CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Features • Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package Symbol Outline BTB1199M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICM IBM Pd Tj Tstg Note : *1 Single pulse, Pw=10ms *2 When mounted on FR-4 PCB with area measuring 10×10×1 mm *3 When mounted on ceramic with area measuring 40×40×1 mm BTB1199M3 Limits -40 -25 -5 -2 -4 -200 0.6 1 *2 2 *3 150 -55~+150 Unit V V V A A mA W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -40 -25 -5 -0.5 120 40 - Typ. -0.24 120 19 Max. -100 -100 -0.4 -0.8 390 - Unit V V V nA nA V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1 Rank Range Q 120~270 R 180~390 Ordering Information Device BTB1199M3 Package SOT-89 (Pb-free) Shipping Marking 1000 pcs / Tape & Reel BA Recommended Storage Condition: Temperature : ≤ 30 °C Humidity : ≤ 60% RH BTB1199M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.9 0.25 -IC, Collector Current(A) -IC, Collector Current(A) 5mA 0.8 1mA 0.2 0.15 0.1 500uA 400uA 300uA 0.05 200uA 0.7 0.6 0.5 2.5mA 2mA 0.4 1.5mA 0.3 0.2 -IB=500uA 0.1 -IB=100uA 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 0 Emitter Grounded Output Characteristics 6 Emitter Grounded Output Characteristics 2.5 1.8 20mA 50mA -IC, Collector Current(A) 1.6 -IC, Collector Current(A) 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 1.4 1.2 8mA 6mA 1 0.8 4mA 0.6 0.4 -IB=2mA 2 25mA 1.5 10mA 1 -IB=5mA 0.5 0.2 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=-1V VCE=-2V Current Gain---HFE Current Gain---HFE 6 Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 BTB1199M3 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 4/8 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Current Gain---HFE VCE=-5V 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 Saturation Voltage vs Collector Current 1000 VCESAT@IC=50IB Saturation Voltage---(mV) VCESAT@IC=20IB Saturation Voltage---(mV) 10000 Saturation Voltage vs Collector Current 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBEON@VCE=-1V On Voltage---(mV) VBESAT@IC=10IB Saturation Voltage---(mV) 100 1000 -IC, Collector Current(mA) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C BTB1199M3 10 100 1000 -IC, Collector CurrentmA) 1000 100 100 1 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 5/8 Typical Characteristics(Cont.) Cutoff Frequency vs Collector Current Capacitance vs Reverse-biased Voltage 1000 VCE=-5V Cib Capacitance---(pF) Cutoff Frequency---fT(MHz) 1000 100 100 10 Cob 10 1 1 10 100 -IC, Collector Current(mA) 1000 0.1 1 10 -VR, Reverse-biased Voltage(V) 100 Power Derating Curves Power Dissipation---PD(W) 2.5 2 See n ote 3 on page 1 See note 2 on page 1 1.5 1 0.5 0 0 BTB1199M3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTB1199M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1199M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 8/8 SOT-89 Dimension Marking: A 2 1 3 Year code : 6→2006, 7→2007,… HFE rank Product Code H C month code: 1~9, A,B,C D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 0.0551 0.0630 0.0138 0.0173 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1199M3 CYStek Product Specification