that when
differential data strobe mode is disabled via the EMRS, the complementary pin, DQS#, must be tied externally to VSS
through a 20Ω to 10KΩ resistor to insure proper operation.
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Write data mask
One Write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAMs, Consistent with the
implementation on DDR SDRAMs. It has identical timings on Write operations as the data bits, and though used in a unidirectional manner, is internally loaded identically to data bits to insure matched system timing. DM is not used during
read cycles.
Precharge operation
The Precharge command is used to precharge or close a bank that has been activated. The Precharge Command is triggered
when CS#, RAS# and WE# are LOW and CAS# is HIGH at the rising edge of the clock. The Precharge Command can be used
to precharge each bank independently or all banks simultaneously. Three address bits A10, BA2, BA1, and BA0 are used to
define which bank to precharge when the command is issued.
Table 12. Bank Selection for Precharge by address bits
A10
BA2
BA1
BA0
Precharged Bank(s)
LOW
LOW
LOW
LOW
Bank 0 only
LOW
LOW
LOW
HIGH
Bank 1 only
LOW
LOW
HIGH
LOW
Bank 2 only
LOW
LOW
HIGH
HIGH
Bank 3 only
LOW
HIGH
LOW
LOW
Bank 4 only
LOW
HIGH
LOW
HIGH
Bank 5 only
LOW
HIGH
HIGH
LOW
Bank 6 only
LOW
HIGH
HIGH
HIGH
Bank 7 only
HIGH
DON’T CARE
DON’T CARE
DON’T CARE
ALL Banks
Burst read operation followed by precharge
Minimum Read to precharge command spacing to the same bank = AL + BL/2 + max (RTP, 2) - 2 clocks. For the earliest
possible precharge, the precharge command may be issued on the rising edge which “Additive latency (AL) + BL/2 clocks”
after a Read command. A new bank active (command) may be issued to the same bank after the RAS# precharge time (t RP).
A precharge command cannot be issued until tRAS is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock edge that initiates
the last 4-bit prefetch of a Read to Precharge command. This time is called tRTP (Read to Precharge). For BL = 4 this is the
time from the actual read (AL after the Read command) to Precharge command. For BL = 8 this is the time from AL + 2
clocks after the Read to the Precharge command.
Burst Write operation followed by precharge
Minimum Write to Precharge command spacing to the same bank = WL + BL/2 + t WR. For write cycles, a delay must be
satisfied from the completion of the last burst write cycle until the Precharge command can be issued. This delay is known
as a write recovery time (tWR) referenced from the completion of the burst write to the Precharge command. No Precharge
command should be issued prior to the tWR delay, as DDR2 SDRAM does not support any burst interrupt by a Precharge
command. tWR is an analog timing parameter and is not the programmed value for tWR in the MRS.
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Auto precharge operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the Precharge
Command or the auto-precharge function. When a Read or a Write Command is given to the DDR2 SDRAM, the CAS#
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at the
earliest possible moment during the burst read or write cycle. If A10 is LOW when the READ or WRITE Command is issued,
then normal Read or Write burst operation is executed and the bank remains active at the completion of the burst
sequence. If A10 is HIGH when the Read or Write Command is issued, then the auto-precharge function is engaged. During
auto-precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge
on the rising edge which is CAS latency (CL) clock cycles before the end of the read burst. Auto-precharge also be
implemented during Write commands. The precharge operation engaged by the Auto precharge command will not begin
until the last data of the burst write sequence is properly stored in the memory array. This feature allows the precharge
operation to be partially or completely hidden during burst Read cycles (dependent upon CAS latency) thus improving
system performance for random data access. The RAS# lockout circuit internally delays the Precharge operation until the
array restore operation has been completed (tRAS satisfied) so that the auto precharge command may be issued with any
Read or Write command.
Burst read with auto precharge
If A10 is HIGH when a Read Command is issued, the Read with Auto-Precharge function is engaged. The DDR2 SDRAM
starts an Auto-Precharge operation on the rising edge which is (AL + BL/2) cycles later from the Read with AP command if
tRAS(min) and tRTP are satisfied. If tRAS(min) is not satisfied at the edge, the start point of Auto-Precharge operation will be
delayed until tRAS(min) is satisfied. If tRTP(min) is not satisfied at the edge, the start point of Auto-precharge operation will
be delayed until tRTP(min) is satisfied.
In case the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge happens (not at the
next rising clock edge after this event). So for BL = 4 the minimum time from Read with Auto-Precharge to the next
Activate command becomes AL + tRTP + tRP. For BL = 8 the time from Read with Auto-Precharge to the next Activate
command is AL + 2 + tRTP + tRP. Note that both parameters tRTP and tRP have to be rounded up to the next integer value. In
any event internal precharge does not start earlier than two clocks after the last 4-bit prefetch.
A new bank active (command) may be issued to the same bank if the following two conditions are satisfied simultaneously:
(1) The RAS# precharge time (tRP) has been satisfied from the clock at which the Auto-Precharge begins.
(2) The RAS# cycle time (tRC) from the previous bank activation has been satisfied.
Burst write with auto precharge
If A10 is HIGH when a Write Command is issued, the Write with Auto-Precharge function is engaged. The DDR2 SDRAM
automatically begins precharge operation after the completion of the burst write plus Write recovery time (tWR). The bank
undergoing auto-precharge from the completion of the write burst may be reactivated if the following two conditions are
satisfied.
(1) The data-in to bank activate delay time (WR + tRP) has been satisfied.
(2) The RAS# cycle time (tRC) from the previous bank activation has been satisfied.
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Table 13. Precharge & Auto Precharge Clariification
Minimum Delay between “From Command”
Unit Note
to “To Command”
Precharge (to same Bank as Read)
AL+BL/2+max(RTP,2)-2
Read
tCK 1,2
Precharge All
AL+BL/2+max(RTP,2)-2
Precharge (to same Bank as Read w/AP)
AL+BL/2+max(RTP,2)-2
Read w/AP
tCK 1,2
Precharge All
AL+BL/2+max(RTP,2)-2
Precharge (to same Bank as Write)
WL+BL/2+tWR
Write
tCK
2
Precharge All
WL+BL/2+tWR
Precharge (to same Bank as Write w/AP)
WL+BL/2+tWR
Write w/AP
tCK
2
Precharge All
WL+BL/2+tWR
Precharge (to same Bank as Precharge)
1
Precharge
tCK
2
Precharge All
1
Precharge
1
Precharge All
tCK
2
Precharge All
1
NOTE 1: RTP [cycles] =RU {tRTP [ns]/tCK (avg) [ns]}, where RU stands for round up.
NOTE 2: For a given bank, the precharge period should be counted from the latest precharge command, either one bank
precharge or precharge all, issued to that bank.The prechrage period is satisfied after t RP or tRPall(=tRP for 8 bank device +
1X tCK) depending on the latest precharge command issued to that bank.
From Command
To Command
Refresh command
When CS#, RAS# and CAS# are held LOW and WE# HIGH at the rising edge of the clock, the chip enters the Refresh mode
(REF). All banks of the DDR2 SDRAM must be precharged and idle for a minimum of the Precharge time (t RP) before the
Refresh command (REF) can be applied. An address counter, internal to the device, supplies the bank address during the
refresh cycle. No control of the external address bus is required once this cycle has started.
When the refresh cycle has completed, all banks of the DDR2 SDRAM will be in the precharged (idle) state. A delay
between the Refresh command (REF) and the next Activate command or subsequent Refresh command must be greater
than or equal to the Refresh cycle time (tRFC).To allow for improved efficiency in scheduling and switching between tasks,
some flexibility in the absolute refresh interval is provided. A maximum of eight Refresh commands can be posted to any
given DDR2 SDRAM, meaning that the maximum absolute interval between any Refresh command and the next Refresh
command is 9 * tREFI.
Self refresh operation
The Self Refresh command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is powered down.
When in the Self Refresh mode, the DDR2 SDRAM retains data without external clocking. The DDR2 SDRAM device has a
built-in timer to accommodate Self Refresh operation. The Self Refresh Command is defined by having CS#, RAS#, CAS# and
CKE# held LOW with WE# HIGH at the rising edge of the clock. ODT must be turned off before issuing Self Refresh
command, by either driving ODT pin LOW or using EMRS command. Once the Command is registered, CKE must be held
LOW to keep the device in Self Refresh mode. The DLL is automatically disabled upon entering Self Refresh and is
automatically enabled upon exiting Self Refresh. When the DDR2 SDRAM has entered Self Refresh mode all of the external
signals except CKE, are “don’t care”. For proper Self Refresh operation all power supply pins (VDD, VDDQ, VDDL and VREF) must
be at valid levels. The DRAM initiates a minimum of one refresh command internally within t CKE period once it enters Self
Refresh mode. The clock is internally disabled during Self Refresh Operation to save power. The minimum time that the
DDR2 SDRAM must remain in Self Refresh mode is tCKE. The user may change the external clock frequency or halt the
external clock one clock after Self Refresh entry is registered, however, the clock must be restarted and stable before the
device can exit Self Refresh operation.
The procedure for exiting Self Refresh requires a sequence of commands. First, the clock must be stable prior to CKE going
back HIGH. Once Self Refresh Exit is registered, a delay of at least tXSNR must be satisfied before a valid command can be
issued to the device to allow for any internal refresh in progress. CKE must remain HIGH for the entire Self Refresh exit
period tXSRD for proper operation except for Self Refresh re-entry. Upon exit from Self Refresh, the DDR2 SDRAM can be put
back into Self Refresh mode after waiting at least tXSNR period and issuing one refresh command(refresh period of tRFC).
NOP or Deselect commands must be registered on each positive clock edge during the Self Refresh exit interval t XSNR. ODT
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should be turned off during tXSRD. The use of Self Refresh mode introduces the possibility that an internally timed refresh
event can be missed when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, the DDR2 SDRAM
requires a minimum of one extra auto refresh command before it is put back into Self Refresh mode.
Power-Down
Power-down is synchronously entered when CKE is registered LOW along with NOP or Deselect command. No read or
write operation may be in progress when CKE goes LOW. These operations are any of the following: read burst or write
burst and recovery. CKE is allowed to go LOW while any of other operations such as row activation, precharge or
autoprecharge, mode register or extended mode register command time, or autorefresh is in progress.
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset after exiting power-down
mode for proper read operation.
If power-down occurs when all banks are precharged, this mode is referred to as Precharge Power-down; if power-down
occurs when there is a row active in any bank, this mode is referred to as Active Power-down. For Active Power-down two
different power saving modes can be selected within the MRS register, address bit A12. When A12 is set to “LOW” this
mode is referred as “standard active power-down mode” and a fast power-down exit timing defined by the tXARD timing
parameter can be used. When A12 is set to “HIGH” this mode is referred as a power saving “LOW power active powerdown mode”. This mode takes longer to exit from the power-down mode and the tXARDS timing parameter has to be
satisfied. Entering power-down deactivates the input and output buffers, excluding CK, CK#, ODT and CKE. Also the DLL is
disabled upon entering precharge power-down or slow exit active power-down, but the DLL is kept enabled during fast exit
active power-down. In power-down mode, CKE LOW and a stable clock signal must be maintained at the inputs of the
DDR2 SDRAM, and all other input signals are “Don’t Care”. Power-down duration is limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or Deselect command). A
valid, executable command can be applied with power-down exit latency, tXP, tXARD or tXARDS, after CKE goes HIGH. Powerdown exit latencies are defined in the AC spec table of this data sheet.
Asynchronous CKE LOW Event
DRAM requires CKE to be maintained “HIGH” for all valid operations as defined in this datasheet. If CKE asynchronously
drops “LOW” during any valid peration DRAM is not guaranteed to preserve the contents of array. If this event occurs,
memory controller must satisfy DRAM timing specification tDelay efore turning off the clocks. Stable clocks must exist at
the input of DRAM before CKE is raised “HIGH” again. DRAM must be fully re-initialized. DRAM is ready for normal
operation after the initialization sequence.
Input clock frequency change during precharge power down
DDR2 SDRAM input clock frequency can be changed under following condition: DDR2 SDRAM is in precharged power down
mode. ODT must be turned off and CKE must be at logic LOW level. A minimum of 2 clocks must be waited after CKE goes
LOW before clock frequency may change. SDRAM input clock frequency is allowed to change only within minimum and
maximum operating frequency specified for the particular speed grade. During input clock frequency change, ODT and CKE
must be held at stable LOW levels. Once input clock frequency is changed, stable new clocks must be provided to DRAM
before precharge power down may be exited and DLL must be RESET via EMRS after precharge power down exit.
Depending on new clock frequency an additional MRS command may need to be issued to appropriately set the WR, CL etc.
During DLL re-lock period, ODT must remain off. After the DLL lock time, the DRAM is ready to operate with new clock
frequency.
No operation command
The No Operation Command should be used in cases when the DDR2 SDRAM is in an idle or a wait state. The purpose of
the No Operation Command (NOP) is to prevent the DDR2 SDRAM from registering any unwanted commands between
operations. A No Operation Command is registered when CS# is LOW with RAS#, CAS#, and WE# held HIGH at the rising
edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a burst
read or write cycle.
Deselect command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS# is
brought HIGH at the rising edge of the clock, the RAS#, CAS#, and WE# signals become don’t cares.
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Table 14. Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Unit
Note
VDD
Voltage on VDD pin relative to Vss
-1.0 ~ 2.3
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
-0.5 ~ 2.3
V
1,3
VDDL
Voltage on VDDL pin relative to Vss
-0.5 ~ 2.3
V
1,3
VIN, VOUT Voltage on any pin relative to Vss
- 0.5 ~ 2.3
V
1,4
Storage temperature
- 55~100
1,2
°C
Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the devices.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE2: Storage temperature is the case temperature on the center/top side of the DRAM.
NOTE3: When VDD and VDDQ and VDDL are less than 500mV, Vref may be equal to or less than 300mV.
NOTE4: Voltage on any input or I/O may not exceed voltage on V DDQ.
TSTG
NOTE1:
Table 15. Operating Temperature Condition
Symbol
TOPER
Parameter
Operating temperature
Rating
Unit
Note
Commercial
0~85
°C
1, 2
Industrial
-40~95
°C
1, 2
NOTE1: Operating temperature is the case surface temperature on center/top of the DRAM.
NOTE2: When TOPER exceeds 85℃, it is required to set 3.9us tREFI in auto refresh mode or to set ‘1’ for EMRS(2) bit A7 in self
refresh mode.
Table 16. Recommended DC Operating Conditions (SSTL_1.8)
Symbol
Parameter
Min.
Typ.
Max.
Unit Note
VDD
Power supply voltage
1.7
1.8
1.9
V
1
VDDL
Power supply voltage for DLL
1.7
1.8
1.9
V
5
VDDQ
Power supply voltage for I/O Buffer
1.7
1.8
1.9
V
1,5
VREF
Input reference voltage
0.49 x VDDQ
0.5 x VDDQ
0.51 x VDDQ
mV
2,3
VTT
Termination voltage
VREF - 0.04
VREF
VREF + 0.04
V
4
NOTE1: There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all conditions
VDDQ must be less than or equal to VDD.
NOTE2: The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of
VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
NOTE3: Peak to peak ac noise on VREF may not exceed ±2 % VREF (dc).
NOTE4: VTT of transmitting device must track VREF of receiving device.
NOTE5: VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together
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Table 17. Input logic level (VDD = 1.8V 0.1V, TOPER = -40~95 C)
Symbol
-25
Parameter
Unit
Min.
Max.
VREF + 0.125
VDDQ + 0.3
V
VIH (DC)
DC Input logic High Voltage
VIL (DC)
DC Input Low Voltage
-0.3
VREF - 0.125
V
VIH (AC)
AC Input High Voltage
VREF + 0.2
VDDQ+VPEAK
V
VIL (AC)
AC Input Low Voltage
VssQ –VPEAK
VREF – 0.2
V
VID (AC)
AC Differential Voltage
0.5
VDDQ + 0.6
V
VIX (AC) AC Differential crosspoint Voltage
0.5 x VDDQ -0.175
0.5 x VDDQ+0.175
V
NOTE1: Refer to Overshoot/undershoot specification for Vpeak value: maximum peak amplitude allowed for overshoot and
undershoot.
Table 18. AC Input test conditions (VDD = 1.8V 0.1V, TOPER = -40~95 C)
Symbol
VREF
Parameter
Input reference voltage
VSWING(max) Input signal maximum peak to peak swing
-25
Unit
Note
0.5 x VDDQ
V
1
1.0
V
1
Slew Rate Input signal minimum slew rate
1.0
V/ns 2, 3
NOTE1: Input waveform timing is referenced to the input signal crossing through the V IH /IL (ac) level applied to the device
under test.
NOTE2: The input signal minimum slew rate is to be maintained over the range from V REF to VIH(ac) min for rising edges and
the range from VREF to VIL (ac) max for falling edges .
NOTE3: AC timings are referenced with input waveforms switching from VIL (ac) to VIH (ac) on the positive transitions and VIH
(ac) to VIL (ac) on the negative transitions.
Table 19. Differential AC output parameters (VDD = 1.8V 0.1V, TOPER = -40~95 C)
Symbol
-25
Parameter
Min.
Max.
Unit
Note
Vox(ac)
AC Differential Cross Point Voltage
0.5xVDDQ-0.125
0.5xVDDQ+0.125
V
1
NOTE1: The typical value of VOX (ac) is expected to be about 0.5 x VDDQ of the transmitting device and VOX (ac) is expected to
track variations in VDDQ. VOX (ac) indicates the voltage at which differential output signals must cross.
Table 20. AC overshoot/undershoot specification for address and control pins
(A0-A12, BA0-BA2, CS#, RAS#, CAS#, WE#, CKE, ODT)
Parameter
-25
Unit
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDD
0.66
V-ns
Maximum undershoot area below VSS
0.66
V-ns
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Table 21. AC overshoot/undershoot specification for clock, data, strobe, and mask pins
(DQ, DQS, DQS#, DM, CK, CK#)
Parameter
-25
Unit
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDD
0.23
V-ns
Maximum undershoot area below VSS
0.23
V-ns
Table 22. Output AC test conditions (VDD = 1.8V 0.1V, TOPER = -40~95 C)
Symbol
Parameter
VOTR
Output timing measurement reference level
NOTE1: The VDDQ of the device under test is referenced.
-25
Unit
Note
0.5xVDDQ
V
1
-25
Unit
Note
-13.4
mA
1, 3, 4
Table 23. Output DC current drive (VDD = 1.8V 0.1V, TOPER = -40~95 C)
Symbol
IOH(dc)
Parameter
Output minimum source DC current
IOL(dc)
Output minimum sink DC current
13.4
mA 2, 3, 4
NOTE1: VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ) /IOH must be less than 21 Ω for values of VOUT between VDDQ and VDDQ - 280
mV.
NOTE2: VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 Ω for values of VOUT between 0 V and 280 mV.
NOTE3: The dc value of VREF applied to the receiving device is set to VTT
NOTE4: The values of IOH (dc) and IOL (dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive
current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an
SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point (see JEDEC
standard: Section 3.3 of JESD8-15A) along a 21 Ω load line to define a convenient driver current for measurement.
Table 24. Capacitance (VDD = 1.8V, f = 1MHz, TOPER = 25 C)
Symbol
DDR2-800
Parameter
Min.
Max.
Delta
Unit
CIN
Input Capacitance : Command and Address
1.0
1.75
0.25
pF
CCK
Input Capacitance (CK, CK#)
1.0
2.0
0.25
pF
CI/O
DM, DQ, DQS Input/Output Capacitance
2.5
3.5
0.5
pF
NOTE: These parameters are periodically sampled and are not 100% tested.
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Table 25. IDD specification parameters and test conditions
(VDD = 1.8V 0.1V, TOPER = -40~95 C)
Parameter & Test Condition
Operating one bank active-precharge current:
tCK =tCK (min), tRC = tRC (min), tRAS = tRAS(min); CKE is HIGH, CS# is HIGH between
valid commands; Address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
Operating one bank active-read-precharge current:
IOUT = 0mA; BL = 4, CL = CL (min), AL = 0; tCK = tCK (min),tRC = tRC (min), tRAS =
tRAS(min), tRCD = tRCD (min);CKE is HIGH, CS# is HIGH between valid
commands;Address bus inputs are switching; Data pattern is same as IDD4W
Precharge power-down current:
All banks idle;tCK =tCK (min); CKE is LOW; Other control and address bus inputs
are STABLE; Data bus inputs are FLOATING
Precharge quiet standby current:
All banks idle; tCK =tCK (min); CKE is HIGH, CS# is HIGH; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Precharge standby current:
All banks idle; tCK = tCK (min); CKE is HIGH, CS# is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Active power-down current:
MRS(A12)=0
All banks open; tCK =tCK (min); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING MRS(A12)=1
Active standby current:
All banks open; tCK = tCK(min), tRAS = tRAS (max), tRP = tRP (min); CKE is HIGH, CS# is
HIGH between valid commands; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
Operating burst write current:
All banks open,continuous burst writes; BL = 4, CL = CL (min), AL = 0; tCK= tCK
(min), tRAS = tRAS (max), tRP = tRP (min); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are switching; Data bus inputs are switching
Operating burst read current:
All banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL = CL (min), AL = 0;
tCK = tCK (min), tRAS = tRAS (max), tRP = tRP (min); CKE is HIGH, CS# is HIGH between
valid commands; Address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
Burst refresh current:
tCK = tCK (min); refresh command at every tRFC (min) interval; CKE is HIGH, CS# is
HIGH between valid commands; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
Self refresh current:
CK and CK# at 0V; CKE ≤ 0.2V;Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Operating bank interleave read current:
All bank interleaving reads, IOUT= 0mA; BL = 4, CL = CL (min), AL =tRCD (min) - 1 x
tCK (min); tCK = tCK (min), tRC = tRC (min), tRRD = tRRD (min), tRCD = tRCD (min); CKE is
HIGH, CS# is HIGH between valid commands; Address bus inputs are STABLE
during DESELECTs.Data pattern is same as IDD4R
Symbol
-25
Max.
Unit
IDD0
70
mA
IDD1
85
mA
IDD2P
10
mA
IDD2Q
35
mA
IDD2N
40
mA
30
mA
10
mA
IDD3N
50
mA
IDD4W
120
mA
IDD4R
120
mA
IDD5
175
mA
IDD6
9
mA
IDD7
250
mA
IDD3P
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Table 26. Electrical Characteristics and Recommended A.C. Operating Conditions
(VDD = 1.8V 0.1V, TOPER = -40~95 C)
Symbol
-25
Parameter
CL=4
tCK(avg)
Average clock period
CL=5
CL=6
tCH(avg)
tCL(avg)
WL
tDQSS
tDSS
tDSH
tDQSH
tDQSL
tWPRE
tWPST
Average clock HIGH pulse width
Average Clock LOW pulse width
Write command to DQS associated clock edge
DQS latching rising transitions to associated clock edges
DQS falling edge to CK setup time
DQS falling edge hold time from CK
DQS input HIGH pulse width
DQS input LOW pulse width
Write preamble
Write postamble
Min.
2.5
2.5
0.48
0.48
Max.
8
8
8
0.52
0.52
RL-1
-0.25
0.2
0.2
0.35
0.35
0.35
0.4
0.25
0.6
Unit
ns
ns
ns
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
Specific
Notes
15, 33, 34
34, 35
34, 35
28
28
10
tIS(base)
Address and Control input setup time
0.175
-
ns
5, 7, 9, 22,
27
tIH(base)
Address and Control input hold time
0.25
-
ns
5, 7, 9, 23,
27
tIPW
Control & Address input pulse width for each input
0.6
-
tCK
tDS(base)
DQ & DM input setup time
0.05
-
ns
6-8, 20, 26,
29
tDH(base)
DQ & DM input hold time
0.125
-
ns
6-8, 21, 26,
29
tDIPW
tAC
tDQSCK
tHZ
tLZ(DQS)
tLZ(DQ)
tDQSQ
DQ and DM input pulse width for each input
DQ output access time from CK, CK#
DQS output access time from CK, CK#
Data-out high-impedance time from CK, CK#
DQS(DQS#) low-impedance time from CK, CK#
DQ low-impedance time from CK, CK#
DQS-DQ skew for DQS and associated DQ signals
CK half pulse width
DQ hold skew factor
DQ/DQS output hold time from DQS
Read preamble
Read postamble
Active to active command period
Four Activate Window
CAS# to CAS# command delay
Write recovery time
Auto Power write recovery + precharge time
Internal Write to Read Command Delay
Internal read to precharge command delay
CKE minimum pulse width
0.35
-0.4
-0.35
-
0.4
0.35
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
ns
tCK
ns
ns
ns
ns
tCK
tHP
tQHS
tQH
tRPRE
tRPST
tRRD
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tCKE
tAC(min)
2tAC(min)
min (tCH,tCL)
tHP -tQHS
0.9
0.4
7.5
35
2
15
WR + tRP
7.5
7.5
3
tAC(max)
tAC(max)
tAC(max)
0.2
0.3
1.1
0.6
-
38
38
18, 38
18, 38
18, 38
13
11, 12, 35
12, 36
37
19, 39
19, 40
4, 30
4, 30
30
14, 31
3, 24, 30
3, 30
25
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tXSNR
tXSRD
tXP
tXARD
tRFC
Exit self refresh to non-read command delay
Exit self refresh to a read command
Exit precharge power down to any command
Exit active power down to read command
Exit active power down to read command(slow exit,
lower power)
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
Mode register set command cycle time
MRS command to ODT update delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Refresh to active/Refresh command time
tREFI
Average periodic refesh interval
tRCD
tRP
tRC
tRAS
RAS# to CAS# Delay time
Row precharge Delay time
Row cycle Delay time
Row active Delay time
tXARDS
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
tMRD
tMOD
tDelay
-40℃ ≦TC≦ +85℃
+85℃ ＜TC≦ +95℃
tRFC+10
200
2
2
-
ns
tCK
tCK
tCK
30
8-AL
-
tCK
1, 2
2
2
16
tAC(min)
tAC(min)+2
2.5
tAC(min)
tAC(min)+2
3
8
2
0
tAC(max)+0.7
2 tCK +tAC(max)+1
2.5
tAC(max)+0.6
2.5 tCK +tAC(max)+1
12
tCK
ns
ns
tCK
ns
ns
tCK
tCK
tCK
ns
tIS+ tCK +tIH
-
ns
15
127.5
12.5
12.5
57.5
45
7.8
3.9
70K
ns
s
s
ns
ns
ns
ns
43
1
6, 16, 38
17, 42
17, 41, 42
30
43
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General notes, which may apply for all AC parameters:
NOTE 1: DDR2 SDRAM AC timing reference load
The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not
intended to be either a precise representation of the typical system environment or a depiction of the actual load presented
by a production tester.
Figure 5. AC timing reference load
VDDQ
DUT
DQ
DQS
DQS#
RDQS
RDQS#
Ouput
25Ω
VTT=VDDQ/2
Timing reference
point
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference
voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS#) signal.
NOTE 2: Slew Rate Measurement Levels
a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals.
For differential signals (e.g. DQS – DQS#) output slew rate is measured between DQS – DQS# = - 500 mV and DQS – DQS#
= + 500 mV. Output slew rate is guaranteed by design, but is not necessarily tested on each device.
b) Input slew rate for single ended signals is measured from VREF (dc) to VIH (ac), min for rising edges and from VREF(dc) to
VIL(ac),max for falling edges.For differential signals (e.g. CK – CK#) slew rate for rising edges is measured from CK – CK# = 250 mV to CK -CK# = + 500 mV (+ 250 mV to - 500 mV for falling edges).
c) VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK#, or betweenDQS and
DQS# for differential strobe.
NOTE 3: DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as bellow
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Figure 6. Slew rate test load
VDDQ
DUT
DQ
DQS
DQS#
RDQS
RDQS#
Ouput
25Ω
VTT=VDDQ/2
Test point
NOTE 4: Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the
setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The
method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single ended mode, timing
relationships are measured relative to the rising or falling edges of DQS crossing at V REF. In differential mode, these timing
relationships are measured relative to the crosspoint of DQS and its complement, DQS#. This distinction in timing methods
is guaranteed by design and characterization. Note that when differential data strobe mode is disabled via the EMRS, the
complementary pin, DQS#, must be tied externally to VSS through a 20 Ω to 10 kΩ resistor to insure proper operation
NOTE 5: AC timings are for linear signal transitions.
NOTE 6: All voltages are referenced to VSS.
NOTE 7: These parameters guarantee device behavior, but they are not necessarily tested on each device.They may be
guaranteed by device design or tester correlation
NOTE 8: Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.
Specific notes for dedicated AC parameters
NOTE 1: User can choose which active power down exit timing to use via MRS (bit 12). t XARD is expected to be used for fast
active power down exit timing. tXARDS is expected to be used for slow active power down exit timing where a lower
power value is defined by each vendor data sheet.
NOTE 2: AL=Additive Latency.
NOTE 3: This is a minimum requirement. Minimum read to precharge timing is AL+BL/2 provided that the t RTP and tRAS (min)
have been satisfied.
NOTE 4: A minimum of two clocks (2* tCK) is required irrespective of operating frequency.
NOTE 5: Timings are specified with command/address input slew rate of 1.0 V/ns.
NOTE 6: Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
NOTE 7: Timings are specified with CK/CK# differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a
differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1 V/ns in single ended mode.
NOTE 8: Data setup and hold time derating.
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet. tDS(base)
and tDH(base) value to the ΔtDS and ΔtDH derating value respectively.
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AS4C128M8D2
Example: tDS (total setup time) =tDS (base) + ΔtDS.For slew rates in between the values listed in Tables 28, the derating values
may obtained by linear interpolation.These values are typically not subject to production test. They are verified by design
and characterization.
Table 27. DDR2-800 tDS/tDH derating with differential data strobe
2.8 V/ns
DQ
Slew
Rate
V/ns
△tDS, △tDH derating values for DD2-800 (All units in ‘ps’; the note applies to the entire table)
DQS,DQS# Differential Slew Rate
2.4 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
△ tDS
△ tDH
2.0
100
63
100
63
100
63
-
-
-
-
-
-
-
-
-
-
-
-
1.5
67
42
67
42
67
42
79
54
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-5
-14
-5
-14
7
-2
19
10
31
22
-
-
-
-
-
-
0.8
-
-
-
-
-13
-31
-1
-19
11
-7
23
5
35
17
-
-
-
-
0.7
-
-
-
-
-
-
-10
-42
2
-30
14
-18
26
-6
38
6
-
-
0.6
-
-
-
-
-
-
-
-
-10
-59
2
-47
14
-35
26
-23
38
-11
0.5
-
-
-
-
-
-
-
-
-
-
-24
-89
-12
-77
0
-65
12
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-52
-140
-40
-128
-28
-116
NOTE 9: tIS and tIH (input setup and hold) derating
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and
tIH(base) value to the ΔtIS and ΔtIH derating value respectively. Example: tIS (total setup time) =
tIS(base) + ΔtIS
For slew rates in between the values listed in Tables 29, the derating values may obtained by linear interpolation.These
values are typically not subject to production test. They are verified by design and characterization
Table 28. Derating values for DDR2-800
Command/
Address Slew rate
(V/ns)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
△tIS and △tIH Derating Values for DDR2-800
CK,CK# Differential Slew Rate
2.0 V/ns
1.5 V/ns
△tIS
△tIH
△tIS
△tIH
+150
+94
+180
+124
+143
+89
+173
+119
+133
+83
+163
+113
+120
+75
+150
+105
+100
+45
+130
+75
+67
+21
+97
+51
0
0
+30
+30
-5
-14
+25
+16
-13
-31
+17
-1
-22
-54
+8
-24
-34
-83
-4
-53
-60
-125
-30
-95
-100
-188
-70
-158
-168
-292
-138
-262
-200
-375
-170
-345
-325
-500
-295
-470
-517
-708
-487
-678
-1000
-1125
-970
-1095
1.0 V/ns
△tIS
△tIH
+210
+154
+203
+149
+193
+143
+180
+135
+160
+105
+127
+81
+60
+60
+55
+46
+47
+29
+38
+6
+26
-23
0
-65
-40
-128
-108
-232
-140
-315
-265
-440
-457
-648
-940
-1065
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Notes
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTE 10: The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this
parameter, but system performance (bus turnaround) will degrade accordingly.
NOTE 11: MIN (tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as provided to the
device (i.e. this value can be greater than the minimum specification limits for tCL and tCH).
NOTE 12: tQH = tHP – tQHS, where:
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tHP = minimum half clock period for any given cycle and is defined by clock HIGH or clock LOW (t CH, tCL). tQHS accounts
for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are, separately, due to data pin skew and output pattern effects, and p-channel to n-channel
variation of the output drivers.
NOTE 13: tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output
drivers as well as output slew rate mismatch between DQS / DQS# and associated DQ in any given cycle.
NOTE 14: tDAL = WR + RU{ tRP[ns] / tCK[ns] }, where RU stands for round up.WR refers to the t WR parameter stored in the MRS.
For tRP, if the result of the division is not already an integer, round up to the next highest integer. tCK refers to the
application clock period.
NOTE 15: The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In case of clock
frequency change during precharge power-down.
NOTE 16: ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on
time max is when the ODT resistance is fully on. Both are measured from t AOND, which is interpreted differently per
speed bin. For DDR2-800, tAOND is 2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual
input clock edges.
NOTE 17: ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is
in high impedance. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-800, if tCK
(avg) = 2.5 ns is assumed, tAOFD is 1.25 ns (= 0.5 x 2.5ns) after the second trailing clock edge counting from the clock edge
that registered a first ODT LOW and by counting the actual input clock edges.
NOTE 18: tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a
specific voltage level which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ).
NOTE 19: tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output
is no longer driving (tRPST), or begins driving (tRPRE). The actual voltage measurement points are not critical as long as the
calculation is consistent.
NOTE 20: Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal
crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input signal
crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling signal applied to the device under test.
DQS, DQS# signals must be monotonic between VIL(dc)max and VIH(dc)min.
NOTE 21: Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced from the differential
data strobe crosspoint to the input signal crossing at the VIH(dc) level for a falling signal and from the differential data
strobe crosspoint to the input signal crossing at the VIL(dc) level for a rising signal applied to the device under test. DQS,
DQS# signals must be monotonic between VIL(dc)max and VIH(dc)min.
NOTE 22: Input waveform timing is referenced from the input signal crossing at the V IH(ac) level for a rising signal and VIL(ac)
for a falling signal applied to the device under test.
NOTE 23: Input waveform timing is referenced from the input signal crossing at the V IL(dc) level for a rising signal and VIH(dc)
for a falling signal applied to the device under test.
NOTE 24: tWTR is at lease two clocks (2 x tCK ) independent of operation frequency.
NOTE 25: tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the
valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may
not transition from its valid level during the time period of tIS + 2 x tCK + tIH.
NOTE 26: If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid
READ can be executed.
NOTE 27: These parameters are measured from a command/address signal (CKE, CS#, RAS#, CAS#, WE#, ODT, BA0, A0, A1,
etc.) transition edge to its respective clock signal (CK/CK#) crossing. The spec values are not affected by the amount of
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clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches
the command/address. That is, these parameters should be met whether clock jitter is present or not.
NOTE 28: These parameters are measured from a data strobe signal (DQS) crossing to its respective clock signal (CK/CK#)
crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are
relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not.
NOTE 29: These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its respective data
strobe signal (DQS/ DQS#) crossing.
NOTE 30: For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM /
tCK(avg)}, which is in clock cycles, assuming all input clock jitter specifications are satisfied.
NOTE 31: tDAL [tCK] = WR [tCK] + tRP [tCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode
register set.
NOTE 32: New units, ‘tCK(avg)’ is introduced in DDR2-800. Unit ‘tCK(avg)’ represents the actual tCK(avg) of the input clock under
operation.
NOTE 33: Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock
jitter spec parameters' and these parameters apply to DDR2-800. The jitter specified is a random jitter meeting a
Gaussian distribution.
Table 29. Input clock jitter spec parameter
Parameter
Clock period jitter
Clock period jitter during DLL locking period
Cycle to cycle clock period jitter
Symbol
-25
Unit
Note
100
ps
33
-80
80
ps
33
tJIT (cc)
-200
200
ps
33
Min.
Max.
tJIT (per)
-100
tJIT(per,lck)
Cycle to cycle clock period jitter during DLL locking
period
Cumulative error across 2 cycles
tJIT(cc,lck)
-160
160
ps
33
tERR (2per)
-150
150
ps
33
Cumulative error across 3 cycles
tERR (3per)
-175
175
ps
33
Cumulative error across 4 cycles
tERR (4per)
-200
200
ps
33
Cumulative error across 5 cycles
tERR (5per)
-200
200
ps
33
Cumulative error across n cycles, n=6...10, inclusive
tERR (6-10per)
-300
300
ps
33
Cumulative error across n cycles, n=11...50, inclusive
tERR (11-50per)
-450
450
ps
33
tJIT (duty)
-100
100
ps
33
Duty cycle jitter
NOTE 34: These parameters are specified per their average values, however it is understood that the following relationship
between the average timing and the absolute instantaneous timing holds at all times. (Min andmax of SPEC values are
to be used for calculations in the table below.)
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Table 30. Absolute clock period average values
Parameter
Absolute clock period
Symbol
tCK (abs)
Min.
tCK(avg),min + tJIT(per),min
Max.
tCK(avg),max + tJIT(per),max
Unit
ps
Absolute clock HIGH pulse width
tCH (abs)
tCL (abs)
tCH(avg),max * tCK(avg),max +
tJIT(duty),max
tCL(avg), max * tCK(avg),max +
tJIT(duty), max
ps
Absolute clock LOW pulse width
tCH(avg),min * tCK(avg),min +
tJIT(duty),min
tCL(avg),min * tCK(avg),min +
tJIT(duty),min
ps
NOTE 35: tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input
specification parameter. It is used in conjunction with t QHS to derive the DRAM output timing tQH. The value to be used
for tQH calculation is determined by the following equation;
tHP = Min ( tCH(abs), tCL(abs) ),
where,
tCH(abs) is the minimum of the actual instantaneous clock HIGH time;
tCL(abs) is the minimum of the actual instantaneous clock LOW time;
NOTE 36: tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and p-channel to
n-channel variation of the output drivers
NOTE 37: tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and t QHS is the
specification value under the max column. {The less half-pulse width distortion present, the larger the tQH value is; and
the larger the valid data eye will be.}
NOTE 38: When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per)
of the input clock. (output deratings are relative to the SDRAM input clock.)
NOTE 39: When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the
input clock. (output deratings are relative to the SDRAM input clock.)
NOTE 40: When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of
the input clock. (output deratings are relative to the SDRAM input clock.)
NOTE 41: When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT(duty),max - tERR(610per),max } and { - tJIT(duty),min - tERR(6-10per),min } of the actual input clock. (output deratings are relative to the
SDRAM input clock.)
NOTE 42: For tAOFD of DDR2-800, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH(avg), average input clock HIGH pulse width of
0.5 relative to tCK(avg). tAOF,min and tAOF,max should each be derated by the same amount as the actual amount of
tCH(avg) offset present at the DRAM input with respect to 0.5.
NOTE 43: If refresh timing is violated, data corruption may occur and the data must be re-writtern with valid data before a
valid READ can be executed.
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Timing Waveforms
Figure 7. Initialization sequence after power-up
tCH tCL
CK
CK#
tIS
CKE
tIS
ODT
Command
EMR
S
PRE
ALL
NOP
tRP
400ns
tMRD
DLL
ENABLE
PRE
ALL
MRS
tMRD
REF
REF
tRP
tRFC
tRFC
DLL
RESET
EMR
S
EMR
S
MRS
tMRD
min 200 Cycle
Follow OCD Flowchart
ANY
CMD
t
OIT
OCD
CAL.MOD
E EXIT
OCD
Default
NOTE 1: To guarantee ODT off, VREF must be valid and a LOW level must be applied to the ODT pin.
Figure 8. ODT update delay timing-tMOD
CMD
EMRS
NOP
NOP
NOP
NOP
NOP
CK#
CK
ODT
tAOFD
Rtt
tMOD, min
Old setting
tMOD, max
Updating
tIS
New setting
NOTE 1: To prevent any impedance glitch on the channel, the following conditions must be met:
- tAOFD must be met before issuing the EMRS command.
- ODT must remain LOW for the entire duration of tMOD window, until tMOD, max is met.
then the ODT is ready for normal operation with the new setting, and the ODT signal may be raised again to turned
on the ODT.
NOTE 2: EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).
NOTE 3: "setting" in this diagram is the Register and I/O setting, not what is measured from outside.
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Figure 9. ODT update delay timing-tMOD, as measured from outside
CK#
CK
CMD
EMRS
NOP
ODT
NOP
NOP
tIS
tAOFD
Rtt
NOP
NOP
tAOND
tMOD, max
New setting
Old setting
NOTE 1: EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt (Nominal).
NOTE 2: "setting" in this diagram is measured from outside.
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Figure 10. ODT timing for active standby mode
T0
T1
T3
T2
T4
T5
T6
CK#
CK
tIS
CKE
tIS
tIS
VIH(ac)
VIL(ac)
ODT
tAOND
Internal
Term Res.
tAOFD
RTT
tAON,min
tAOF,min
tAON,max
tAOF,max
Figure 11. ODT timing for power-down mode
T0
T1
T3
T2
T4
T5
T6
CK#
CK
CKE
tIS
tIS
VIH(AC)
VIL(AC)
ODT
tAOFPD,max
tAOFPD,min
Internal
Term Res.
RTT
tAONPD,min
tAONPD,max
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Figure 12. ODT timing mode switch at entering power-down mode
T-5
CK#
T-4
T-3
T-2
CK
T-1
tANPD
T0
T1
T2
T3
T4
tIS
CKE
Entering Slow Exit Active Power Down Mode or Precharge Power Down Mode.
ODT
tIS
VIL(ac)
tAOFD
Internal
Term Res.
Active & Standby mode
timings to be applied.
RTT
tIS
ODT
VIL(ac)
Power Down mode
timings to be applied.
tAOFPD max
Internal
Term Res.
RTT
tIS
VIH(ac)
ODT
tAOND
Active & Standby mode
timings to be applied.
RTT
Internal
Term Res.
VIH(ac)
ODT
tIS
tAONPD max
RTT
Internal
Term Res.
Power Down mode
timings to be applied.
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Figure 13.ODT timing mode switch at exit power-down mode
T0
CK#
CK
VIH(ac)
T1
T4
T5
T6
T7
T8
T9
T10
T11
tAXPD
tIS
CKE
Exiting from Slow Active Power Down Mode or Precharge power Down Mode.
tIS
ODT
VIL(ac)
tAOFD
Active & Standby mode
timings to be applied.
Internal
Term Res.
RTT
tIS
ODT
Power Down mode
timings to be applied.
VIL(ac)
tAOFPD max
Internal
Term Res.
RTT
tIS
VIH(ac)
Active & Standby mode
timings to be applied.
ODT
tAOND
RTT
Internal
Term Res.
VIH(ac)
Power Down mode
timings to be applied.
ODT
tIS
tAONPD max
Internal
Term Res.
RTT
Figure 14. Bank activate command cycle (tRCD=3, AL=2, tRP=3, tRRD=2, tCCD=2)
T0
T1
T3
T2
Tn
Tn+1
Tn+2
Tn+3
CK#
CK
Internal RAS# - CAS# delay (>=tRCD min)
ADDRESS
Bank A
Row Addr.
tRCD = 1
Bank A
Col. Addr.
Bank A
Activate
Bank A
Addr.
Bank B
Addr.
Bank A
Row Addr.
Bank A
Precharge
Bank B
Precharge
Bank A
Activate
CAS# - CAS# delay time (tCCD)
Additive latency delay (AL)
Read Begins
RAS# - RAS# delay time (>=tRRD)
COMMAND
Bank B
Col. Addr
Bank B
Row Addr.
Bank A
Post CAS#
Read
Bank B
Activate
Bank B
Post CAS#
Read
Bank precharge time (>=tRP)
Bank Active (>=tRAS)
RAS# Cycle time (>=tRC)
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Figure 15. Posted CAS# operation: AL=2
Read followed by a write to the same bank
-1
0
1
2
Active
A-Bank
Read
A-Bank
3
4
5
6
7
8
9
10
11
12
11
12
CK#
CK
CMD
Write
A-Bank
AL=2
WL=RL-1=4
CL=3
DQS
DQS#
>=tRCD
RL=AL+CL=5
DQ
Dout 0 Dout 1 Dout 2 Dout 3
Din 0
Din 1
Din 2
Din 3
[ AL=2 and CL=3, RL= (AL+CL)=5, WL= (RL-1)=4, BL=4]
Figure 16. Posted CAS# operation: AL=0
Read followed by a write to the same bank
-1
0
1
2
3
4
5
6
7
8
9
10
CK#
CK
AL=0
CMD
Active
A-Bank
Write
A-Bank
Read
A-Bank
CL=3
DQS
DQS#
WL=RL-1=2
>=tRCD
RL=AL+CL=3
DQ
Dout 0 Dout 1 Dout 2 Dout 3
Din 0
Din 1
Din 2
Din 3
[ AL=0 and CL=3, RL= (AL+CL)=3, WL= (RL-1)=2, BL=4]
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Figure 17. Data output (read) timing
CK#
CK
tCH
tCL
CK
DQS
DQS#
DQ
DQS#
DQS
tRPRE
tRPST
tDQSQ max
Q
Q
Q
Q
tDQSQ max
tQH
tQH
Figure 18. Data input (write) timing
tDQSH
DQS#
tDQSL
DQS
DQS#
DQS
tWPRE
DQ
tWPSL
VIH(ac)
D
VIL(ac)
tDS
DM
VIH(dc)
D
D
VIL(dc)
tDH
tDS
DMin
VIL(ac)
tDH
VIH(dc)
VIH(ac)
DMin
D
DMin
DMin
VIL(dc)
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
39
Rev. 1.0
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AS4C128M8D2
Figure 19. Burst read operation: RL=5 (AL=2, CL=3, BL=4)
CK#
CK
CMD
T1
T0
Posted CAS#
READ A
NOP
T2
T3
NOP
T4
NOP
T5
NOP
T6
NOP
T7
NOP
T8
NOP
NOP
=< tDQSCK
DQS
DQS#
AL=2
CL=3
RL=5
DQs
Dout A0
Dout A1
Dout A2
Dout A3
Figure 20. Burst read operation: RL=3 (AL=0, CL=3, BL=8)
CK#
CK
CMD
T0
READ A
T1
NOP
T2
T3
NOP
T4
NOP
T5
NOP
T6
NOP
T7
NOP
T8
NOP
NOP
=< tDQSCK
DQS
DQS#
CL=3
RL=3
DQs
Dout A0
Dout A1
Dout A2
Dout A3
Dout A4
Dout A5
Dout A6
Dout A7
Figure 21. Burst read followed by burst write: RL=5, WL= (RL-1) =4, BL=4
CK#
CK
CMD
T0
Post CAS#
READ A
T1
NOP
Tn-1
NOP
Tn
Tn+1
Post CAS#
WRITE A
Tn+2
NOP
Tn+3
NOP
NOP
Tn+4
Tn+5
NOP
NOP
tRTW (Read to Write turn around time)
DQS
DQS#
RL=5
WL = RL-1 = 4
DQs
Dout A0
Dout A1
Dout A2
Dout A3
Din A0
Din A1
Din A2
Din A3
NOTE : The minimum time from the burst read command to the burst write command is defined by a read-to-writeturn-around-time, which is 4 clocks in case of BL = 4 operation, 6 clocks in case of BL = 8 operation.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
40
Rev. 1.0
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AS4C128M8D2
Figure 22. Seamless burst read operation: RL=5, AL=2, CL=3, BL=4
T1
T0
T2
T3
T4
T5
T6
T7
T8
CK#
CK
Post CAS#
READ A
CMD
DQS
DQS#
NOP
Post CAS#
READ B
NOP
AL=2
NOP
NOP
NOP
NOP
NOP
CL=3
RL=5
DQs
Dout A0
Dout A1
Dout A2
Dout A3
Dout B0
Dout B1
Dout B2
NOTE : The seamless burst read operation is supported by enabling a read command at every other clock for BL =
4 operation, and every 4 clock for BL =8 operation. This operation is allowed regardless of same or different banks
as long as the banks are activated.
Figure 23. Read burst interrupt timing: (CL=3, AL=0, RL=3, BL=8)
CK#
CK
CMD
Read A
NOP
Read B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQS#
DQs
A0
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
NOTE 1: Read burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
NOTE 2: Read burst of 8 can only be interrupted by another Read command. Read burst interruption by Write
command or Precharge command is prohibited.
NOTE 3: Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read burst
interrupt timings are prohibited.
NOTE 4: Read burst interruption is allowed to any bank inside DRAM.
NOTE 5: Read burst with Auto Precharge enabled is not allowed to interrupt.
NOTE 6: Read burst interruption is allowed by another Read with Auto Precharge command.
NOTE 7: All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, Minimum Read to Precharge timing is AL+BL/2 where BL is the burst length set in the
mode register and not the actual burst (which is shorter because of interrupt).
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
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Rev. 1.0
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AS4C128M8D2
Figure 24. Burst write operation: RL=5 (AL=2, CL=3), WL=4, BL=4
CK#
CK
CMD
T0
T1
Posted CAS#
WRITE A
T2
NOP
T3
NOP
T4
NOP
Case 1: with tDQSS (max)
DQS
DQS#
T5
NOP
NOP
tDQSS
tDSS tDQSS
T6
T7
NOP
tDSS
NOP
Precharge
Completion of the
Burst Write
WL = RL-1 =4
>=tWR
DQs
DNA0
Case 2: with tDQSS (min)
DQS
DQS#
Tn
tDQSS tDSH
DNA1
DNA2 DNA3
tDQSS tDSH
>=tWR
WL = RL-1 =4
DQs
DNA0
DNA1
DNA2 DNA3
Figure 25. Burst write operation: RL=3 (AL=0, CL=3), WL=2, BL=4
T0
T1
T2
T3
T4
T5
Tm
Tm+1
Tn
CK#
CK
CMD
WRITE A
NOP
NOP
NOP
<=tDQSS
DQS
DQS#
NOP
Precharge
>=tWR
DNA0
DNA1
NOP
Bank A
Activate
Completion of the
Burst Write
WL = RL-1 =2
DQs
NOP
>=tRP
DNA2 DNA3
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
42
Rev. 1.0
June 2013
AS4C128M8D2
Figure 26. Burst write followed by burst read:
RL=5 (AL=2, CL=3, WL=4, tWTR=2, BL=4)
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CK
Write to Read = CL-1+BL/2+tWTR
CKE
DQS
DQS#
NOP
NOP
NOP
Post CAS#
READ A
NOP
NOP
NOP
NOP
NOP
DQS#
DQS
WL = RL-1 = 4
AL=2
CL=3
RL=5
>=tWTR
DQ
DNA0
DNA1
DNA2 DNA3
DOUT A0
NOTE : The minimum number of clock from the burst write command to the burst read command is [CL-1 + BL/2 + tWTR].
This tWTR is not a write recovery time (tWR) but the time required to transfer the 4 bit write data from the input buffer into
sense amplifiers in the array. tWTR is defined in the timing parameter table of this standard.
Figure 27. Seamless burst write operation RL=5, WL=4, BL=4
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK
CMD
DQS
DQS#
Post CAS#
Write A
NOP
Post CAS#
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DQS#
DQS
WL = RL-1 = 4
DQ
DNA0
DNA1
DNA2 DNA3 DNB0
DNB1
DNB2 DNB3
NOTE : The seamless burst write operation is supported by enabling a write command every other clock for
BL= 4 operation, every four clocks for BL = 8 operation. This operation is allowed regardless of same or
different banks as long as the banks are activated.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
43
Rev. 1.0
June 2013
AS4C128M8D2
Figure 28. Write burst interrupt timing: (CL=3, AL=0, RL=3, WL=2, BL=8)
CK#
CK
CMD
NOP
Write A
NOP
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQS#
DQs
A0
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
NOTE 1: Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
NOTE 2: Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read command or
Precharge command is prohibited.
NOTE 3: Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write burst interrupt
timings are prohibited.
NOTE 4: Write burst interruption is allowed to any bank inside DRAM.
NOTE 5: Write burst with Auto Precharge enabled is not allowed to interrupt.
NOTE 6: Write burst interruption is allowed by another Write with Auto Precharge command.
NOTE 7: All command timings are referenced to burst length set in the mode register. They are not referenced to actual
burst. For example, minimum Write to Precharge timing is WL + BL/2 + tWR where tWR starts with the rising clock after the
uninterrupted burst end and not from the end of actual burst end.
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
44
Rev. 1.0
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AS4C128M8D2
Figure 29. Write data mask
Data Mask Timing
DQS
DQS#
DQ
VIH(ac)VIH(dc)
DM
Data Mask Function, WL=3, AL=0, BL=4 shown
VIH(ac)VIH(dc)
VIL(ac)VIL(dc)
VIL(ac)VIL(dc)
tDS tDH
tDS tDH
Case 1: min tDQSS
CK#
CK
tWR
COMMAND
Write
WL
tDQSS
DQS
DQS#
DQ
DM
Case 2: max tDQSS
tDQSS
DQS
DQS#
DQ
DM
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
45
Rev. 1.0
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AS4C128M8D2
Figure 30. Burst read operation followed by precharge:
(RL=4, AL=1, CL=3, BL=4, tRTP ≦2 clocks)
T0
CK#
T1
T2
T3
T4
T5
T6
T7
T8
CK
Post CAS#
Read A
CMD
NOP
NOP
NOP
Precharge
NOP
Bank A
Active
NOP
NOP
AL+BL'/2 clks
DQS
DQS#
AL=1
CL=3
>=tRP
RL=4
DQ
DOUTA0 DOUTA1 DOUTA2 DOUTA3
>=tRAS
>=tRTP
CL=3
Figure 31. Burst read operation followed by precharge:
(RL=4, AL=1, CL=3, BL=8, tRTP≦2 clocks)
CK#
CK
CMD
DQS
DQS#
T0
T1
Post CAS#
READ A
T2
NOP
T3
NOP
T4
NOP
NOP
T5
T6
T7
NOP
Precharge A
T8
NOP
NOP
AL + BL/2 clks
AL = 1
CL = 3
RL= 4
DQ's
DOUT
A0
DOUT
A1
DOUT
A2
DOUT
A3
DOUT
A4
DOUT
A5
DOUT
A6
DOUT
A7
>=tRTP
First 4-bit prefetch
Second 4-bit prefetch
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
46
Rev. 1.0
June 2013
AS4C128M8D2
Figure 32. Burst read operation followed by precharge:
(RL=5, AL=2, CL=3, BL=4, tRTP≦2 clocks)
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK
CMD
Post CAS#
READ A
NOP
NOP
NOP
NOP
Precharge A
NOP
Bank A
Activate
NOP
AL + BL/2 clks
DQS
DQS#
AL = 2
CL = 3
>=tRP
RL= 5
DOUT
A0
DQ's
>=tRAS
DOUT
A1
DOUT
A2
DOUT
A3
CL = 3
>=tRTP
Figure 33. Burst read operation followed by precharge:
(RL=6, AL=2, CL=4, BL=4, tRTP≦2 clocks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK#
CK
CMD
Post CAS#
READ A
NOP
NOP
NOP
Precharge A
NOP
NOP
Bank A
Activate
NOP
AL + BL/2 clks
DQS
DQS#
AL = 2
CL = 4
>=tRP
RL= 6
DOUT
A0
DQ's
>=tRAS
DOUT
A1
DOUT
A2
DOUT
A3
CL = 4
>=tRTP
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
47
Rev. 1.0
June 2013
AS4C128M8D2
Figure 34. Burst read operation followed by precharge:
(RL=4, AL=0, CL=4, BL=8, tRTP>2 clocks)
T0
CK#
T1
T2
T3
T4
T5
T6
T7
T8
CK
Post CAS#
READ A
CMD
NOP
NOP
NOP
NOP
NOP
Precharge A
NOP
Bank A
Activate
AL + 2 + max( tRTP, 2 tCK)*
DQS
DQS#
CL = 4
AL = 0
>=tRP
RL= 4
DQ's
DOUT
A0
>=tRAS
DOUT
A1
DOUT
A2
DOUT
A3
DOUT
A4
DOUT
A5
DOUT
A6
DOUT
A7
>=tRTP
First 4-bit prefetch
Second 4-bit prefetch
*: rounded to next integer.
Figure 35. Burst write operation followed by precharge: WL= (RL-1) =3
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK
CMD
Post CAS#
Write A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge A
Completion of the Burst Write
DQS
DQS#
>=tWR
WL= 3
DQ's
DNA0
DNA1
DNA2 DNA3
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
48
Rev. 1.0
June 2013
AS4C128M8D2
Figure 36. Burst write followed by precharge: WL= (RL-1) =4
CK#
T0
T1
T2
T3
T4
T5
T6
T7
T9
CK
CMD
Post CAS#
Write A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge A
Completion of the Burst Write
>=tWR
DQS
DQS#
WL= 4
DQ's
DNA0
DNA1
DNA2 DNA3
Figure 37. Burst read operation with auto precharge:
(RL=4,AL=1, CL=3, BL=8, tRTP≦2 clocks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK#
CK
CMD
Post CAS#
READ A
Autoprecharge
DQS
DQS#
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
>= tRP
AL + BL/2 clks
CL = 3
AL = 1
RL= 4
DQ's
>=tRTP
tRTP
First 4-bit prefetch
Second 4-bit prefetch
DOUT
A0
DOUT
A1
DOUT
A2
DOUT
A3
DOUT
A4
DOUT
A5
DOUT
A6
DOUT
A7
Precharge begins here
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
49
Rev. 1.0
June 2013
AS4C128M8D2
Figure 38. Burst read operation with auto precharge:
(RL=4, AL=1, CL=3, BL=4, tRTP>2 clocks)
T0
CK#
CK
T1
Post CAS#
READ A
CMD
T2
NOP
NOP
T4
NOP
NOP
T5
T6
NOP
NOP
T7
Bank A
Activate
T8
NOP
>= AL+tRTP+tRP
Autoprecharge
DQS
DQS#
T3
AL= 1
CL= 3
RL= 4
DQ's
DoutA0 DoutA1 DoutA2 DoutA3
tRTP
tRP
First 4-bit prefetch
Precharge begins here
Figure 39. Burst read operation with auto precharge followed by activation to the same bank (tRC
Limit): RL=5(AL=2, CL=3, internal tRCD=3, BL=4, tRTP≦2 clocks)
CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
A10= 1
CMD
Post CAS#
READ A
DQS
DQS#
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
>=tRAS(min) Auto Precharge Begins
AL= 2
CL= 3
>=tRP
RL= 5
DQ's
DoutA0 DoutA1 DoutA2 DoutA3
CL=3
>= tRC
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
50
Rev. 1.0
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AS4C128M8D2
Figure 40. Burst read operation with auto precharge followed by an activation to the same bank (tRP
Limit): (RL=5 (AL=2, CL=3, internal tRCD=3, BL=4, tRTP≦2 clocks)
T0
CK#
CK
T1
T2
T4
T3
T5
T6
T7
T8
A10= 1
CMD
Post CAS#
READ A
NOP
NOP
NOP
>=tRAS(min)
NOP
NOP
Bank A
Activate
NOP
NOP
Auto Precharge Begins
DQS
DQS#
AL= 2
>= tRP
CL= 3
RL= 5
DQ's
DoutA0 DoutA1 DoutA2 DoutA3
CL=3
>= tRC
Figure 41. Burst write with auto-precharge (tRC Limit): WL=2, WR=2, BL=4, tRP=3
CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
Tm
A10 = 1
CMD
Post CAS#
WRA Bank A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Active
Completion of the Burst Write
DQS
DQS#
Auto Precharge Begins
>=WR
WL= RL-1=2
DQ's
DNA0
DNA1
>=tRP
DNA2 DNA3
>=tRC
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
51
Rev. 1.0
June 2013
AS4C128M8D2
Figure 42. Burst write with auto-precharge (WR+tRP): WL=4, WR=2, BL=4, tRP=3
T0
T3
T4
T5
T6
T7
T8
T9
T12
CK#
CK
A10=1
CMD
Post CAS#
WRA Bank A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Active
Completion of the Burst Write
Auto Precharge Begins
DQS
DQS#
>=WR
>=tRP
WL= RL-1=4
DQ's
DNA0
DNA1
DNA2 DNA3
>=tRC
Figure 43. Refresh command
T0
T1
T2
T3
Tm
Tn
Tn+1
CK#
CK
HIGH
CKE
CMD
>=tRP
Precharge
NOP
>=tRFC
NOP
REF
>=tRFC
REF
NOP
ANY
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
52
Rev. 1.0
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AS4C128M8D2
Figure 44. Self refresh operation
T0
CK#
tCH
tCK
T1
T2
T3
T4
T5
T6
Tm
Tn
tCL
CK
>=tXSNR
tRP*
>=tXSRD
CKE
VIH(ac)
VIL(ac)
tAOFD
ODT
tIS
tIS
VIL(ac)
tIS
tIS tIH tIH
tIS
VIH(ac)
Self VIH(dc)
VIL(ac) Refresh VIL(dc)
CMD
tIH
NOP
NOP
NOP
Valid
NOTE 1 Device must be in the "All banks idle" state prior to entering Self Refresh mode.
NOTE 2 ODT must be turned off tAOFD before entering Self Refresh mode, and can be
turned on again when tXSRD timing is satisfied.
NOTE 3 tXSRD is applied for Read or a Read with autoprecharge command.
tXSNR is applied for any command except a Read or a Read with autoprecharge command.
Figure 45. Basic power down entry and exit timing diagram
CK
CK#
CKE
Command
tIH
VALID
tIS
tIH
NOP
tIS
NOP
NOP
tCKE min
tIH
tIS tIH
VALID
VALID
or NOP
tXP, tXARD
tXARDS
Exit Power-Down mode
Enter Power-Down mode
tCKE(min)
Don't Care
Figure 46. CKE intensive environment
CK#
CK
tCKE
tCKE
CKE
tCKE
tCKE
NOTE: DRAM guarantees all AC and DC timing & voltage specifications and proper DLL operation with intensive CKE operation
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
53
Rev. 1.0
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AS4C128M8D2
Figure 47. CKE intensive environment
CK#
CK
CKE
tCKE
tCKE
tCKE
tXP
CMD
tCKE
tXP
REF
REF
tREFI
NOTE: The pattern shown above can repeat over a long period of time. With this pattern, DRAM guarantees all AC and DC timing & voltage
specifications and DLL operation with temperature and voltage drift
Figure 48. Read to power-down entry
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
Tx+8
Tx+9
CK#
CK
CMD
Read operation starts with a read command and
RD
CKE should be kept HIGH until the end of burst operation
BL=4
CKE
AL+CL
Q
DQ
Q
Q
tIS
Q
DQS
DQS#
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
CK#
CK
CMD
RD
CKE should be kept HIGH until the end of burst operation
BL=8
CKE
AL+CL
Q
DQ
Q
Q
Q
Q
Q
Q
Q
tIS
DQS
DQS#
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
54
Rev. 1.0
June 2013
AS4C128M8D2
Figure 49. Read with autoprecharge to power-down entry
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
Tx+8
Tx+9
CK#
CK
CMD
RDA
PRE
BL=4
CKE should be kept HIGH until the end of burst operation
AL+BL/2 with tRTP = 7.5ns
& tRAS min satisfied
CKE
AL+CL
Q
DQ
Q
Q
tIS
Q
DQS
DQS#
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
CK#
CK
Start internal precharge
CMD
RD
PRE
BL=8
CKE should be kept HIGH until the end of burst operation
AL+BL/2 with tRTP = 7.5ns
& tRAS min satisfied
CKE
AL+CL
Q
DQ
Q
Q
Q
Q
Q
Q
tIS
Q
DQS
DQS#
Figure 50. Write to power-down entry
CK#
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tx
Tx+1
Tx+2
Ty
Ty+1
Ty+2
Ty+3
Tx
Tx+1
Tx+2
Tx+3
Tx+4
CK
CMD
WR
BL=4
CKE
WL
Q
DQ
Q
Q
tIS
Q
tWTR
DQS
DQS#
CK#
T0
T1
Tm+1
Tm
Tm+3
Tm+2
Tm+4
Tm+5
CK
CMD
WR
BL=8
CKE
WL
DQ
Q
Q
Q
Q
Q
Q
Q
tIS
Q
tWTR
DQS
DQS#
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
55
Rev. 1.0
June 2013
AS4C128M8D2
Figure 51. Write with autoprecharge to power-down entry
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+1
Tx+2
Tx+3
Tx+4
CK#
CK
CMD
PRE
WRA
BL=4
CKE
WL
Q
DQ
Q
Q
tIS
Q
WR*1
DQS
DQS#
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tm+4
Tm+5
Tx
CK#
CK
Start internal Precharge
CMD
WRA
PRE
BL=8
CKE
WL
DQ
Q
Q
Q
Q
Q
Q
Q
tIS
Q
WR*1
DQS
DQS#
*1: WR is programmed through MRS
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
56
Rev. 1.0
June 2013
AS4C128M8D2
Figure 52. Refresh command to power-down entry
T0
T1
T3
T2
T4
T5
T6
T7
T8
T9
T10
T11
T8
T9
T10
T11
CK#
CK
CMD
REF
CKE can go to LOW one clock after an Auto-refresh command
CKE
tIS
Figure 53. Active command to power-down entry
T0
CMD
T1
T2
T3
T4
T5
T6
T7
ACT
CKE can go to LOW one clock after an Active command
CKE
tIS
Figure 54. Precharge/precharge-all command to power-down entry
T0
CMD
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
PR or PRA
CKE can go to LOW one clock after a Precharge or Precharge all command
CKE
tIS
Figure 55. MRS/EMRS command to power-down entry
T0
CMD
T1
MRS or
EMRS
T3
T2
T4
T5
T6
T7
T8
T9
T10
T11
tMRD
CKE
tIS
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
57
Rev. 1.0
June 2013
AS4C128M8D2
Figure 56. Asynchronous CKE LOW event
Stable clocks
tCK
CK#
CK
CKE
tDelay
CKE asynchronously drops LOW
tIS
Clocks can be turned off after this point
Figure 57. Clock frequency change in precharge power down mode
CK#
CK
T0
CMD
T1
T2
NOP
NOP
T4
Tx
Tx+1
Ty
Ty+1
Ty+2
Ty+3
NOP
NOP
Ty+4
DLL
RESET
Tz
NOP
Valid
Frequency Change Occurs here
CKE
ODT
tIS
200 Clocks
tIS
tXP
tRP
tAOFD
Minimum 2 clocks required before
changing frequency
Stable new clock before power
down exit
tIH
ODT is off during DLL RESET
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
58
Rev. 1.0
June 2013
AS4C128M8D2
Figure 58. 60-Ball FBGA Package Outline Drawing Information
PIN A1 INDEX
Top View
Bottom View
Side View
DETAIL : "A"
Symbol
Dimension in inch
Min
Nom
Max
Dimension in mm
Min
Nom
Max
A
--
--
0.047
--
--
1.20
A1
D
E
D1
E1
F
e
b
D2
0.010
--
0.016
0.25
--
0.40
0.311
0.315
0.319
7.90
8.00
8.10
0.340
0.394
0.0.398
9.90
10.00
10.10
--
0.252
--
--
6.40
--
--
0.315
--
--
8.00
--
--
0.126
--
--
3.20
--
--
0.031
--
--
0.80
--
0.016
0.018
0.020
0.40
0.45
0.50
--
--
0.081
--
--
2.05
Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
59
Rev. 1.0
June 2013