ISC BDW48 Isc silicon pnp darlington power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= -5A
·Low Collector Saturation Voltage
: VCE(sat)= -2.0V(Max.)@ IC= -5.0A
= -3.0V(Max.)@ IC= -10A
·Complement to Type BDW43
APPLICATIONS
·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
-0.5
A
PC
Collector Power Dissipation
@ TC=25℃
85
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
1.47
℃/W
BDW48
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
BDW48
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -30mA; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -5A; IB= -10mA
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -50mA
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -10A ; VCE= -4V
-3.0
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-1.0
mA
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
-2.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -5A ; VCE= -4V
1000
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
250
Current-Gain—Bandwidth Product
IC= -3A; VCE= -3V; ftest= 1MHz
Output Capacitance
IE= 0; VCB= -10V; ftest= 0.1MHz
fT
COB
isc Website:www.iscsemi.cn
-120
UNIT
B
B
2
V
4
MHz
300
pF
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