CHENMKO ENTERPRISE CO.,LTD CHM2313QPT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (1) (6) 0.95 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (3) * P-Channel Enhancement (4) 0.25~0.5 1.4~1.8 0.935~1.3 0.08~0.2 CIRCUIT 6 1 D D D S G D Absolute Maximum Ratings Symbol 0~0.15 0.3~0.6 4 2.6~3.0 3 Dimensions in millimeters SC-74/SOT-457 TA = 25°C unless otherwise noted Parameter CHM2313QPT Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous -4.6 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -18.4 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2006-07 RATING CHARACTERISTIC CURVES ( CHM2313QPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-4.6A 50 60 VGS=-4.5V, ID=-3.6A 75 90 VDS = -15V, ID = -4.6A 4 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=-15V, ID=-10A VGS=-10V 17 21 3 nC 3.5 V DD= -15V I D = -1.0A , VGS = -10 V RGEN= 6 Ω 10 20 6 12 46 90 23 45 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.7A , VGS = 0 V (Note 2) (Note 1) -1.7 A -1.2 V RATING CHARACTERISTIC CURVES ( CHM2313QPT ) Typical Electrical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics 10 50 VG S =- 1 0 , - 8 , - 6 V 8 VG S =- 5 V I D , DRAIN CURRENT (A) -I D , DRAIN CURRENT (A) 40 30 VG S =- 4 V 20 10 0 2 6 4 2 VG S =- 3 V 0 TJ=25°C 0 10 6 8 4 -V DS , DRAIN-TO-SOURCE VOLTAGE (V) TJ=125°C Figure 3. Gate Charge 10 2.2 R DS(on) , NORMALIZED 6 4 2 0 5 10 Qg , TOTAL GATE CHARGE (nC) 15 20 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 THRESHOLD VOLTAGE 2.5 3.0 Figure 4. On-Resistance Variation with Temperature VGS=4.6V ID=10A 0 Vth , NORMALIZED GATE-SOURCE 2.0 1.0 1.5 VGS , GATE-TO-SOURCE VOLTAGE (V) 1.9 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=-15V ID=-10A 8 1.3 0.5 0 TJ=-55°C 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200