CYSTEKEC BTB1199M3 Low vcesat pnp epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 1/8
Low Vcesat PNP Epitaxial Planar Transistor
BTB1199M3
Features
• Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA
• Pb-free package
Symbol
Outline
BTB1199M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Pd
Tj
Tstg
Note : *1 Single pulse, Pw=10ms
*2 When mounted on FR-4 PCB with area measuring 10×10×1 mm
*3 When mounted on ceramic with area measuring 40×40×1 mm
BTB1199M3
Limits
-40
-25
-5
-2
-4
-200
0.6
1
*2
2
*3
150
-55~+150
Unit
V
V
V
A
A
mA
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-25
-5
-0.5
120
40
-
Typ.
-0.24
120
19
Max.
-100
-100
-0.4
-0.8
390
-
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
Q
120~270
R
180~390
Ordering Information
Device
BTB1199M3
Package
SOT-89
(Pb-free)
Shipping
Marking
1000 pcs / Tape & Reel
BA
Recommended Storage Condition:
Temperature : ≤ 30 °C
Humidity : ≤ 60% RH
BTB1199M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.9
0.25
-IC, Collector Current(A)
-IC, Collector Current(A)
5mA
0.8
1mA
0.2
0.15
0.1
500uA
400uA
300uA
0.05
200uA
0.7
0.6
0.5
2.5mA
2mA
0.4
1.5mA
0.3
0.2
-IB=500uA
0.1
-IB=100uA
0
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
0
Emitter Grounded Output Characteristics
6
Emitter Grounded Output Characteristics
2.5
1.8
20mA
50mA
-IC, Collector Current(A)
1.6
-IC, Collector Current(A)
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
1.4
1.2
8mA
6mA
1
0.8
4mA
0.6
0.4
-IB=2mA
2
25mA
1.5
10mA
1
-IB=5mA
0.5
0.2
0
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
0
6
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
VCE=-1V
VCE=-2V
Current Gain---HFE
Current Gain---HFE
6
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
10
1
BTB1199M3
10
100
1000
-IC, Collector Current(mA)
10000
1
10
100
1000
-IC, Collector Current(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 4/8
Typical Characteristics(Cont.)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
[email protected]=10IB
Saturation Voltage---(mV)
Current Gain---HFE
VCE=-5V
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
10
1
10
100
1000
-IC, Collector Current(mA)
10000
1
10
Saturation Voltage vs Collector Current
1000
[email protected]=50IB
Saturation Voltage---(mV)
[email protected]=20IB
Saturation Voltage---(mV)
10000
Saturation Voltage vs Collector Current
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
10
1
10
100
1000
-IC, Collector Current(mA)
10000
1
10
100
1000
-IC, Collector Current(mA)
10000
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
[email protected]=-1V
On Voltage---(mV)
[email protected]=10IB
Saturation Voltage---(mV)
100
1000
-IC, Collector Current(mA)
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
BTB1199M3
10
100
1000
-IC, Collector CurrentmA)
1000
100
100
1
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
10000
1
10
100
1000
-IC, Collector Current(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 5/8
Typical Characteristics(Cont.)
Cutoff Frequency vs Collector Current
Capacitance vs Reverse-biased Voltage
1000
VCE=-5V
Cib
Capacitance---(pF)
Cutoff Frequency---fT(MHz)
1000
100
100
10
Cob
10
1
1
10
100
-IC, Collector Current(mA)
1000
0.1
1
10
-VR, Reverse-biased Voltage(V)
100
Power Derating Curves
Power Dissipation---PD(W)
2.5
2
See n ote 3 on page 1
See note 2 on page 1
1.5
1
0.5
0
0
BTB1199M3
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTB1199M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1199M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 8/8
SOT-89 Dimension
Marking:
A
2
1
3
Year code :
6→2006,
7→2007,…
HFE rank
Product
Code
H
C
month code: 1~9,
A,B,C
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
0.0551 0.0630
0.0138 0.0173
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1199M3
CYStek Product Specification
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