Seme LAB BDX14AA Pnp silicon transistor, epitaxial base Datasheet

BDX14AA
PNP
SILICON TRANSISTOR,
EPITAXIAL BASE
MECHANICAL DATA
Dimensions in mm
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
0.71 (0.028)
0.86 (0.034)
3.61 (0.142)
3.86 (0.145)
rad.
14.48 (0.570)
14.99 (0.590)
24.33 (0.958)
24.43 (0.962)
3.68
(0.145) rad.
max.
FEATURES:
• LF Large Signal Power Amplification
• Medium Current Switching
1.27 (0.050)
1.91 (0.750)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
TO66 Package.
Pin 1 – Base
Pin 2 – Emitter
Case - Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (Open Emitter)
- 90V
VCEO
Collector – Emitter Voltage (Open Base)
- 55V
VCER
Collector – Emitter Voltage
RBE =100W
- 60V
VCEX
Collector – Base Voltage
VBE = +1.5V
- 90V
VEBO
Emitter – Base Voltage
-7V
IC
Collector Current
-4V
IB
Base Current
-2V
Ptot
Power Dissipation
29W
TJ
Maximum Junction Temperature
TSTG
Storage Temperature
Rth-(j-c)
Junction to Case.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
200°C
–65 to 200°C
6°C / W
Prelim. 02/00
BDX14AA
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
ICEX
Collector Emitter Cut Off Current
Test Conditions
VCE = -90V
VBE = +1.5V
VCE = -30V
VBE = +1.5V
Min.
Max.
Unit
-1
-5
Tcase = 150°C
IB = 0
Typ.
VCEO(SUS)* Collector Emitter Breakdown Voltage
IC = -100mA
-55
VCER(SUS)* Collector Emitter Breakdown Voltage
IC = -100mA
RBE = 100W
V(BR)EBO*
Emitter Base Breakdown Voltage
IE = -1A
IC =0
-7
h21E*
Static Forward Current Transfer Ratio VCE = - 4V
IC = - 0.5A
25
VCE(sat)*
Collector Emitter Saturation Voltage
IC = - 0.5A
VBE*
Base Emitter Voltage
fT
Transition Frequency
mA
V
-60
V
250
—
IB = - 0.05A
-1
V
VCE = - 4V
IC = - 0.5A
-1.7
V
VCB = -10V
IC = - 0.2A
f = 1MHz
4
MHz
* Pulse test tp = 300ms , d < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 02/00
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