PL IA NT CO M *R oH S Features Applications ■ Working voltage 3.3 V ■ FireWire, T1/E1, T3/E3 chip side protection ■ SMT - DFN package ■ Digital Visual Interface (DVI) ■ Low capacitance - 4 pF ■ Ethernet 10/100/1000 Base T ■ IEC 61000-4-2 (ESD) ■ High speed port protection ■ IEC 61000-4-4 (EFT) ■ Portable electronics ■ IEC 61000-4-5 (Surge) CDDFN10-3304N - TVS/Steering Diode Array General Information The CDDFN10-3304N device provides ESD, EFT and Surge protection for high speed data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a Working Peak Voltage of 3.3 V. Pin 5 Pin 1 The DFN-10 packaged device will mount directly onto the industry standard DFN-10 footprint. Bourns® Chip Diodes are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Pin 3 Pin 7 Pin 9 GND Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Parameter Peak Pulse Power (tp = 8/20 µs) (NOTE 1) Peak Pulse Current (tp = 8/20 µs) Symbol CDDFN10-3304N Unit PPK 450 W IPP 25 A Storage Temperature TSTG -55 to +150 ºC Operating Temperature TOPR -55 to +125 ºC Notes: 1. See Peak Pulse Power vs. Pulse Time. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Breakdown Voltage @ 1 mA Working Peak Voltage Symbol VBR Min. 3.9 Typ. VWM Max. Unit V 3.3 V 5 µA Leakage Current1 @ VWM ID Clamping Voltage2 @ IP = 5 A 8/20 µs VC 15 V Clamping Voltage2 @ IP = 15 A 8/20 µs VC 18 V Clamping Voltage2 @ IP = 20 A 8/20 µs VC 20 V Junction Capacitance2 @ 0 V 1 MHz CD 4.0 5.0 pF Junction Capacitance3 @ 0 V 1 MHz CIO 2.5 ESD Protection per IEC 61000-4-2 Contact Discharge Air Discharge EFT Protection per IEC 61000-4-4 @ 5/50 ns 1 8 15 40 Surge Protection per IEC 61000-4-5 @ 8/20 µs Note 1: Pin 5 to ground. Note 2: Pin 1,3,7 or 9 to ground. Note 3: Between Pin 1,3,7 and 9. pF 20 30 kV kV A 25 A Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDDFN10-3304N - TVS/Steering Diode Array Product Dimensions Recommended Footprint This is a molded DFN10 package with lead free Nickel-PaladiumGold (Ni/Pd/Au) on the lead frame. It has a flammability rating of UL 94V-0. 0.30 (.012) 0.50 (.020) 3.15 (.124) 2.45 - 2.55 (0.096 - 0.100) 1.26 (.050) 1.85 (.073) 2.50 (.100) 2.45 - 2.55 (0.096 - 0.100) PIN 1 INDICATOR 0.65 (.026) 2.05 (.081) Typical Part Marking 0.50 - 0.60 (0.020 - 0.024) CDDFN10-3304N ........................................................................334 How to Order 0.152 (0.006) CD DFN10 - 33 04 N 0.20 - 0.30 (0.008 - 0.012) 0.50 (0.020) Common Diode Chip Diode Package DFN10 = DFN-10 Package PIN 1 R 0.2 (.008) 1.15 - 1.25 (0.045 - 0.049) Working Peak Voltage 33 = 3.3 VRWM (Volts) Number of Lines 04 = 4 Data Lines Suffix N = Low Capacitance Pin Out 1.85 - 1.95 (0.073 - 0.077) 2.10 - 2.20 (0.083 - 0.087) DIMENSIONS: MM (INCHES) 0.35 - 0.45 (0.014 - 0.018) Pin Function 1 I/O 2 N.C. 3 I/O 4 N.C. 5 VCC 6 N.C. 7 I/O 8 N.C. 9 I/O 10 N.C. GND GROUND Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDDFN10-3304N - TVS/Steering Diode Array Rating & Characteristic Curves Pulse Waveform IPP – Peak Pulse Current (% of IPP) Peak Pulse Power vs. Pulse Time PPP – Peak Pulse (W) 10,000 450 W, 8/20 µs Waveform 1000 100 10 0.01 120 Test Waveform Parameters tt = 8 µs td = 20 µs tt 100 80 et 60 40 td = t|IPP/2 20 0 1 10 100 1,000 0 10,000 10 5 td – Pulse Duration (µs) Clamping Voltage vs Peak Pulse Current 20 25 30 Clamping Voltage vs Peak Pulse Current 22 24 22 20 Any I/O Pin to GND 18 Any I/O Pin to Another I/O Pin 20 18 16 Clamping Voltage (V) Clamping Voltage (V) 15 t – Time (µs) 14 12 10 8 6 Waveform Parameters: tr = 8 µs td = 20 µs 4 2 16 14 12 10 8 Waveform Parameters: tr = 8 µs td = 20 µs 6 4 2 0 0 0 5 10 15 20 25 0 5 10 Peak Pulse Current (A) 15 20 Peak Pulse Current (A) Power Derating Curve Typical Voltage vs. Capacitance 4.5 4.0 Any I/O Pin to GND 100 Peak Pulse Power 8/20 µs 3.0 80 2.5 % of Rated Power Input Capacitance (pF) 3.5 2.0 1.5 1.0 0.0 0.0 40 20 VDD = Floating, GND = 0 V, f = 1 MHz, T = 25 °C 0.5 60 Average Power 0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage (V) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 3.5 0 25 50 75 100 125 TL - Lead Temperature (°C) 150 25 CDDFN10-3304N - TVS/Steering Diode Array Packaging Information The product will be dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole Pin 1 Location 120 ° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... Leader ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Direction of Feed Item Symbol DFN-10 Carrier Width A 2.90 ± 0.10 (0.114 ± 0.004) Carrier Length B 2.90 ± 0.10 (0.114 ± 0.004) Carrier Depth C 0.90 ± 0.10 (0.035 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 178 (7.008) Reel Inner Diameter D1 50.0 MIN. (1.969) Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W 8.00 ± 0.20 (0.315 ± 0.008) Reel Width W1 Quantity per Reel MM (INCHES) -- Devices are packed in accordance with EIA standard RS-481-A. 14.4 MAX. (0.567) 3000 REV. 02/12 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.