POINN BU406 Npn silicon power transistor Datasheet

BU406, BU407
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
●
7 A Continuous Collector Current
●
15 A Peak Collector Current
●
60 W at 25°C Case Temperature
AUGUST 1978 - REVISED MARCH 1997
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = -2 V)
Collector-emitter voltage (IB = 0)
SYMBOL
BU406
BU407
BU406
BU407
BU406
BU407
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
VCBO
VCEX
VCEO
VALUE
400
330
400
330
200
150
UNIT
V
V
V
VEB
6
V
IC
7
A
ICM
15
A
IB
4
A
Ptot
60
W
Tj
-55 to +150
°C
Tstg
-55 to +150
°C
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICES
IEBO
hFE
VCE(sat)
V BE(sat)
ft
Cob
TEST CONDITIONS
Collector-emitter
breakdown voltage
IC =
30 mA
MIN
IB = 0
TYP
MAX
140
V
VCE = 400 V
VBE = 0
BU406
V CE = 330 V
VBE = 0
BU407
5
Collector-emitter
V CE = 250 V
VBE = 0
BU406
0.1
cut-off current
V CE = 200 V
VBE = 0
BU407
0.1
5
V CE = 250 V
VBE = 0
TC = 150°C
BU406
1
V CE = 200 V
VBE = 0
TC = 150°C
BU407
1
VEB =
6V
IC = 0
Forward current
VCE =
10 V
IC =
transfer ratio
V CE =
10 V
IC = 0.5 A
IB =
0.5 A
IC =
5A
IB =
0.5 A
IC =
5A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
VCE =
5V
VCB =
20 V
4A
UNIT
mA
1
mA
(see Notes 2 and 3)
1
V
(see Notes 2 and 3)
1.2
V
(see Notes 2 and 3)
IC = 0.5 A
f = 1 MHz
IE = 0
f = 1 MHz
12
20
(see Note 4)
6
MHz
60
pF
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
2.08
°C/W
70
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
ts
Storage time
t(off)
Turn off time
IC = 5 A
IB(end) = 0.5A
†
MIN
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TYP
MAX
2.7
UNIT
µs
750
ns
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
V BB+
V cc = 24V
5.6 Ω
47 Ω
SET
IB
22 Ω
TIP32
100 Ω
+4V
7.5 Ω
240 µ H
100 Ω
TIP32
BY205
Current
Probes
50 Ω
5 pF
INPUT
0
1 kΩ
2N5337
14.8 µ H
TUT
OUTPUT
BY205
2N6191
TIP31
TIP31
TIP31
22 Ω
22 Ω
V BB-
Figure 1. Inductive-Load Switching Test Circuit
64 µ s
42 µ s
IB
I
B(end)
50%
0
t
s
IC
0.1 A
0
t off
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
Vfly
voltage VCE has risen 3 V into
V
CE
its flyback excursion.
0
3V
Figure 2. Inductive-Load Switching Waveforms
PRODUCT
INFORMATION
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCD124AA
70
TC = 25°C
tp < 300 µs
d < 2%
TC = 100°C
50
40
TC = 25°C
30
20
40
30
20
10
10
TC = -55°C
0
0·1
TCD124AB
50
tp < 300 µs
d < 2%
VCE = 5 V
hFE - Typical DC Current Gain
hFE - Typical DC Current Gain
60
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1·0
VCE = 1 V
VCE = 5 V
VCE = 10 V
0
0·1
10
IC - Collector Current - A
1·0
IC - Collector Current - A
Figure 3.
Figure 4.
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TCD124AC
0·8
tp < 300 µs
d < 2%
0·7
0·6
IC = 8 A
IB = 2 A
0·5
0·4
0·3
IC = 4 A
IB = 0.5 A
0·2
0·1
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
10
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAD124AA
1·0
0·1
BU407
BU406
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
PRODUCT
INFORMATION
5
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
6
INFORMATION
MDXXBE
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7
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