C3D10065I VRRM = Silicon Carbide Schottky Diode IF (TC=125˚C) = 10 A Z-Rec™ Rectifier Qc Features • • • • • • = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • 650 V Electrically Isolated Package Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • HVAC Switch Mode Power Supplies Part Number Package Marking C3D10065I Isolated TO-220-2 C3D10065I Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 19 10 8.5 A TC=25˚C TC=125˚C TC=135˚C IFRM Repetitive Peak Forward Surge Current 28.6 17.7 A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse IFSM Non-Repetitive Peak Forward Surge Current 80 70 A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse Ptot Power Dissipation 60 26 W TC=25˚C TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Storage Temperature and Case Temperature -55 to +150 ˚C 1 8.8 Nm lbf-in IF Tstg, Tc TO-220 Mounting Torque 1 Value C3D10065I Rev. B M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8 2.4 V IF = 10 A TJ=25°C IF = 10 A TJ=175°C IR Reverse Current 12 24 60 220 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C QC Total Capacitive Charge 25 nC VR = 650 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 480 50 42 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Package Thermal Resistance from Junction to Case Typ. Unit 2.6 °C/W Typical Performance 12 20 18 TJ= -55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 16 14 10 8 (A) IRCurrent (μA) IF (A) 12 10 8 6 4 6 TJ= -55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 4 2 2 0 0 0.5 1 1.5 2 2.5 VF (V) Figure 1. Forward Characteristics 2 C3D10065I Rev. B 3 3.5 0 0 100 200 300 400 500 600 Voltage (V) VR (V) Figure 2. Reverse Characteristics 700 800 Typical Performance 60.0 45 40 50.0 35 20% 30% 50% 70% DC 40.0 25 PTot (W) IF (A) 30 Duty* Duty* Duty* Duty* 20 15 10 30.0 20.0 10.0 5 0 0.0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC ˚C TC ˚C Figure 3. Current Derating Figure 4. Power Derating 60 500 450 50 400 350 300 30 C (pF) Qrr (nC) 40 20 100 50 0 0 200 400 600 VR (V) 800 Figure 5. Recovery Charge vs. Reverse Voltage 3 200 150 10 0 250 C3D10065I Rev. B 1000 0.1 1 10 100 1000 VR (V) Figure 6. Capacitance vs. Reverse Voltage Typical Performance Thermal Resistance (˚C/W) 10 1 0.1 0.01 0.001 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 T (sec) Figure 7. Transient Thermal Impedance Diode Model Diode Model CSD10060 VfT = VT+If*RT T = VT + If*RT -3 VT =Vf0.98+(T J* -1.6*10 ) -3 RT = 0.04+(TJ* 0.522*10 ) VT= 0.92 + (Tj * -1.35*10-3) RT= 0.052 + (Tj * 0.29*10-3) Note: Tj = Diode Junction Temperature In Degrees Celsius VT 4 C3D10065I Rev. B RT 100 Package Dimensions Symbol A A1 b b1 c c1 D E E1 e1 F L L1 φ 5 Dimensions in Millimeters Min Max 4.420 4.720 2.520 2.820 0.710 0.910 1.170 1.370 0.360 0.460 1.170 1.370 9.950 10.250 8.930 9.290 12.550 12.850 4.980 5.180 2.590 2.890 13.080 13.480 2.470 2.870 3.790 3.890 C3D10065I Rev. B Dimensions in Inches Min Max 1.174 0.186 0.099 0.111 0.028 0.036 0.046 0.054 0.014 0.018 0.046 0.054 0.392 0.404 0.352 0.366 0.494 0.506 0.196 0.204 0.102 0.114 0.515 0.531 0.097 0.113 0.149 0.153 Recommended Solder Pad Layout Measurements shown in inches TO-220-2 Part Number Package Marking C3D10065I Isolated TO-220-2 C3D10065I Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D10065I Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power