AP80N30W Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic 300V RDS(ON) 66mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 36A S Description AP80N30 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. G D TO-3P S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) . Parameter Symbol Rating Units VDS Drain-Source Voltage 300 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Drain Current, VGS @ 10V 36 A 144 A 208 W 45 mJ -55 to 150 ℃ 150 ℃ 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range TJ Operating Junction Temperature Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.6 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W Data and specifications subject to change without notice 1 201502254 AP80N30W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 300 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 66 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 3 - 4.5 V gfs Forward Transconductance VDS=10V, ID=30A - 56 - S IDSS Drain-Source Leakage Current VDS=240V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +30V, VDS=0V - - +0.1 uA Qg Total Gate Charge ID=30A - 117 180 nC Qgs Gate-Source Charge VDS=240V - 28 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 42 - nC td(on) Turn-on Delay Time VDS=150V - 40 - ns tr Rise Time ID=30A - 90 - ns td(off) Turn-off Delay Time RG=10Ω - 165 - ns tf Fall Time VGS=10V - 95 - ns Ciss Input Capacitance VGS=0V - 5700 9120 pF Coss Output Capacitance VDS=30V - 525 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 . Test Conditions Max. Units VSD Forward On Voltage IS=30A, VGS=0V - - 1.5 V trr Reverse Recovery Time IS=12A, VGS=0V - 310 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.5 - µC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Starting Tj=25oC , VDD=50V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP80N30W 60 120 10V 9.0V 8.0V 7.0V T C =25 C ID , Drain Current (A) 100 10V 9.0V 8.0V 7.0V o T C =150 C 50 ID , Drain Current (A) o 80 60 40 40 V G =5.0V 30 20 V G =5.0V 10 20 0 0 0.0 4.0 8.0 12.0 0.0 16.0 4.0 8.0 12.0 16.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.8 I D =30A V G =10V T C =25 o C I D =30A RDS(ON) (mΩ) 60 . Normalized RDS(ON) 2.3 65 1.8 1.3 55 0.8 50 0.3 4 5 6 7 8 9 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 1.4 1.2 T j =150 o C 20 Normalized VGS(th) IS(A) 30 T j =25 o C 1 0.8 10 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP80N30W f=1.0MHz 12 8000 I D =30A V DS =240V 6000 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 4000 4 2000 2 C oss C rss 0 0 0 40 80 120 1 160 6 Fig 7. Gate Charge Characteristics 16 21 26 31 36 Fig 8. Typical Capacitance Characteristics 1 100us 100 Operation in this area limited by RDS(ON) 1ms . 10 10ms 100ms 1 DC T c =25 o C Single Pulse Normalized Thermal Response (Rthjc) 1000 ID (A) 11 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.001 0.1 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP80N30W MARKING INFORMATION Part Number Package Code 80N30W YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5