DS2003/DS9667/DS2004 High Current/Voltage Darlington Drivers General Description The DS2003/DS9667/DS2004 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage. The DS2003/DS9667 has a series base resistor to each Darlington pair, thus allowing operation directly with TTL or CMOS operating at supply voltages of 5.0V. The DS2004 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operating from supply voltages of 6.0V to 15V. The DS2003/DS9667/DS2004 offer solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodated by paralleling the outputs. Features Y Y Y Y Y Y Connection Diagram Seven high gain Darlington pairs High output voltage (VCE e 50V) High output current (IC e 350 mA) TTL, PMOS, CMOS compatible Suppression diodes for inductive loads Extended temperature range Order Numbers 16-Lead DIP J Package Number J16A N Package Number N16E M Package Number M16A DS2003 DS9667 DS2003MJ DS2003TJ DS2003CJ DS9667MJ DS9667TJ DS9667CJ DS2003TN DS2003CN DS9667TN DS9667CN DS2003TM DS2003CM DS2004 DS2004MJ DS2004TJ DS2004CJ DS2004TN DS2004CN DS2004TM DS2004CM TL/F/9647 – 1 Top View C1996 National Semiconductor Corporation TL/F/9647 RRD-B30M66/Printed in U. S. A. DS2003/DS9667/DS2004 High Current/Voltage Darlington Drivers December 1995 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature Range Ceramic DIP Molded DIP Operating Temperature Range DS2003M/DS9667M DS2004M Lead Temperature Ceramic DIP (Soldering, 60 seconds) Molded DIP (Soldering, 10 seconds) Maximum Power Dissipation* at 25§ C Cavity Package Molded Package S.O. Package b 65§ C to a 175§ C b 65§ C to a 150§ C DS2003T/DS9667T DS2004T b 55§ C to a 125§ C b 55§ C to a 125§ C b 40§ C to a 105§ C b 40§ C to a 105§ C DS2003C/DS9667C DS2004C 0§ C to a 85§ C 0§ C to a 85§ C 300§ C 265§ C 2016 mW 1838 mW 926 mW *Derate cavity package 16.13 mW/§ C above 25§ C; derate molded DIP package 14.7 mW/§ C above 25§ C. Derate S.O. package 7.4 mW/§ C. Input Voltage Output Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current 30V 55V 6.0V 500 mA 25 mA Electrical Characteristics TA e 25§ C, unless otherwise specified (Note 2) Symbol Parameter ICEX Output Leakage Current VCE(Sat) II(ON) Collector-Emitter Saturation Voltage Input Current Conditions TA e 25§ C, VCE e 50V (Figure 1a) Min Typ Max TA e 85§ C, VCE e 50V (Figure 1a) for Commercial Grade TA e 25§ C, VCE e 50V, VI e 1.0V (Figure 1b) DS2004 IC e 350 mA, IB e 500 mA (Figure 2) (Note 3) 1.25 1.6 IC e 200 mA, IB e 350 mA (Figure 2) 1.1 1.3 IC e 100 mA, IB e 250 mA (Figure 2) 0.9 1.1 DS2003/DS9667 0.93 1.35 DS2004 0.35 0.5 1.0 1.45 VI e 3.85V (Figure 3) VI e 5.0V (Figure 3) 100 Input Current (Note 4) TA e 85§ C for Commercial IC e 500 mA (Figure 4) VI(ON) Input Voltage (Note 5) VCE e 2.0V, IC e 200 mA (Figure 5) VCE e 2.0V, IC e 250 mA (Figure 5) 50 VCE e 2.0V, IC e 300 mA (Figure 5) VCE e 2.0V, IC e 125 mA (Figure 5) mA 500 VI e 12V (Figure 3) II(OFF) Units 20 100 DS2003/DS9667 V mA mA 2.4 2.7 3.0 DS2004 V 5.0 VCE e 2.0V, IC e 200 mA (Figure 5) 6.0 VCE e 2.0V, IC e 275 mA (Figure 5) VCE e 2.0V, IC e 350 mA (Figure 5) 7.0 8.0 CI Input Capacitance 15 30 pF tPLH Turn-On Delay 0.5 VI to 0.5 VO 1.0 ms tPHL Turn-Off Delay 0.5 VI to 0.5 VO 1.0 ms IR Clamp Diode Leakage Current VR e 50V (Figure 6) 50 100 mA mA VF Clamp Diode Forward Voltage IF e 350 mA (Figure 7) 2.0 V TA e 25§ C TA e 85§ C 1.7 Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation. Note 2: All limits apply to the complete Darlington series except as specified for a single device type. Note 3: Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat) e 1.6V at 70§ C with a pulse width of 20 ms and a duty cycle of 30%. Note 4: The II(OFF) current limit guaranteed against partial turn-on of the output. Note 5: The VI(ON) voltage limit guarantees a minimum output sink current per the specified test conditions. http://www.national.com 2 Typical Performance Characteristics Collector Current vs Saturation Voltage Collector Current vs Input Current DS2003/DS9667 Input Current vs Input Voltage DS2004 Input Current vs Input Voltage Peak Collector Current vs Duty Cycle and Number of Outputs (Molded Package) Peak Collector Current vs Duty Cycle and Number of Outputs (Ceramic Package) TL/F/9647 – 6 3 http://www.national.com Equivalent Circuits TL/F/9647 – 5 TL/F/9647–3 Test Circuits TL/F/9647–7 FIGURE 1a TL/F/9647 – 8 FIGURE 1b TL/F/9647 – 9 FIGURE 2 TL/F/9647–10 FIGURE 3 TL/F/9647 – 11 TL/F/9647 – 12 FIGURE 4 FIGURE 5 TL/F/9647 – 14 FIGURE 7 TL/F/9647–13 FIGURE 6 http://www.national.com 4 Typical Applications Buffer for Higher Current Loads TL/F/9647 – 16 TL/F/9647 – 17 5 http://www.national.com http://www.national.com 6 Physical Dimensions inches (millimeters) unless otherwise noted Ceramic Dual-In-Line Package (J) Order Number DS2003CJ, DS9667CJ, DS2003MJ, D9667MJ, DS2003TJ, DS9667TJ, DS2004CJ, DS2004MJ or DS2004TJ NS Package Number J16A Surface Mount Package (M) Order Number DS2003CM, DS9667CM, DS2003TM, DS9667TM, DS2004CM or DS2004TM NS Package Number M16A 7 http://www.national.com DS2003/DS9667/DS2004 High Current/Voltage Darlington Drivers Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Molded Dual-In-Line Package (N) Order Number DS2003CN, DS9667CN, DS2003TN, DS9667TN, DS2004CN or DS2004TN NS Package Number N16E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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