PHILIPS BF824W Pnp medium frequency transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BF824W
PNP medium frequency transistor
Product data sheet
Supersedes data of 1997 Jul 07
1999 Apr 15
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
BF824W
FEATURES
PINNING
• Low current (max. 25 mA)
PIN
• Low voltage (max. 30 V).
1
base
2
emitter
3
collector
APPLICATIONS
DESCRIPTION
• RF stages in FM front-ends in common base
configuration.
3
handbook, halfpage
DESCRIPTION
3
PNP medium frequency transistor in a SOT323 plastic
package.
1
MARKING
2
TYPE NUMBER
MARKING
BF824W
CODE(1)
1
F8∗
2
Top view
MAM048
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−30
V
VCEO
collector-emitter voltage
open base
−
−30
V
VEBO
emitter-base voltage
open collector
−
−4
V
IC
collector current (DC)
−
−25
mA
ICM
peak collector current
−
−25
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15
2
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
BF824W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −30 V
−
−50
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −4 V
−
−100
hFE
DC current gain
IC = −1 mA; VCE = −10 V
25
−
IC = −4 mA; VCE = −10 V
25
−
VBE
base-emitter voltage
IC = −4 mA; VCE = −10 V
−
−900
mV
Crb
feedback capacitance
IC = 0; VCE = −10 V; f = 1 MHz
−
0.3
pF
fT
transition frequency
VCE = −10 V; f = 100 MHz; note 1
IC = −1 mA
250
−
MHz
IC = −4 mA
400
−
MHz
IC = −8 mA
390
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 15
3
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
BF824W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 15
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
BF824W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
1999 Apr 15
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
115002/00/03/pp6
Date of release: 1999 Apr 15
Document order number: 9397 750 05674
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