Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD15380F3 SLPS579 – MAY 2016 CSD15380F3 20-V N-Channel FemtoFET™ MOSFET 1 Features • • • 1 • • • • Text added for spacing Ultra-Low CiSS and COSS Ultra-Low Qg and Qgd Ultra-Small Footprint – 0.73 mm × 0.64 mm Ultra-Low Profile – 0.35-mm Max Height Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM Lead and Halogen Free RoHS Compliant Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) VGS(th) Drain-to-Source On-Resistance UNIT 20 V 0.216 nC 0.027 nC VGS = 2.5 V 2220 mΩ VGS = 4.5 V 1170 mΩ VGS = 8 V 990 mΩ Threshold Voltage 1.1 V Ordering Information(1) Device Qty Media Package Ship CSD15380F3 3000 7-Inch Reel 2 Applications CSD15380F3T 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) Tape and Reel • • (1) For all available packages, see the orderable addendum at the end of the data sheet. • • Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Battery Applications Handheld and Mobile Applications 3 Description This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Text added for spacing Absolute Maximum Ratings TA = 25°C (unless otherwise stated) VALUE UNIT VDS Drain-to-Source Voltage 20 V VGS Gate-to-Source Voltage 10 V ID Continuous Drain Current(1) 0.5 A IDM Pulsed Drain Current(2) 1.6 A PD Power Dissipation(1) 500 mW Human Body Model (HBM) 4 kV Charged Device Model (CDM) 2 kV –55 to 150 °C V (ESD) TJ, Tstg Operating Junction and Storage Temperature (1) Typical RθJA = 255°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. a Typical Part Dimensions Top View G 0.35 mm D 0.64 mm 0.73 mm S 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD15380F3 SLPS579 – MAY 2016 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 6.1 6.2 6.3 6.4 1 1 1 2 3 7 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 Mechanical Dimensions ............................................ 8 7.2 Recommended Minimum PCB Layout...................... 9 7.3 Recommended Stencil Pattern ................................. 9 Device and Documentation Support.................... 7 4 Revision History 2 DATE REVISION NOTES May 2016 * Initial release. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 CSD15380F3 www.ti.com SLPS579 – MAY 2016 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA IDSS Drain-to-Source leakage current VGS = 0 V, VDS = 16 V 50 nA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 25 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 2.5 μA RDS(on) Drain-to-source on-resistance gfs Transconductance 20 0.85 V 1.10 1.35 V VGS = 2.5 V, IDS = 0.1 A 2220 4000 mΩ VGS = 4.5 V, IDS = 0.1 A 1170 1460 mΩ VGS = 8 V, IDS = 0.1 A 990 1190 mΩ VDS = 2 V, IDS = 0.1 A 0.64 S DYNAMIC CHARACTERISTICS Ciss Input capacitance 8.1 10.5 pF 5.9 7.7 pF 0.13 0.17 pF VGS = 0 V, VDS = 10 V, ƒ = 1 MHz Coss Output capacitance Crss Reverse transfer capacitance RG Series gate resistance Qg Gate charge total (4.5 V) 0.216 Qgd Gate charge gate-to-drain 0.027 nC Qgs Gate charge gate-to-source 0.077 nC Qg(th) Gate charge at Vth 0.048 nC td(on) Turn on delay time 3 ns tr Rise time 1 ns td(off) Turn off delay time 7 ns tf Fall time 7 ns Ω 9.6 VDS = 10 V, IDS = 0.1 A VDS = 10 V, VGS = 4.5 V, IDS = 0.1 A, RG = 0 Ω 0.281 nC DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 0.1 A, VGS = 0 V 0.85 1 V 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC RθJA (1) (2) Junction-to-ambient thermal resistance (1) Junction-to-ambient thermal resistance 2 (2) TYPICAL VALUES UNIT 90 °C/W 255 °C/W 2 Device mounted on FR4 material with 1-in (6.45-cm ), 2-oz (0.071-mm) thick Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 3 CSD15380F3 SLPS579 – MAY 2016 www.ti.com 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance 0.5 VGS = 2.5 V VGS = 4.5 V VGS = 8.0 V 0.6 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) 0.7 0.5 0.4 0.3 0.2 0.1 TC = 125° C TC = 25° C TC = -55° C 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-to-Source Voltage (V) 0.6 0.7 0 0.5 D002 1 1.5 2 2.5 3 VGS - Gate-to-Source Voltage (V) 3.5 4 D003 VDS = 5 V Figure 2. Saturation Characteristics 4 Submit Documentation Feedback Figure 3. Transfer Characteristics Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 CSD15380F3 www.ti.com SLPS579 – MAY 2016 Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 100 7 6 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 8 5 4 3 2 10 1 0.1 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 1 0 0.01 0 0.05 0.1 0.15 0.2 0.25 0.3 Qg - Gate Charge (nC) VDS = 10 V 0.35 0.4 0.45 0 2 4 D004 6 8 10 12 14 16 VDS - Drain-to-Source Voltage (V) Figure 4. Gate Charge D005 Figure 5. Capacitance 4000 RDS(on) - On-State Resistance (m:) VGS(th) - Threshold Voltage (V) 20 ID = 0.1 A 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -75 18 TC = 25° C, I D = 0.1 A TC = 125° C, I D = 0.1 A 3600 3200 2800 2400 2000 1600 1200 800 400 0 -50 -25 0 25 50 75 100 TC - Case Temperature (° C) 125 150 0 175 1 2 D006 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 D007 ID = 2.5 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage 10 1.4 VGS = 2.5 V VGS = 8.0 V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 -75 TC = 25° C TC = 125° C 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 TC - Case Temperature (° C) 125 150 175 0 0.1 D008 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD - Source-to-Drain Voltage (V) 0.9 1 D009 ID = 0.1 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 5 CSD15380F3 SLPS579 – MAY 2016 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) 0.8 100 ms 10 ms 1 ms 100 µs 10 µs IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) 10 1 0.1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 -25 D010 0 25 50 75 100 125 TC - Case Temperature (° C) 150 175 D012 Single Pulse, Typical RθJA = 255°C/W (min Cu) Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 CSD15380F3 www.ti.com SLPS579 – MAY 2016 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.2 Trademarks FemtoFET, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 6.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 7 CSD15380F3 SLPS579 – MAY 2016 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 Mechanical Dimensions 0.73 0.65 A B PIN 1 INDEX AREA 0.64 0.56 0.35 MAX C SEATING PLANE 0.4 0.225 2 3 0.175 0.51 0.49 0.35 1 0.015 0.16 2X 0.14 C B A 2X 0.16 0.14 0.015 C A B 0.26 0.24 (1) All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994). (2) This drawing is subject to change without notice. (3) This package is a PB-free solder land design. Pin Configuration Position 8 Designation Pin 1 Gate Pin 2 Source Pin 3 Drain Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 CSD15380F3 www.ti.com SLPS579 – MAY 2016 7.2 Recommended Minimum PCB Layout (0.15) 2X (0.25) 2X (0.15) 0.05 MIN ALL AROUND TYP 1 3 SYMM (0.35) (0.5) 2 (R0.05) TYP METAL UNDER SOLDER MASK TYP (0.175) SOLDER MASK OPENING TYP PKG (0.4) (1) All dimensions are in millimeters. 7.3 Recommended Stencil Pattern 2X (0.25) (0.15) 2X (0.15) 1 3 SYMM (0.35) (0.5) 2 (R0.05) TYP PKG (0.175) (0.4) (1) All dimensions are in millimeters. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: CSD15380F3 9 PACKAGE OPTION ADDENDUM www.ti.com 28-May-2016 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CSD15380F3 ACTIVE PICOSTAR YJM 3 3000 Green (RoHS & no Sb/Br) Call TI Level-1-260C-UNLIM -55 to 150 6 CSD15380F3T ACTIVE PICOSTAR YJM 3 250 Green (RoHS & no Sb/Br) Call TI Level-1-260C-UNLIM -55 to 150 6 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 28-May-2016 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 9-Jul-2016 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) CSD15380F3 PICOST AR YJM 3 3000 178.0 8.4 CSD15380F3 PICOST AR YJM 3 3000 180.0 8.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 0.7 0.79 0.44 4.0 8.0 Q2 0.7 0.79 0.44 4.0 8.0 Q2 PACKAGE MATERIALS INFORMATION www.ti.com 9-Jul-2016 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD15380F3 PICOSTAR YJM 3 3000 220.0 220.0 35.0 CSD15380F3 PICOSTAR YJM 3 3000 182.0 182.0 20.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2016, Texas Instruments Incorporated