APTGF90TA60P Triple phase leg NPT IGBT Power Module VBUS2 VBUS3 G1 G3 G5 E1 U G2 E2 0/VBUS1 E3 V E5 W G4 G6 E4 E6 0/VBUS2 0/VBUS3 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • • • VBUS 1 VBUS 2 G1 0/VBUS 1 U E1 VBUS 3 G3 0/VBUS 2 E3 G5 0/VBUS 3 E5 E2 E4 E6 G2 G4 G6 V W Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Absolute maximum ratings Symbol VCES Non Punch Through (NPT) THUNDERBOLT IGBT ® Tc = 25°C Max ratings 600 110 90 315 ±20 416 Tj = 150°C 315A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF90TA60P – Rev 0 September, 2004 VBUS1 VCES = 600V IC = 90A @ Tc = 80°C APTGF90TA60P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Test Conditions VGE = 0V, IC = 100µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min 600 VGS = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Max 100 1000 2.0 2.2 VGE =15V IC = 90A Test Conditions VGE = 0V VCE = 25V f = 1MHz Typ 3 Min Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 2.5 Unit V µA V 5 ±150 V nA Max Unit pF nC ns mJ ns mJ APT website – http://www.advancedpower.com 2-6 APTGF90TA60P – Rev 0 September, 2004 X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 APTGF90TA60P Reverse diode ratings and characteristics Symbol Characteristic VRRM Test Conditions Min Maximum Reverse Leakage Current VR=600V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C Diode Forward Voltage IF = 60A IF = 120A IF = 60A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt =200A/µs 250 500 Tj = 125°C Tj = 25°C 130 Tj = 125°C Tj = 25°C 170 220 Tj = 125°C 920 Symbol Characteristic VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Unit To heatsink V 60 1.6 1.9 1.4 Thermal and package characteristics RthJC Max 600 Maximum Peak Repetitive Reverse Voltage IRM VF Typ M6 2500 -40 -40 -40 3 Typ µA A 1.8 V ns nC Max 0.3 0.9 Unit °C/W V 150 125 100 5 250 °C N.m g Package outline APT website – http://www.advancedpower.com 3-6 APTGF90TA60P – Rev 0 September, 2004 5 places (3:1) APTGF90TA60P Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 Tc=-55°C 250µs Pulse Test < 0.5% Duty cycle 300 250 Ic, Collector Current (A) Tc=25°C 200 150 Tc=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 Tc=25°C 150 100 Tc=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 2 Gate Charge VGE, Gate to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 200 150 100 TJ =25°C 50 T J=125°C T J =-55°C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) IC = 90A TJ = 25°C 16 14 VCE=120V VCE=300V 12 10 VCE=480V 8 6 4 2 0 10 0 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 4 18 250 VCE, Collector to Emitter Voltage (V) 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 300 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 1.5 Ic=45A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 160 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) Tc=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF90TA60P – Rev 0 September, 2004 Ic, Collector Current (A) 350 APTGF90TA60P Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 ICE, Collector to Emitter Current (A) 250 200 VGE=15V, TJ=125°C 150 100 50 150 25 Current Rise Time vs Collector Current VGE=15V, T J=125°C 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 60 T J = 125°C 40 20 150 TJ = 25°C 25 Turn-On Energy Loss vs Collector Current 6 Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) 125 0 0 VCE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 TJ =25°C, VGE=15V 2 0 0 25 50 75 100 125 VCE = 400V VGE = 15V RG = 5Ω 5 4 Eoff, 180A Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 TJ = 125°C 2 1 0 150 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) 12 Eon, 180A 150 TJ = 25°C 3 Switching Energy Losses vs Gate Resistance VCE = 400V VGE = 15V TJ= 125°C 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) 100 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 20 16 75 Current Fall Time vs Collector Current 80 40 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ =25°C VCE = 400V RG = 5Ω 10 V CE = 400V VGE = 15V RG = 5Ω 8 Eon, 180A Eoff, 180A 6 Eon, 90A 4 Eoff, 90A 2 Eoff, 45A Eon, 45A 0 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-6 APTGF90TA60P – Rev 0 September, 2004 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF90TA60P Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 10000 350 IC , Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 300 250 200 150 100 50 0 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) 200 0.1 1 Operating Frequency vs Collector Current ZVS 160 120 ZCS VCE = 400V D = 50% RG = 5Ω TJ = 125°C TC = 75°C 80 40 Hard switching 0 20 40 60 80 100 IC , Collector Current (A) 120 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF90TA60P – Rev 0 September, 2004 0.15 Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35