Fairchild FDR6674A 30v n-channel powertrench mosfet Datasheet

FDR6674A
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
RDS(ON) = 8.5 mΩ @ VGS = 10 V
Applications
• High power and current handling capability in a
smaller footprint than SO8
• High performance trench technology for extremely
low RDS(ON)
• Synchronous rectifier
• DC/DC converter
D
D
S
S
D
TM
SuperSOT -8
D
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
3
7
2
8
1
Ratings
Units
30
V
±12
V
11.5
A
50
Power Dissipation for Single Operation
(Note 1a)
1.8
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
6
TA=25oC unless otherwise noted
Parameter
VDSS
PD
4
D
Absolute Maximum Ratings
Symbol
G
5
W
0.9
-55 to +150
°C
(Note 1a)
70
°C/W
(Note 1)
20
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.6674A
FDR6674A
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDR6674A Rev D(W)
FDR6674A
April 2001
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
VGS = 0 V, ID = 250 µA
30
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V , VDS = 0 V
–100
nA
2
V
On Characteristics
ID = 250 µA, Referenced to 25°C
23
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = 4.5 V,
VGS = 4.5 V,
VGS = 10 V,
VGS = 4.5 V,
gFS
Forward Transconductance
VDS = 10 V,
ID = 10.5 A
ID = 10.5 A, TJ 125°C
ID = 11.5 A
VDS = 5 V
ID = 11.5 A
0.8
1.2
-4
8.2
11.5
6.8
mV/°C
9.5
16
8
50
mΩ
A
75
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
5070
pF
550
pF
230
pF
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
17
25
ns
18
25
ns
Turn–Off Delay Time
69
100
ns
tf
Turn–Off Fall Time
29
42
ns
Qg
Total Gate Charge
33
46
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V, ID = 11.5 A,
VGS = 4.5V
7.5
nC
6.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
(Note 2)
0.7
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 70°/W when
mounted on a 1in2
pad of 2 oz copper
b) 125°/W when
2
mounted on a .04 in
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDR6674A Rev D(W)
FDR6674A
Electrical Characteristics
FDR6674A
Typical Characteristics
50
1.5
VGS = 4.5V
3.5V
3.0V
40
VGS = 2.5V
2.5V
1.3
30
2.0V
3.0V
20
1.1
3.5V
4.0V
4.5V
10
0.9
0
0
0.5
1
0
1.5
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
1.8
ID = 5.8 A
ID = 11.5A
VGS = 10V
1.6
0.02
1.4
1.2
0.015
o
TA = 125 C
1
0.01
0.8
o
TA = 25 C
0.6
0.005
-50
-25
0
25
50
75
100
125
150
1
2.5
o
TJ, JUNCTION TEMPERATURE ( C)
4
5.5
7
8.5
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
VGS = 0V
VDS = 5V
10
o
45
TA = 125 C
1
o
25 C
30
o
-55 C
0.1
o
o
TA = 125 C
25 C
15
0.01
o
-55 C
0.001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDR6674A Rev D(W)
FDR6674A
Typical Characteristics
5
8000
VDS = 5V
ID = 11.5A
4
f = 1MHz
VGS = 0 V
7000
10V
15V
6000
CISS
5000
3
4000
2
3000
2000
1
1000
COSS
CRSS
0
0
0
10
20
30
40
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT
100µs
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
1ms
10
10ms
100ms
30
1s
10s
DC
1
20
VGS = 10V
SINGLE PULSE
0.1
10
o
RθJA = 135 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDR6674A Rev D(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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