DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES • High forward transfer admittance d handbook, halfpage • Short channel transistor with high forward transfer admittance to input capacitance ratio 4 3 g2 • Low noise gain controlled amplifier up to 1 GHz. g1 APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. 1 2 s,b Top view MAM039 DESCRIPTION Fig.1 Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Simplified outline (SOT143) and symbol; BF908. d handbook, halfpage 3 CAUTION 4 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. g2 g1 PINNING 2 PIN SYMBOL 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 1 s,b DESCRIPTION Top view MAM040 source Fig.2 Simplified outline (SOT143R) and symbol; BF908R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 12 V ID drain current − − 40 mA Ptot total power dissipation − − 200 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 pF F noise figure f = 800 MHz − 1.5 2.5 dB 1996 Jul 30 2 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 40 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation see Fig.3; note 1 BF908 up to Tamb = 50 °C − 200 mW BF908R up to Tamb = 40 °C − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board. MRC275 250 handbook, halfpage P tot (mW) 200 BF908 150 BF908R 100 50 0 0 50 100 150 200 o Tamb ( C) Fig.3 Power derating curves. 1996 Jul 30 3 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT BF908 500 K/W BF908R 550 K/W thermal resistance from junction to ambient note 1 Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8 − 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8 − 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 µA − − 2 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 4 V; VDS = 8 V; ID = 20 µA − − 1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3 15 27 mA ±IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V − − 50 nA ±IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V − − 50 nA MAX. UNIT DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. yfs forward transfer admittance pulsed; Tj = 25 °C; f = 1 MHz 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF Cos output capacitance f = 1 MHz 1.2 1.7 2.2 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt − 0.6 1.2 dB f = 800 MHz; GS = GSopt; BS = BSopt − 1.5 2.5 dB 1996 Jul 30 4 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R MRC282 MRC281 40 handbook, halfpage 30 handbook, halfpage VG2-S = 4 V ID (mA) ID (mA) 3V 30 VG1-S = 0.3 V 0.2 V 2V 20 0.1 V 1.5 V 1V 20 0V 0.5 V 10 −0.1 V 10 −0.2 V −0.3 V 0V 0 −0.6 −0.4 0 −0.2 0 0.2 0.4 0 0.6 4 8 12 16 VDS (V) VG1-S (V) VDS = 8 V; Tj = 25 °C. VG2-S = 4 V; Tj = 25 °C. Fig.4 Transfer characteristics; typical values. Fig.5 Output characteristics; typical values. MRC280 50 Yfs (mS) 40 MRC276 60 4V 3V 2V Yfs (mS) 1.5 V 40 30 1V 20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 40 25 I D (mA) VDS = 8 V; Tj = 25 °C. Fig.6 1996 Jul 30 0 40 80 120 160 T j (o C) VDS = 8 V; VG2-S = 4 V; ID = 15 mA. Forward transfer admittance as a function of drain current; typical values. Fig.7 5 Forward transfer admittance as a function of junction temperature; typical values. Philips Semiconductors Product specification Dual-gate MOS-FETs Table 1 f (MHz) BF908; BF908R Scattering parameters s11 MAGNITUDE (ratio) s21 ANGLE (deg) MAGNITUDE (ratio) s12 ANGLE (deg) MAGNITUDE (ratio) s22 ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 50 0.998 −5.1 3.537 173.5 0.001 98.2 0.996 −2.4 100 0.994 −10.4 3.502 167.7 0.001 88.8 0.994 −4.9 200 0.979 −20.8 3.450 154.9 0.003 74.6 0.987 −9.5 300 0.962 −30.3 3.318 143.7 0.004 69.5 0.983 −13.9 400 0.939 −40.1 3.234 131.9 0.005 65.6 0.980 −18.5 500 0.914 −49.1 3.093 120.7 0.006 64.4 0.974 −22.8 600 0.892 −57.1 2.912 111.1 0.005 63.1 0.969 −27.0 700 0.865 −64.4 2.774 101.0 0.005 65.2 0.966 −31.2 800 0.837 −71.6 2.616 91.4 0.004 70.8 0.965 −35.4 900 0.811 −78.1 2.479 81.9 0.004 87.4 0.965 −39.4 1000 0.785 −84.5 3.329 72.5 0.003 108.0 0.966 −43.7 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 50 0.998 −5.3 3.983 173.4 0.001 95.5 0.994 −2.4 100 0.994 −10.9 3.943 167.5 0.001 93.6 0.991 −5.0 200 0.976 −21.6 3.878 154.7 0.003 74.3 0.984 −9.7 300 0.957 −31.7 3.722 143.3 0.004 70.0 0.979 −14.2 400 0.934 −41.7 3.614 131.6 0.005 63.5 0.975 −18.8 500 0.907 −51.1 3.446 120.4 0.006 62.2 0.969 −23.2 600 0.885 −59.1 3.240 110.9 0.005 59.6 0.964 −27.4 700 0.851 −66.8 3.072 100.9 0.005 64.8 0.961 −31.6 800 0.826 −73.9 2.891 91.3 0.004 67.8 0.959 −35.9 900 0.797 −80.7 2.733 81.9 0.004 85.0 0.958 −40.0 1000 0.773 −87.0 2.569 72.8 0.004 102.9 0.958 −44.2 Table 2 Noise data f (MHz) Fmin (dB) Γopt rn (ratio) (deg) 0.720 56.7 0.580 0.700 59.2 0.520 VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C. 800 1.50 VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. 800 1996 Jul 30 1.50 6 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R PACKAGE OUTLINES handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 2.5 max 1.4 1.2 o 10 max 1 1.1 max o 30 max 2 0 0.1 0.88 0.48 0.1 M A B 0 0.1 MBC845 1.7 TOP VIEW Dimensions in mm. Fig.8 SOT143. 3.0 2.8 handbook, full pagewidth 0.150 0.090 0.40 0.25 B 1.9 3 4 0.1 max o 10 max 0.2 M A A 1.4 1.2 o 2.5 max 10 max 2 1.1 max o 30 max 1 0.48 0.38 0.88 0.78 1.7 0.1 M B TOP VIEW Dimensions in mm. Fig.9 SOT143R. 1996 Jul 30 7 MBC844 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 8