• GENERAL PURPOSE SILICON DIODES • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES EXCEPT SOLDER REFLOW CD483B CD485B CD486B CD645 AND CD5194 thru CD5196 24 MILS 12 MILS MAXIMUM RATINGS 24 MILS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C VRM VRWM IO IO TA=+150°C IFSM tp = 1/120 S TA=25°C V(pk) V(pk) mA mA A 80 180 250 270 80 180 250 70 180 225 225 70 180 225 200 200 200 400 200 200 200 50 50 50 150 50 50 50 2 2 2 5 2 2 2 VF(1) IR1 at VRWM TA+25°C IR2 at VRM TA+25°C IR3 at VRWM TA+150°C CAP @VR =4V V dc nA dc µA µA dc pF 25 25 25 50 25 25 25 100 100 100 50 100 100 100 5 5 5 25 5 5 5 – – – 2.0 – – – TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 0.8 0.8 0.8 0.8 0.8 0.8 0.8 - 1.0 1.0 1.0 1.0 1.0 1.0 1.0 12 MILS ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified DESIGN DATA METALLIZATION: Top: (Anode)....................Al Back: (Cathode)..............Au AL THICKNESS ............25,000 Å Min GOLD THICKNESS ........4,000 Å Min NOTE 1 AT 100mA (pulsed) except for CD645 which is at 400mA (pulsed) CHIP THICKNESS ..................10 Mils TOLERANCES: ALL Dimensions ± 2 mils 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] 173 CD483B, CD485B, CD486B, CD645, CD5194 thru CD5196 1000 0ºC 10 1 -65ºC 25º C 100 ºC 15 IF - Forward Current - (mA) 100 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) 1.1 1.2 1.3 FIGURE 2 Typical Forward Current vs Forward Voltage 1000 IR - Reverse Current - (µA) 100 10 1 150ºC 0.1 C 100º 25ºC .01 -65ºC NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) 174 FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures