DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W FEATURES PINNING • Low current (max. 25 mA) PIN • Low voltage (max. 30 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • RF stages in FM front-ends in common base configuration. 3 handbook, halfpage DESCRIPTION 3 PNP medium frequency transistor in a SOT323 plastic package. 1 MARKING 2 TYPE NUMBER MARKING BF824W CODE(1) 1 F8∗ 2 Top view MAM048 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −30 V VCEO collector-emitter voltage open base − −30 V VEBO emitter-base voltage open collector − −4 V IC collector current (DC) − −25 mA ICM peak collector current − −25 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 625 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = −30 V − −50 nA IE = 0; VCB = −30 V; Tj = 150 °C − −10 µA nA IEBO emitter cut-off current IC = 0; VEB = −4 V − −100 hFE DC current gain IC = −1 mA; VCE = −10 V 25 − IC = −4 mA; VCE = −10 V 25 − VBE base-emitter voltage IC = −4 mA; VCE = −10 V − −900 mV Crb feedback capacitance IC = 0; VCE = −10 V; f = 1 MHz − 0.3 pF fT transition frequency VCE = −10 V; f = 100 MHz; note 1 IC = −1 mA 250 − MHz IC = −4 mA 400 − MHz IC = −8 mA 390 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 15 3 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Apr 15 REFERENCES IEC JEDEC EIAJ SC-70 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this 1999 Apr 15 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp6 Date of release: 1999 Apr 15 Document order number: 9397 750 05674