DMG4712SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temperature High Conversion Efficiency Low On-Resistance Low Input Capacitance Fast Switching Speed Utilizes Diodes’ Monolithic SiMFET Technology to Increase Conversion Efficiency UIS Tested, RG Tested Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) SiMFET Schottky integrated MOSFET Top View S D S D S D G D Top View Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH Unit V V EAR Value 30 ±12 11.2 6.6 63 30 45 Symbol PD RθJA TJ, TSTG Value 1.55 81.3 -55 to +150 Unit W °C/W °C ID IDM IAR A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. L = 0.1mH, VDD = 0V, RG = Ω0, rated VDS = 30V, and VGS = 10V. DMG4712SSS Document number: DS32040 Rev. 5 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG4712SSS Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 100 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 1.0 - 2.2 V RDS (ON) - 10 11 14.0 15.4 mΩ |Yfs| VSD IS - 23 0.37 - 0.5 5 S V A VDS = VGS, ID = 250μA VGS = 10V, ID = 11.2A VGS = 4.5V, ID = 10A VDS = 5V, ID = 11.2A VGS = 0V, IS = 1A - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 2296 164 120 1.3 45.7 19.3 5.0 2.9 5.5 24.4 33.1 6.6 - pF pF pF Ω nC nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 11.2A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.2Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 30 30 VGS = 4.0V VGS = 3.5V 25 VDS = 5V 25 VGS = 2.5V ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise stated 20 VGS = 3.0V 15 10 VGS = 2.2V 5 20 VGS = 150°C 15 VGS = 125°C 10 VGS = 85°C VGS = 25°C 5 VGS = -55°C VGS = 2.0V 0 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4712SSS Document number: DS32040 Rev. 5 - 2 2 0 2 of 6 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 June 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 VGS = 10V 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4.5V ID = 10A 1.4 VGS = 10V ID = 20A 1.2 1.0 0.8 0.6 -50 0.04 VGS = 4.5V 0.03 TA = 150°C 0.02 TA = 125°C TA = 85°C TA = 25°C 0.01 0 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0 TA = -55°C 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.03 0.02 VGS = 4.5V ID = 10A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) VGS = 10V ID = 20A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature 20 3.0 18 2.5 16 2.0 1.5 ID = 10mA 1.0 0.5 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4712SSS 14 TA = 25°C 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG4712SSS Document number: DS32040 Rev. 5 - 2 0 0 3 of 6 www.diodes.com 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2010 © Diodes Incorporated DMG4712SSS 10,000 10,000 IDSS, LEAKAGE CURRENT (µA) C, CAPACITANCE (pF) Ciss 1,000 Coss Crss 100 10 TA = 125°C 1,000 TA = 85°C 100 10 TA = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 10 9 VGS, GATE-SOURCE VOLTAGE (V) 8 7 VDS = 15V ID = 11.2A 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 75°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 DMG4712SSS Document number: DS32040 Rev. 5 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 June 2010 © Diodes Incorporated DMG4712SSS Ordering Information (Note 8) Part Number DMG4712SSS-13 Packaging 2500 / Tape & Reel 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo G4712SS Part no. YY WW 1 4 Xth week: 51 ~ 53 Year: “08” = 2008 “09” = 2009 Package Outline Dimensions 0.254 NEW PRODUCT Notes: Case SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm D Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4712SSS Document number: DS32040 Rev. 5 - 2 5 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG4712SSS NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMG4712SSS Document number: DS32040 Rev. 5 - 2 6 of 6 www.diodes.com June 2010 © Diodes Incorporated