CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 ABSOLUTE MAXIMUM RATINGS S TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS ±20 V ID 5 A IDM 20 A PD 1.25 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 100 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.June http://www.cetsemi.com CEA3252 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = 250µA 3.0 V VGS = 10V, ID = 5A 1.0 26 32 mΩ VGS = 4.5V, ID = 4A 36 45 mΩ d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 610 pF 145 pF 95 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 9 VDD = 15V, ID = 5A, VGS = 10V, RGEN = 3Ω 20 ns 3 8 ns 24 50 ns Turn-Off Fall Time tf 4 10 ns Total Gate Charge Qg 12.3 16 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 5A, VGS = 10V 1.5 nC 2.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 2.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 5 A 1.2 V CEA3252 20 8 VGS=5V ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7,6V 15 10 VGS=4V 5 6 4 25 C 2 TJ=125 C -55 C VGS=3V 0 0 0 1 2 3 4 5 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 5 6 Figure 2. Transfer Characteristics 600 450 300 Coss 150 Crss 0 0 3 6 9 12 15 2.2 1.9 ID=5A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 VGS, Gate-to-Source Voltage (V) 750 1.2 2 VDS, Drain-to-Source Voltage (V) 900 1.3 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 V =15V DS ID=5A 6 4 2 0 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEA3252 3 6 9 12 10 1ms 10ms 10 10 10 15 1 1s 0 DC -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 10 -2 t1 0.01 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2