ALD ALD1107PBL Quad/dual p-channel matched pair mosfet array Datasheet

ADVANCED
LINEAR
DEVICES, INC.
ALD1107/ALD1117
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC, operating environment. The ALD1107/ALD1117
are building blocks for differential amplifier input stages, transmission
gates, and multiplexer applications, current sources and many precision
analog circuits.
FEATURES
• Low threshold voltage of -0.7V
• Low input capacitance
• Low Vos 2mV typical
• High input impedance -- 1014Ω typical
• Negative current (IDS) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 109
• Low input and output leakage currents
• RoHS compliant
•
•
•
•
•
•
•
•
Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
PIN CONFIGURATION
ALD1117
DP1
1
8
DP2
GP1
2
7
GP2
SP1
3
6
SP2
V-
4
5
V+
TOP VIEW
SAL, PAL, DA PACKAGES
ALD1107
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
-55°C to +125°C
0°C to +70°C
APPLICATIONS
8-Pin SOIC
Package
8-Pin Plastic Dip
Package
8-Pin CERDIP
Package
ALD1117SAL
ALD1117PAL
ALD1117DA
14-Pin SOIC
Package
14-Pin Plastic Dip
Package
14-Pin CERDIP
Package
ALD1107SBL
ALD1107PBL
ALD1107DB
DP1
1
14
DP2
GP1
2
13
GP2
SP1
3
12
SP2
V-
4
11
V+
DP4
5
10
DP3
GP4
6
9
GP3
SP4
7
8
SP3
TOP VIEW
SBL, PBL, DB PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
BLOCK DIAGRAM
ALD1107
ALD1117
V- (4)
DP2 (14)
DP1 (1)
GP2 (13)
GP1 (2)
SP1 (3)
V+ (11)
SP2 (12)
~
V - (4)
DP4 (5)
DP3 (10)
GP3 (9)
DP1 (1)
GP4 (6)
SP3 (8)
V+ (11)
SP4 (7)
~
DP2 (8)
GP1 (2)
GP2 (7)
SP1 (3)
V+ (5)
SP2 (6)
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range
SAL, PAL, SBL, PBL packages
DA, DB packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
-10.6V
-10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
ALD1107
Parameter
Symbol
Gate Threshold
Voltage
VT
Offset Voltage
VGS1-VGS2
VOS
Gate Threshold
Temperature
Drift 2
On Drain
Current
Transconductance
Min
-0.4
TCVT
ALD1117
Test
Typ
Max
Min
Typ
-0.7
-1.0
-0.4
-0.7
-1.0
2
10
2
10
-1.3
Max
-1.3
IDS (ON)
-1.3
-2
-1.3
-2
GIS
0.25
0.67
0.25
0.67
Unit
Conditions
V
IDS = -1.0µA VGS = VDS
mV
IDS = -10µA VGS = VDS
mV/°C
mA
VGS = VDS = -5V
mmho VDS = -5V IDS = -10mA
Mismatch
∆Gfs
0.5
0.5
%
Output
Conductance
GOS
40
40
µmho
VDS = -5V IDS = -10mA
Ω
VDS = -0.1V VGS = -5V
%
VDS = -0.1V VGS = -5V
V
IDS = -1.0µA VGS = 0V
Drain Source
On Resistance
RDS (ON)
Drain Source
On Resistance
Mismatch
∆RDS (ON)
Drain Source
Breakdown
Voltage
BVDSS
1200
1800
1200
0.5
1800
0.5
-12
-12
Off Drain
Current 1
IDS (OFF)
10
400
4
10
400
4
pA
nA
VDS = -12V VGS = 0V
TA = 125°C
Gate Leakage
Current
IGSS
0.1
10
1
0.1
10
1
pA
nA
VDS = 0V VGS = -12V
TA = 125°C
Input
Capacitance 2
CISS
1
3
1
3
pF
Notes:
1
2
Consists of junction leakage currents
Sample tested parameters
ALD1107/ALD1117
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TYPICAL PERFORMANCE CHARACTERISITCS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
VGS = -12V
VBS = 0V
TA = 25°C
-7.5
DRAIN SOURCE CURRENT
(µA)
DRAIN SOURCE CURRENT
(mA)
500
-10
-10V
-8V
-5.0
-6V
-2.5
-4V
VGS = -12V
VBS = 0V
TA = 25°C
250
-6V
-4V
-2V
0
-250
-2V
-500
0
0
-2
-4
-6
-8
-10
-12
-320
-160
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
-20
1.0
IDS = -5mA
VBS = 0V
f = 1KHz
0.5
0.2
0.1
TA = +125°C
TA = +25°C
0.05
VBS = 0V
DRAIN SOURCE CURRENT
(µA)
FORWARD TRANSCONDUCTANCE
(mmho)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
IDS = -1mA
0.02
4V
6V
8V
10V
12V
2V
-15
-10
-5
VGS = VDS
TA = 25°C
0
0.01
0
-2
-4
-6
-8
-10
0
-12
-0.8
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
-2.4
-3.2
-4.0
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT
(pA)
100
VDS = 0.4V
VBS = 0V
10
-1.6
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
(KΩ)
320
160
0
TA = +125°C
1
TA = +25°C
1000
VDS = -12V
VGS = VBS = 0V
100
10
1
0.1
0
-2
-4
-6
-8
-10
-12
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1107/ALD1117
-50
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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V
1/2 ALD1107
or ALD1117
1/2 ALD1107
or ALD1117
V+ = +5V
Q3
ISET
Q4
Q3
Q4
RSET
ISET
I SOURCE
Q1
Digital Logic Control
of Current Source
ON
Q2
I SOURCE = ISET
= V+ -Vt
RSET
~
=
4
RSET
1/2 ALD1106
or ALD1116
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
V+ = +5V
PMOS PAIR
ISET
Q1
Q2
NMOS PAIR
1/2 ALD1106
or ALD1116
ISOURCE = ISET x N
Q1
QSET
Q2
Q3
QN
VIN-
Current
Source
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
ALD1107/ALD1117
RSET
Q4
VOUT
VIN+
1/4 ALD1106
or 1/2 ALD1116
Q1
: N - Channel MOSFET
Q3,Q4 : P - Channel MOSFET
1/2 ALD1107
or ALD1117
Q3
Q1
OFF
DIFFERENTIAL AMPLIFIER
V+
ISOURCE
RSET
QSET, Q1..QN: ALD1106 or ALD1116
N - Channel MOSFET
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TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
P- CHANNEL CURRENT SOURCE
N- CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
1/2 ALD1107
or ALD1117
RSET
ISET
ISOURCE
8
Q2 8
3
5
6
Q1
2
7
3
2
Q4
5
1
I SOURCE
ISET
1/2 ALD1106
or ALD1116
ISOURCE = ISET =
7
6
Q3
V+ - Vt
RSET
~ V+ - 1.0 =
~
=
RSET
RSET
4
RSET
Q3, Q4: P - Channel MOSFET
Q1, Q2 : N - Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ALD1107
ISET
RSET
ISOURCE
Q4
Q1
Q2
Q3
Q4
Q3
Q2
Q1
ISET
ISOURCE
RSET
ALD1106
ISOURCE = ISET =
~
=
3
RSET
Q1, Q2, Q3, Q4: P - Channel MOSFET
(ALD1102 or ALD1103)
Q1, Q2, Q3, Q4: N - Channel MOSFET
(ALD1101 or ALD1103)
ALD1107/ALD1117
V+ - 2Vt
RSET
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1107/ALD1117
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ALD1107/ALD1117
ø
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CERDIP-8 PACKAGE DRAWING
8 Pin CERDIP Package
E E1
Millimeters
D
A1
s
A
L
L2
b
b1
e
L1
Min
Inches
Dim
A
3.55
Max
5.08
Min
0.140
Max
0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-8
--
10.29
--
0.405
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C
e1
ALD1107/ALD1117
ø
Advanced Linear Devices
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SOIC-14 PACKAGE DRAWING
14 Pin Plastic SOIC Package
Millimeters
E
S (45°)
Dim
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-14
8.55
8.75
0.336
0.345
E
3.50
4.05
0.140
0.160
1.27 BSC
e
D
A
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
A1
e
b
S (45°)
H
L
ALD1107/ALD1117
C
ø
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PDIP-14 PACKAGE DRAWING
14 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
A
L
Inches
Dim
A
Min
Max
Min
3.81
5.08
0.105
Max
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-14
17.27
19.30
0.680
0.760
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-14
1.02
2.03
0.040
0.080
ø
0°
15°
0°
15°
e
b
b1
c
e1
ALD1107/ALD1117
ø
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CERDIP-14 PACKAGE DRAWING
14 Pin CERDIP Package
Millimeters
E E1
D
A1
s
A
L
L1
L2
b
b1
e
Inches
Dim
A
Min
Max
Min
Max
3.55
5.08
0.140
0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-14
--
19.94
--
0.785
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C
e1
ALD1107/ALD1117
ø
Advanced Linear Devices
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