INCHANGE Semiconductor isc Silicon NPN Power Transistor BD827 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD828 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICP Collector Current-Peak 1.5 A PC TJ Tstg Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 10 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BD827 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 2V 1.0 V VCB= 30V; IE= 0 0.1 ICBO CONDITIONS MIN MAX 60 uA VCB= 30V; IE= 0; TC= 125℃ 10 10 Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5mA ; VCE= 2V 25 hFE-2 DC Current Gain IC= 150mA ; VCE= 2V 40 hFE-3 DC Current Gain IC= 500mA ; VCE= 2V 25 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V isc website：www.iscsemi.com UNIT V Collector Cutoff Current IEBO fT TYP. 2 uA 250 250 MHz isc & iscsemi is registered trademark