Diode Semiconductor Korea SILICON BIDIRECTIONAL DIACS DB3.DB4 VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control. DO-35(GLASS) Dimensions in millimeters ABSOLUTE RATINGS Parameters Symbols DB3,DB4 UNITS Pc 150.0 mW ITRM 2.0 A TJ -40--- +125 o TSTG -40--- +125 o Power dissipation on printed TA=50oC circuit (L=10mm) Repetitive peak on-state current tp=20 S f=120Hz Operating junction temperature Storage temperature C C ELECTRICAL CHARACTERISTICS Parameters Breakover voltage (NOTE 1) Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) Test Conditions VBO I+VBO II-VBOI VI I± C=22nf(NOTE 2) See FIG.1 DB3 DB4 Min 28 35 Typ 32 40 Max 36 45 UNITS V C=22nf(NOTE 2) See FIG.1 Max ±3.0 V I=(IBO to IF=10mA) See FIG.1 Min 5.0 V V Output voltage (NOTE 1) Vo See FIG.2 Min 5.0 Breakover current (NOTE 1) IBO C=22nf(NOTE 2) Max 100.0 Rise time (NOTE 1) tr See FIG.3 Typ 1.5 S Leakage current (NOTE 1) IR V R=0.5 V BO See FIG.1 Max 10.0 A NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions. 2.Connected in parallel w ith the devices A www.diode.kr Diode Semiconductor Korea DB3.DB4 FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE +IF 10mA 10KΩ I BO IB -V +V 0.5VBO 500KΩ D.U.T 220V 60Hz Vo R=20Ω 0.1µ F Ｖ VBO -IF FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) P(mW) 160 140 90% 120 IP 100 80 60 40 10% 20 tr 0 FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) 1.08 Tamb( ℃ ) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) ITRM(A) VBO(TJ) VBO(TJ=25 ) 2 1 1.06 TJ( f=100Hz TJ initial=25℃ ) 1.04 0.1 tp(µ s) 1.02 1.00 25 50 75 100 125 0.01 10 100 1000 10000 www.diode.kr