Infineon BG3123 Dual n-channel mosfet tetrode Datasheet

BG3123...
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stages for UHF
4
5
6
and VHF -tuners e.g. (NTSC, PAL)
• Optimized for UHF (amp. B) and VHF (amp. A)
1
2
3
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BG3123
$
#
BG3123R
"
6
*
5
4
Drain
B
)
AGC
RF
Input RG1
A
!
1
2
3
G2
G1
RF Output
+ DC
GND
VGG
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BG3123
SOT363
1=G1* 2=G2
3=D*
4=D**
5=S
6=G1** KOs
BG3123R
SOT363
1=G1* 2=S
3=D*
4=D**
5=G2
6=G1** KRs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2007-04-26
BG3123...
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
Value
8
Unit
V
mA
amp. A
25
amp. B
20
Gate 1/ gate 2-source current
±IG1/2SM
1
Gate 1/ gate 2-source voltage
±V G1/G2S
6
Total power dissipation
Ptot
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
V
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point 1)
Rthchs
≤ 150
K/W
1For
calculation of RthJA please refer to Application Note Thermal Resistance
2
2007-04-26
BG3123...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
µA
+IG2SS
-
-
50
nA
IDSS
-
-
10
µA
DC Characteristics
Drain-source breakdown voltage
V
ID = 10 µA, VG1S = 0 V, VG2S = 0 V
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 V, VDS = 0 V
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 V, VDS = 0 V
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 V
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V
Drain-source current
mA
IDSX
VDS = 5 V, VG2S = 4 V, RG1 = 60 kΩ,
amp. A
-
14
-
-
14
-
VG1S(p)
-
0.7
-
VG2S(p)
-
0.6
-
VDS = 5 V, VG2S = 4 V, RG1 = 50 kΩ,
amp. B
Gate1-source pinch-off voltage
V
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA
3
2007-04-26
BG3123...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling)
Forward transconductance
gfs
mS
amp. A
-
30
-
amp. B
-
25
-
Gate1 input capacitance
pF
Cg1ss
f = 10 MHz, amp. A
-
1.9
-
f = 10 MHz, amp. B
-
1.5
-
f = 10 MHz, amp. A
-
1.3
-
f = 10 MHz, amp. B
-
1.1
-
Output capacitance
Cdss
Power gain
Gp
dB
f = 800 MHz, amp. A
-
25
-
f = 800 MHz, amp. B
-
24
-
f = 45 MHz, amp. A
-
32
-
f = 45 MHz, amp. B
-
30
-
Noise figure
dB
F
f = 800 MHz, amp. A
-
1.8
-
f = 800 MHz, amp. B
-
1.8
-
f = 45 MHz, amp. A
-
1.4
-
f = 45 MHz, amp. B
-
1.6
-
45
-
-
∆G p
Gain control range
VG2S = 4 ... 0 V , f = 800 MHz
Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod
amp.A , AGC = 0 dB
90
96
-
amp. B, AGC = 0 dB
90
97
-
amp. A , AGC = 10 dB
-
91
-
amp. B , AGC = 10 dB
-
94
-
amp. A, AGC = 40 dB
98
103
-
amp. B, AGC = 40 dB
98
104
-
4
-
2007-04-26
BG3123...
Total power dissipation Ptot = ƒ(TS)
amp. A
Total power dissipation Ptot = ƒ(TS)
amp. B
300
300
mW
200
P tot
P tot
mW
200
150
150
100
100
50
50
0
0
20
40
60
80
100
120 °C
0
0
150
20
40
60
80
120 °C
100
TS
Drain current ID = ƒ(IG1)
Drain current ID = ƒ(IG1)
VG2S = 4V
VG2S = 4V
amp. A
amp. B
16
16
mA
mA
12
ID
12
ID
150
TS
10
10
8
8
6
6
4
4
2
2
0
0
10
20
30
40
50
µA
0
0
70
IG1
10
20
30
40
50
µA
70
IG1
5
2007-04-26
BG3123...
Output characteristics ID = ƒ(V DS)
VG2S = 4V, VG1S = Parameter in V
Output characteristics ID = ƒ(V DS)
VG2S = 4V, VG1S = Parameter in V
amp. A
amp. B
18
18
mA
1.7
mA
1.5
14
14
1.6
12
1.5
1.4
ID
ID
12
1.3
10
10
8
8
1.2
1.3
6
6
4
4
2
2
0
0
2
4
6
8
V
10
0
0
14
1.0
2
4
6
8
V
10
VDS
14
VDS
Gate 1 current IG1 = ƒ(V G1S)
Gate 1 current IG1 = ƒ(V G1S)
VDS = 5V, VG2S = Parameter in V
VDS = 5V, VG2S = Parameter in V
amp. A
amp. B
120
120
4
µA
µA
80
IG1
IG1
3
4
3.5
2.5
3
60
80
60
2.5
40
2
40
2
20
0
0
20
0.4
0.8
1.2
V
0
0
2
VG1S
0.4
0.8
1.2
V
2
VG1S
6
2007-04-26
BG3123...
Gate 1 forward transconductance
Gate 1 forward transconductance
g fs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A
g fs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. B
25
32
4V
mS
4V
mS
3V
3V
2.5V
g fs
g fs
24
20
2.5V
15
2V
16
10
12
8
2V
5
4
0
0
4
8
12
mA
0
0
20
4
mA
8
16
ID
ID
Drain current ID = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
Drain current ID = ƒ(V G1S)
VDS = 5V, VG2S = Parameter
amp. A
amp. B
28
16
4V
mA
4V
mA
3V
3V
12
ID
ID
20
10
2V
16
8
12
2V
6
1.5V
8
4
1.5V
4
0
0
2
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
0
0
2
VG1S
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
2
VG1S
7
2007-04-26
BG3123...
Drain current ID = ƒ(VGG ) amp. A
VDS = 5V, VG2S = 4V, RG1 = 60kΩ
Drain current ID = ƒ(V GG) amp. B
VDS = 5V, VG2S = 4V, RG1 = 50kΩ
(connected to VGG, VGG =gate1 supply voltage)
(connected to VGG, V GG=gate1 supply voltage)
18
18
mA
mA
12
12
ID
14
ID
14
10
10
8
8
6
6
4
4
2
2
0
0
1
2
3
4
V
5
0
0
7
1
2
3
4
V
5
VGG
7
VGG
Drain current ID = ƒ(VGG)
Drain current ID = ƒ(VGG)
VG2S = 4V, RG1 = Parameter in kΩ
VG2S = 4V, RG1 = Parameter in kΩ
amp. A
amp. B
18
18
50
mA
mA
40
60
14
14
50
ID
12
ID
12
80
10
60
10
70
100
8
8
6
6
4
4
2
2
0
0
1
2
3
4
5
V
0
0
7
VGG=VDS
1
2
3
4
5
V
7
VGG=VDS
8
2007-04-26
BG3123...
Crossmodulation Vunw = (AGC)
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
VDS = 5 V, Rg1 = 56 kΩ
amp.A
amp.B
120
120
V unw
dBµV
V unw
dBµV
100
100
90
90
80
0
10
20
30
dB
80
0
50
AGC
10
20
30
dB
50
AGC
9
2007-04-26
BG3123...
Crossmodulation test circuit
VAGC
VDS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
RGEN
50Ω
4n7
50 Ω
RG1
VGG
Semibiased
10
2007-04-26
Package SOT363
BG3123...
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
11
2007-04-26
BG3123...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
12
2007-04-26
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