BU406, BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● 7 A Continuous Collector Current ● 15 A Peak Collector Current ● 60 W at 25°C Case Temperature AUGUST 1978 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 BU406 BU407 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE VCBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V VEB 6 V IC 7 A ICM 15 A IB 4 A Ptot 60 W Tj -55 to +150 °C Tstg -55 to +150 °C 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICES IEBO hFE VCE(sat) V BE(sat) ft Cob TEST CONDITIONS Collector-emitter breakdown voltage IC = 30 mA MIN IB = 0 TYP MAX 140 V VCE = 400 V VBE = 0 BU406 V CE = 330 V VBE = 0 BU407 5 Collector-emitter V CE = 250 V VBE = 0 BU406 0.1 cut-off current V CE = 200 V VBE = 0 BU407 0.1 5 V CE = 250 V VBE = 0 TC = 150°C BU406 1 V CE = 200 V VBE = 0 TC = 150°C BU407 1 VEB = 6V IC = 0 Forward current VCE = 10 V IC = transfer ratio V CE = 10 V IC = 0.5 A IB = 0.5 A IC = 5A IB = 0.5 A IC = 5A Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VCE = 5V VCB = 20 V 4A UNIT mA 1 mA (see Notes 2 and 3) 1 V (see Notes 2 and 3) 1.2 V (see Notes 2 and 3) IC = 0.5 A f = 1 MHz IE = 0 f = 1 MHz 12 20 (see Note 4) 6 MHz 60 pF NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 2.08 °C/W 70 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † ts Storage time t(off) Turn off time IC = 5 A IB(end) = 0.5A † MIN (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP MAX 2.7 UNIT µs 750 ns BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION V BB+ V cc = 24V 5.6 Ω 47 Ω SET IB 22 Ω TIP32 100 Ω +4V 7.5 Ω 240 µ H 100 Ω TIP32 BY205 Current Probes 50 Ω 5 pF INPUT 0 1 kΩ 2N5337 14.8 µ H TUT OUTPUT BY205 2N6191 TIP31 TIP31 TIP31 22 Ω 22 Ω V BB- Figure 1. Inductive-Load Switching Test Circuit 64 µ s 42 µ s IB I B(end) 50% 0 t s IC 0.1 A 0 t off toff is the time for the collector current IC to decrease to 0.1 A after the collector to emitter Vfly voltage VCE has risen 3 V into V CE its flyback excursion. 0 3V Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCD124AA 70 TC = 25°C tp < 300 µs d < 2% TC = 100°C 50 40 TC = 25°C 30 20 40 30 20 10 10 TC = -55°C 0 0·1 TCD124AB 50 tp < 300 µs d < 2% VCE = 5 V hFE - Typical DC Current Gain hFE - Typical DC Current Gain 60 TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1·0 VCE = 1 V VCE = 5 V VCE = 10 V 0 0·1 10 IC - Collector Current - A 1·0 IC - Collector Current - A Figure 3. Figure 4. VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE TCD124AC 0·8 tp < 300 µs d < 2% 0·7 0·6 IC = 8 A IB = 2 A 0·5 0·4 0·3 IC = 4 A IB = 0.5 A 0·2 0·1 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 10 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAD124AA 1·0 0·1 BU407 BU406 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. PRODUCT INFORMATION 5 BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7