Diodes DMG4712SSS-13 N-channel enhancement mode mosfet with schottky diode Datasheet

DMG4712SSS
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
Mechanical Data
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High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temperature
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Utilizes Diodes’ Monolithic SiMFET Technology to Increase
Conversion Efficiency
UIS Tested, RG Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072 grams (approximate)
SiMFET
Schottky integrated MOSFET
Top View
S
D
S
D
S
D
G
D
Top View
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 85°C
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
Unit
V
V
EAR
Value
30
±12
11.2
6.6
63
30
45
Symbol
PD
RθJA
TJ, TSTG
Value
1.55
81.3
-55 to +150
Unit
W
°C/W
°C
ID
IDM
IAR
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. L = 0.1mH, VDD = 0V, RG = Ω0, rated VDS = 30V, and VGS = 10V.
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
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© Diodes Incorporated
DMG4712SSS
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
30
-
-
100
±100
V
μA
nA
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
1.0
-
2.2
V
RDS (ON)
-
10
11
14.0
15.4
mΩ
|Yfs|
VSD
IS
-
23
0.37
-
0.5
5
S
V
A
VDS = VGS, ID = 250μA
VGS = 10V, ID = 11.2A
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 11.2A
VGS = 0V, IS = 1A
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
2296
164
120
1.3
45.7
19.3
5.0
2.9
5.5
24.4
33.1
6.6
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 10V, ID = 11.2A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.2Ω
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
30
VGS = 4.0V
VGS = 3.5V
25
VDS = 5V
25
VGS = 2.5V
ID, DRAIN CURRENT (A)
VGS = 4.5V
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics @ TA = 25°C unless otherwise stated
20
VGS = 3.0V
15
10
VGS = 2.2V
5
20
VGS = 150°C
15
VGS = 125°C
10
VGS = 85°C
VGS = 25°C
5
VGS = -55°C
VGS = 2.0V
0
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
2
0
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0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
June 2010
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.04
0.03
VGS = 2.5V
0.02
VGS = 4.5V
0.01
VGS = 10V
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
VGS = 4.5V
ID = 10A
1.4
VGS = 10V
ID = 20A
1.2
1.0
0.8
0.6
-50
0.04
VGS = 4.5V
0.03
TA = 150°C
0.02
TA = 125°C
TA = 85°C
TA = 25°C
0.01
0
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0
TA = -55°C
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.03
0.02
VGS = 4.5V
ID = 10A
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
VGS = 10V
ID = 20A
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
20
3.0
18
2.5
16
2.0
1.5
ID = 10mA
1.0
0.5
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG4712SSS
14
TA = 25°C
12
10
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
0
0
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0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
June 2010
© Diodes Incorporated
DMG4712SSS
10,000
10,000
IDSS, LEAKAGE CURRENT (µA)
C, CAPACITANCE (pF)
Ciss
1,000
Coss
Crss
100
10
TA = 125°C
1,000
TA = 85°C
100
10
TA = 25°C
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
0
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
30
10
9
VGS, GATE-SOURCE VOLTAGE (V)
8
7
VDS = 15V
ID = 11.2A
6
5
4
3
2
1
0
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 75°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.0001
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
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10
100
1,000
June 2010
© Diodes Incorporated
DMG4712SSS
Ordering Information (Note 8)
Part Number
DMG4712SSS-13
Packaging
2500 / Tape & Reel
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8
5
Logo
G4712SS
Part no.
YY WW
1
4
Xth week: 51 ~ 53
Year: “08” = 2008
“09” = 2009
Package Outline Dimensions
0.254
NEW PRODUCT
Notes:
Case
SO-8
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
D
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMG4712SSS
Document number: DS32040 Rev. 5 - 2
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June 2010
© Diodes Incorporated
DMG4712SSS
NEW PRODUCT
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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DMG4712SSS
Document number: DS32040 Rev. 5 - 2
6 of 6
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June 2010
© Diodes Incorporated
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