BG3123... DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. (NTSC, PAL) • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BG3123 $ # BG3123R " 6 * 5 4 Drain B ) AGC RF Input RG1 A ! 1 2 3 G2 G1 RF Output + DC GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3123 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KOs BG3123R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KRs * For amp. A; ** for amp. B 180° rotated tape loading orientation available 1 2007-04-26 BG3123... Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Value 8 Unit V mA amp. A 25 amp. B 20 Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 V mW °C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point 1) Rthchs ≤ 150 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-26 BG3123... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 µA +IG2SS - - 50 nA IDSS - - 10 µA DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current mA IDSX VDS = 5 V, VG2S = 4 V, RG1 = 60 kΩ, amp. A - 14 - - 14 - VG1S(p) - 0.7 - VG2S(p) - 0.6 - VDS = 5 V, VG2S = 4 V, RG1 = 50 kΩ, amp. B Gate1-source pinch-off voltage V VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 3 2007-04-26 BG3123... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) Forward transconductance gfs mS amp. A - 30 - amp. B - 25 - Gate1 input capacitance pF Cg1ss f = 10 MHz, amp. A - 1.9 - f = 10 MHz, amp. B - 1.5 - f = 10 MHz, amp. A - 1.3 - f = 10 MHz, amp. B - 1.1 - Output capacitance Cdss Power gain Gp dB f = 800 MHz, amp. A - 25 - f = 800 MHz, amp. B - 24 - f = 45 MHz, amp. A - 32 - f = 45 MHz, amp. B - 30 - Noise figure dB F f = 800 MHz, amp. A - 1.8 - f = 800 MHz, amp. B - 1.8 - f = 45 MHz, amp. A - 1.4 - f = 45 MHz, amp. B - 1.6 - 45 - - ∆G p Gain control range VG2S = 4 ... 0 V , f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod amp.A , AGC = 0 dB 90 96 - amp. B, AGC = 0 dB 90 97 - amp. A , AGC = 10 dB - 91 - amp. B , AGC = 10 dB - 94 - amp. A, AGC = 40 dB 98 103 - amp. B, AGC = 40 dB 98 104 - 4 - 2007-04-26 BG3123... Total power dissipation Ptot = ƒ(TS) amp. A Total power dissipation Ptot = ƒ(TS) amp. B 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 120 °C 100 TS Drain current ID = ƒ(IG1) Drain current ID = ƒ(IG1) VG2S = 4V VG2S = 4V amp. A amp. B 16 16 mA mA 12 ID 12 ID 150 TS 10 10 8 8 6 6 4 4 2 2 0 0 10 20 30 40 50 µA 0 0 70 IG1 10 20 30 40 50 µA 70 IG1 5 2007-04-26 BG3123... Output characteristics ID = ƒ(V DS) VG2S = 4V, VG1S = Parameter in V Output characteristics ID = ƒ(V DS) VG2S = 4V, VG1S = Parameter in V amp. A amp. B 18 18 mA 1.7 mA 1.5 14 14 1.6 12 1.5 1.4 ID ID 12 1.3 10 10 8 8 1.2 1.3 6 6 4 4 2 2 0 0 2 4 6 8 V 10 0 0 14 1.0 2 4 6 8 V 10 VDS 14 VDS Gate 1 current IG1 = ƒ(V G1S) Gate 1 current IG1 = ƒ(V G1S) VDS = 5V, VG2S = Parameter in V VDS = 5V, VG2S = Parameter in V amp. A amp. B 120 120 4 µA µA 80 IG1 IG1 3 4 3.5 2.5 3 60 80 60 2.5 40 2 40 2 20 0 0 20 0.4 0.8 1.2 V 0 0 2 VG1S 0.4 0.8 1.2 V 2 VG1S 6 2007-04-26 BG3123... Gate 1 forward transconductance Gate 1 forward transconductance g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. A g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. B 25 32 4V mS 4V mS 3V 3V 2.5V g fs g fs 24 20 2.5V 15 2V 16 10 12 8 2V 5 4 0 0 4 8 12 mA 0 0 20 4 mA 8 16 ID ID Drain current ID = ƒ(VG1S) VDS = 5V, VG2S = Parameter Drain current ID = ƒ(V G1S) VDS = 5V, VG2S = Parameter amp. A amp. B 28 16 4V mA 4V mA 3V 3V 12 ID ID 20 10 2V 16 8 12 2V 6 1.5V 8 4 1.5V 4 0 0 2 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 0 0 2 VG1S 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2 VG1S 7 2007-04-26 BG3123... Drain current ID = ƒ(VGG ) amp. A VDS = 5V, VG2S = 4V, RG1 = 60kΩ Drain current ID = ƒ(V GG) amp. B VDS = 5V, VG2S = 4V, RG1 = 50kΩ (connected to VGG, VGG =gate1 supply voltage) (connected to VGG, V GG=gate1 supply voltage) 18 18 mA mA 12 12 ID 14 ID 14 10 10 8 8 6 6 4 4 2 2 0 0 1 2 3 4 V 5 0 0 7 1 2 3 4 V 5 VGG 7 VGG Drain current ID = ƒ(VGG) Drain current ID = ƒ(VGG) VG2S = 4V, RG1 = Parameter in kΩ VG2S = 4V, RG1 = Parameter in kΩ amp. A amp. B 18 18 50 mA mA 40 60 14 14 50 ID 12 ID 12 80 10 60 10 70 100 8 8 6 6 4 4 2 2 0 0 1 2 3 4 5 V 0 0 7 VGG=VDS 1 2 3 4 5 V 7 VGG=VDS 8 2007-04-26 BG3123... Crossmodulation Vunw = (AGC) Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ VDS = 5 V, Rg1 = 56 kΩ amp.A amp.B 120 120 V unw dBµV V unw dBµV 100 100 90 90 80 0 10 20 30 dB 80 0 50 AGC 10 20 30 dB 50 AGC 9 2007-04-26 BG3123... Crossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 10 2007-04-26 Package SOT363 BG3123... Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 11 2007-04-26 BG3123... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2007-04-26