WILLAS FM120-M+ THRU BAV99DW FM1200-M+ SOT-363 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diode RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • BatchDIODE SWITCHING SOT-363 better reverse leakage current and thermal resistance. SOD-123H FEATURES • Low profile surface mounted application in order to optimize board space. z Fast Switching Speed • Low power loss, high efficiency. z Ultra-Small Package capability,Mount low forward voltage drop. • High currentSurface High surge capability. • z For General Purpose Switching Applications • Guardring for overvoltage protection. z High high-speed switching. • UltraConductance z Pb-Free package is available planar chip, metal silicon junction. • Silicon epitaxial Lead-free parts meet environmental standards • RoHS product for packing code suffix ”G” of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product forcode packing code suffix “H” for packing suffix "G" • RoHS product z Moisture Sensitivity 1 code suffix "H" Halogen free product forLevel packing Mechanical data MAKING: KJG • Epoxy : UL94-V0 rated flame retardant Maximum Ratings @TA=25℃ • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Parameter 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Symbol Method 2026 Peak Repetitive Peak reverse voltage • Polarity : Indicated by cathode band Working Peak Reverse Voltage Position : Any • MountingVoltage DC Blocking VRRM VRWM VR • Weight : Approximated Forward Continuous Current 0.011 gram Limits Dimensions in inches and (millimeters) IFM IO Average Rectified Output Current MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.@ t = 1.0µs Non-Repetitive Peak Forward Surge Current Single phase half wave, 60Hz, resistive of inductive load. @ t = 1.0s For capacitive load, derate current by 20% Power Dissipation RATINGS Operating Junction Maximum RMS Voltage Temperature Maximum DC Blocking Voltage Storage temperature VRRM superimposed on rated load (JEDEC method) Typical ThermalParameter Resistance (Note 2) 12 20 150 mA 13 30 14 RθJA 15 40 50 TJ 35 150 56 42 60-55-150 80 14 21 28 VDC 20 30 40 TSTG50 A 16 625 18 60 80 IO IFSM Symbol R ΘJA CJ ReverseTemperature breakdown voltage Operating Range VJ(BR) R T Storage Temperature Range TSTG Reverse voltage leakage current CHARACTERISTICS IR 70 ℃ 100 ℃ Test conditions 120 75 - 65 to +175 VR=75V 120 200 Vo 105 140 Vo 150 200 Vo Am 30 MIN 40 -55 to +125 IR= 2.5µA 115 150 Am MAX UNIT ℃/ P -55 to +150 2.5 ℃ V ℃ µA FM1100-MH FM1150-MH FM1200-MH UN 0.025 VFM140-MH SYMBOL FM120-MH FM130-MH R=20V FM150-MH FM160-MH FM180-MH VF Maximum Forward Voltage at 1.0A DC 10℃/W 100 1.0 Typical Junction Capacitance (Note 1) Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 I =1mA F IR VF NOTES: 1-Junction Measured atcapacitance 1 MHZ and applied reverse voltage of 4.0 VDC. CT 2- Thermal Resistance From Junction to Ambient 2012-1 mA 1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Peak Forward Surge Current 8.3 ms single half sine-wave 2012-06 300 2 IFSM VRMS Maximum Average Forward Rectified Current Reveres recovery time V 200 Maximum Recurrent Peak Reverse Voltage Forward voltage 75 mW FM1150-MH FM1200-MH UN PD FM160-MH FM180-MH FM1100-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Marking Code Thermal Resistance Junction to Ambient Air Rated DC Blocking Voltage Unit trr IF=10mA IF=50mA IF=150mA VR=0, f=1MHz IF=IR=10mA,Irr=0.1×IR, RL=100Ω 0.70 0.5 10 0.85 715 855 1000 1250 0.9 0.92 mV 2 pF 4 nS Vo mA WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAV99DWTHRU FM1200-M+ SOT-363 Plastic-Encapsulate Diode 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Typical Characteristics 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V IO 1.0 A IFSM 30 A RΘJA 40 120 ℃ Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAV99DWTHRU FM1200-M+ SOT-363 Plastic-Encapsulate Diode 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-363 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .071(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .071(1.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .030(0.75) .021(0.55) RATINGS Marking Code .010(0.25) 18 10 .003(0.08) 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 .056(1.40) Maximum Average Forward Rectified Current .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 140 Vo 100 150 200 Vo 30 Am RΘJA 40 120 -55 to +125 ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ IR .016(0.40) .004(0.10) @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .043(1.10) .032(0.80) VF Maximum Forward Voltage at 1.0A DC NOTES: 105 IFSM TJ Rated DC Blocking Voltage Vo 70 Am Operating Temperature Range CHARACTERISTICS 120 200 1.0 CJ Storage Temperature Range 115 150 IO Typical Junction Capacitance (Note 1) .004(0.10)MAX. 0.012(0.3) Typ. 0.70 0.85 0.9 0.92 0.5 10 Vo mA 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP.