RazerThin® LEDs CxxxRT230-S0100 Cree’s RazerThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s RT series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES APPLICATIONS • Small Chip - 200 x 200 x 85 μm • Low Forward Voltage – White – – Blue – Green • • 2.9 V Typical at 5 mA RT230™ LED Performance Mobile Phone Key Pads – 2.0 mW min. Blue (455-475 nm) • Audio Product Display Lighting – 1.5 mW min. Green (520-535 nm & 500- • Mobile Appliance Keypads 510 nm) • Single Wire Bond Structure • Class 2 ESD Rating CxxxRT230-S0100 Chip Diagram R3CN, Rev. B Datasheet: CP Top View Bottom View Side View G•SiC LED Chip 200 x 200 μm Mesa (junction) 176 x 176 μm Gold Bond Pad 105 μm Diameter Subject to change without notice. www.cree.com InGaN Anode (+) SiC Substrate h = 85 μm Backside Metallization 80 x 80 μm Cathode (-) Maximum Ratings at TA = 25°C Notes 1&3 CxxxRT230-S0100 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C460RT230-S0100 2.6 2.9 3.2 2 21 C470RT230-S0100 2.6 2.9 3.2 2 22 C505RT230-S0100 2.6 2.9 3.2 2 30 C527RT230-S0100 2.6 2.9 3.2 2 35 Mechanical Specifications Description CxxxRT230-S0100 Dimension Tolerance P-N Junction Area (μm) 176 x 176 ± 25 Top Area (μm) 200 x 200 ± 25 Bottom Area (μm) 200 x 200 ± 25 Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) 85 ± 10 105 -5, +15 1.2 ± 0.5 80 x 80 ± 25 Notes: 1. 2. 3. 4. 5. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Specifications are subject to change without notice. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc. CPR3CN Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxRT230-S0100 LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxRT230-S0100) orders may be filled with any or all bins (CxxxRT230-0xxx) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 5 mA. C460RT230-S0100 Radiant Flux 6.0 mW 4.0 mW C460RT230-0103 C460RT230-0104 C460RT230-0101 C460RT230-0102 2.0 mW 455 nm 460 nm Dominant Wavelength C470RT230-S0100 Radiant Flux 6.0 mW 4.0 mW C470RT230-0103 C470RT230-0104 C470RT230-0101 C470RT230-0102 2.0 mW 465 nm 470 nm Dominant Wavelength Radiant Flux Radiant Flux 2.5 mW C505RT230-0105 C505RT230-0106 C505RT230-0103 C505RT230-0104 C505RT230-0101 C505RT230-0102 1.5 mW 500 nm 505 nm Dominant Wavelength 510 nm C527RT230-S0100 4.0 mW 2.5 mW 475 nm C505RT230-S0100 6.0 mW 4.0 mW 465 nm C527RT230-0104 C527RT230-0105 C527RT230-0106 C527RT230-0101 C527RT230-0102 C527RT230-0103 1.5 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc. CPR3CN Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the RT230 product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current Forward Current vs Forward Voltage 12.0 30 527nm 8.0 25 505nm 470nm 4.0 Shift (nm) If (mA) 20 15 0.0 10 -4.0 5 -8.0 -12.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 5 10 15 20 25 30 If (mA) Vf (V) Relative Intensity vs. Peak Wavelength Relative Intensity vs Forward Voltage 140 100 460 nm 120 505 nm 80 Relative Intensity (%) % Relative Intensity 527 nm 100 80 60 40 60 40 20 20 0 0 0 5 10 15 If (mA) 20 25 30 350 400 450 500 Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc. CPR3CN Rev. B 550 600 650 Wavelength (nm) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com