CREE C3D10065I Silicon carbide schottky diode Datasheet

C3D10065I
VRRM =
Silicon Carbide Schottky Diode
IF (TC=125˚C) = 10 A
Z-Rec™ Rectifier
Qc
Features
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=
25 nC
Package
650-Volt Schottky Rectifier
Ceramic Package provides 2.5kV isolation
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
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650 V
Electrically Isolated Package
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
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HVAC
Switch Mode Power Supplies
Part Number
Package
Marking
C3D10065I
Isolated TO-220-2
C3D10065I
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
Continuous Forward Current
19
10
8.5
A
TC=25˚C
TC=125˚C
TC=135˚C
IFRM
Repetitive Peak Forward Surge Current
28.6
17.7
A
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
IFSM
Non-Repetitive Peak Forward Surge Current
80
70
A
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
Ptot
Power Dissipation
60
26
W
TC=25˚C
TC=110˚C
TJ
Operating Junction Range
-55 to
+175
˚C
Storage Temperature and Case Temperature
-55 to
+150
˚C
1
8.8
Nm
lbf-in
IF
Tstg, Tc
TO-220 Mounting Torque
1
Value
C3D10065I Rev. B
M3 Screw
6-32 Screw
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.0
1.8
2.4
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
IR
Reverse Current
12
24
60
220
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
QC
Total Capacitive Charge
25
nC
VR = 650 V, IF = 10 A
di/dt = 500 A/μs
TJ = 25°C
C
Total Capacitance
480
50
42
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Package Thermal Resistance from Junction to Case
Typ.
Unit
2.6
°C/W
Typical Performance
12
20
18
TJ= -55°C
TJ= 25°C
T = 75°C J
T =125°C
TJ =175°C
J
16
14
10
8
(A)
IRCurrent
(μA)
IF (A)
12
10
8
6
4
6
TJ= -55°C
TJ= 25°C
T = 75°C J
T =125°C
TJ =175°C
J
4
2
2
0
0
0.5
1
1.5
2
2.5
VF (V)
Figure 1. Forward Characteristics
2
C3D10065I Rev. B
3
3.5
0
0
100
200
300
400
500
600
Voltage (V)
VR (V)
Figure 2. Reverse Characteristics
700
800
Typical Performance
60.0
45
40
50.0
35
20%
30%
50%
70%
DC
40.0
25
PTot (W)
IF (A)
30
Duty*
Duty*
Duty*
Duty*
20
15
10
30.0
20.0
10.0
5
0
0.0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC ˚C
TC ˚C
Figure 3. Current Derating
Figure 4. Power Derating
60
500
450
50
400
350
300
30
C (pF)
Qrr (nC)
40
20
100
50
0
0
200
400
600
VR (V)
800
Figure 5. Recovery Charge vs. Reverse Voltage
3
200
150
10
0
250
C3D10065I Rev. B
1000
0.1
1
10
100
1000
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
Thermal Resistance (˚C/W)
10
1
0.1
0.01
0.001
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
T (sec)
Figure 7. Transient Thermal Impedance
Diode Model
Diode Model CSD10060
VfT = VT+If*RT
T = VT + If*RT
-3
VT =Vf0.98+(T
J* -1.6*10 )
-3
RT = 0.04+(TJ* 0.522*10
)
VT=
0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius
VT
4
C3D10065I Rev. B
RT
100
Package Dimensions
Symbol
A
A1
b
b1
c
c1
D
E
E1
e1
F
L
L1
φ
5
Dimensions in Millimeters
Min
Max
4.420
4.720
2.520
2.820
0.710
0.910
1.170
1.370
0.360
0.460
1.170
1.370
9.950
10.250
8.930
9.290
12.550
12.850
4.980
5.180
2.590
2.890
13.080
13.480
2.470
2.870
3.790
3.890
C3D10065I Rev. B
Dimensions in Inches
Min
Max
1.174
0.186
0.099
0.111
0.028
0.036
0.046
0.054
0.014
0.018
0.046
0.054
0.392
0.404
0.352
0.366
0.494
0.506
0.196
0.204
0.102
0.114
0.515
0.531
0.097
0.113
0.149
0.153
Recommended Solder Pad Layout
Measurements shown in inches
TO-220-2
Part Number
Package
Marking
C3D10065I
Isolated TO-220-2
C3D10065I
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D10065I Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
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