ADPOW APTGF90TA60P Triple phase leg npt igbt power module Datasheet

APTGF90TA60P
Triple phase leg
NPT IGBT Power Module
VBUS2
VBUS3
G1
G3
G5
E1
U
G2
E2
0/VBUS1
E3
V
E5
W
G4
G6
E4
E6
0/VBUS2
0/VBUS3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
•
•
•
VBUS 1
VBUS 2
G1
0/VBUS 1
U
E1
VBUS 3
G3
0/VBUS 2
E3
G5
0/VBUS 3
E5
E2
E4
E6
G2
G4
G6
V
W
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
•
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
Absolute maximum ratings
Symbol
VCES
Non Punch Through (NPT) THUNDERBOLT IGBT ®
Tc = 25°C
Max ratings
600
110
90
315
±20
416
Tj = 150°C
315A @ 600V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF90TA60P – Rev 0 September, 2004
VBUS1
VCES = 600V
IC = 90A @ Tc = 80°C
APTGF90TA60P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Test Conditions
VGE = 0V, IC = 100µA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20 V, VCE = 0V
Min
600
VGS = 15V
VBus = 300V
IC = 90A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
Max
100
1000
2.0
2.2
VGE =15V
IC = 90A
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Typ
3
Min
Typ
4300
470
400
330
290
200
26
25
150
30
3.35
2.85
26
25
170
40
4.3
3.5
2.5
Unit
V
µA
V
5
±150
V
nA
Max
Unit
pF
nC
ns
mJ
ns
mJ
APT website – http://www.advancedpower.com
2-6
APTGF90TA60P – Rev 0 September, 2004
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
APTGF90TA60P
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
Test Conditions
Min
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 125°C
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
Diode Forward Voltage
IF = 60A
IF = 120A
IF = 60A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/µs
250
500
Tj = 125°C
Tj = 25°C
130
Tj = 125°C
Tj = 25°C
170
220
Tj = 125°C
920
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Unit
To heatsink
V
60
1.6
1.9
1.4
Thermal and package characteristics
RthJC
Max
600
Maximum Peak Repetitive Reverse Voltage
IRM
VF
Typ
M6
2500
-40
-40
-40
3
Typ
µA
A
1.8
V
ns
nC
Max
0.3
0.9
Unit
°C/W
V
150
125
100
5
250
°C
N.m
g
Package outline
APT website – http://www.advancedpower.com
3-6
APTGF90TA60P – Rev 0 September, 2004
5 places (3:1)
APTGF90TA60P
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
300
Tc=-55°C
250µs Pulse Test
< 0.5% Duty cycle
300
250
Ic, Collector Current (A)
Tc=25°C
200
150
Tc=125°C
100
50
250µs Pulse Test
< 0.5% Duty cycle
250
200
Tc=25°C
150
100
Tc=125°C
50
0
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
0
4
1
2
Gate Charge
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
200
150
100
TJ =25°C
50
T J=125°C
T J =-55°C
0
0
1
2
3
4
5
6
7
8
9
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=180A
5
4
3
Ic=90A
2
Ic=45A
1
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
IC = 90A
TJ = 25°C
16
14
VCE=120V
VCE=300V
12
10
VCE=480V
8
6
4
2
0
10
0
VCE, Collector to Emitter Voltage (V)
Ic, Collector Current (A)
4
18
250
VCE, Collector to Emitter Voltage (V)
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
300
50
100 150 200 250
Gate Charge (nC)
300
350
On state Voltage vs Junction Temperature
4
3.5
Ic=180A
3
2.5
Ic=90A
2
1.5
Ic=45A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
160
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
Tc=-55°C
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
140
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF90TA60P – Rev 0 September, 2004
Ic, Collector Current (A)
350
APTGF90TA60P
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
30
VGE = 15V
25
Tj = 25°C
VCE = 400V
RG = 5Ω
20
15
25
50
75
100
125
ICE, Collector to Emitter Current (A)
250
200
VGE=15V,
TJ=125°C
150
100
50
150
25
Current Rise Time vs Collector Current
VGE=15V,
T J=125°C
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
60
T J = 125°C
40
20
150
TJ = 25°C
25
Turn-On Energy Loss vs Collector Current
6
Eoff, Turn-off Energy Loss (mJ)
8
Eon, Turn-On Energy Loss (mJ)
125
0
0
VCE = 400V
RG = 5Ω
6
TJ=125°C,
VGE=15V
4
TJ =25°C,
VGE=15V
2
0
0
25
50
75
100
125
VCE = 400V
VGE = 15V
RG = 5Ω
5
4
Eoff, 180A
Eoff, 90A
8
Eon, 90A
Eoff, 45A
4
Eon, 45A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
TJ = 125°C
2
1
0
150
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Switching Energy Losses vs Junction Temp.
Switching Energy Losses (mJ)
12
Eon, 180A
150
TJ = 25°C
3
Switching Energy Losses vs Gate Resistance
VCE = 400V
VGE = 15V
TJ= 125°C
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
ICE, Collector to Emitter Current (A)
Switching Energy Losses (mJ)
100
VCE = 400V, VGE = 15V, RG = 5Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VCE = 400V
RG = 5Ω
20
16
75
Current Fall Time vs Collector Current
80
40
50
ICE, Collector to Emitter Current (A)
80
60
VGE=15V,
TJ =25°C
VCE = 400V
RG = 5Ω
10
V CE = 400V
VGE = 15V
RG = 5Ω
8
Eon, 180A
Eoff, 180A
6
Eon, 90A
4
Eoff, 90A
2
Eoff, 45A
Eon, 45A
0
0
25
50
75
100
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
125
5-6
APTGF90TA60P – Rev 0 September, 2004
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APTGF90TA60P
Capacitance vs Collector to Emitter Voltage
Minimum Switching Safe Operating Area
10000
350
IC , Collector Current (A)
C, Capacitance (pF)
Cies
1000
Coes
Cres
300
250
200
150
100
50
0
100
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.9
0.7
0.2
0.1
0.5
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
Rectangular Pulse Duration (Seconds)
200
0.1
1
Operating Frequency vs Collector Current
ZVS
160
120
ZCS
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
TC = 75°C
80
40
Hard
switching
0
20
40
60
80
100
IC , Collector Current (A)
120
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF90TA60P – Rev 0 September, 2004
0.15
Fmax, Operating Frequency (kHz)
Thermal Impedance (°C/W)
0.35
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