DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively k handbook, 4 columns a MAM061 • Repetitive peak forward current: max. 625 mA. APPLICATIONS • Switching in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. 1996 Sep 17 Cathode indicated by green band. Fig.1 Simplified outline (SOD80C) and symbol. 2 Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BAV100 − 60 V BAV101 − 120 V BAV102 − 200 V BAV103 − 250 V continuous reverse voltage BAV100 − 50 V BAV101 − 100 V BAV102 − 150 V BAV103 − 200 V − 250 mA − 625 mA t = 1 µs − 9 A t = 100 µs − 3 A t=1s − 1 A IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 400 Tstg storage temperature Tamb = 25 °C; note 1 −65 +175 °C Tj junction temperature − 175 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 3 mW Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 100 mA − 1.0 V IF = 200 mA − 1.25 V see Fig.5 VR = 50 V − 100 nA VR = 50 V; Tj = 150 °C − 100 µA BAV101 VR = 100 V − 100 nA VR = 100 V; Tj = 150 °C − 100 µA BAV102 VR = 150 V − 100 nA VR = 150 V; Tj = 150 °C − 100 µA BAV100 BAV103 VR = 200 V − 100 nA VR = 200 V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 − 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 4 VALUE UNIT 300 K/W 375 K/W Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 GRAPHICAL DATA MBH278 300 MBG459 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 400 200 (1) (3) 200 100 0 0 0 100 Tamb (oC) 0 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 5 104 Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 MGD009 103 handbook, halfpage MGD005 1.6 handbook, halfpage IR (µA) Cd (pF) 102 1.4 10 1.2 1 1.0 10−1 10−2 0 100 Tj (oC) 0.8 200 0 VR = VRmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. MBG700 300 handbook, halfpage VR (V) (1) 200 (2) (3) 100 (4) 0 0 100 Tamb (oC) 200 (1) BAV103. (2) BAV102. (3) BAV101. (4) BAV100. Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 1996 Sep 17 6 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 1 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 t rr 7 output signal Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 3.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 17 8