Diode Semiconductor Korea BYT42A(Z)---BYT42M(Z) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.25 A FAST RECOVERY RECTIFIERS FEATURES Low cost DO-15 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 42A BYT 42B BYT 42D BYT 42G BYT 42J BYT 42K BYT 42M UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.25 A IFSM 40.0 A VF 1.4 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.25 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 5.0 IR 150 200 Maximum reverse recovery time (Note1) trr Typical junction capacitance CJ 18 RθJA 45 TJ - 55---- +150 TSTG - 55---- +150 Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range A 100.0 ns pF ／Ｗ NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr BYT42A(Z)---BYT42M(Z) Diode Semiconductor Korea FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. (+) 50VDC (APPROX) (-) ( - ) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. 0 -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O SET TIMEBASEFOR 50/100 ns /cm 30 20 TJ=25 Pulse Width=300µS 1 .4 1.2 1.0 0 .4 0 .2 0 .1 0 .0 6 0.0 4 0 .0 2 0 .0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 2.0 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 60 40 20 10 6 4 TJ=25 f=1MHz 1 .4 1.0 2 4 10 REVERSE VOLTAGE,VOLTS 20 40 100 PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF 100 .2 20 40 60 80 100 120 140 160 180 FIG.5--PEAK FORWARD SURGE CURRENT 200 .1 0 AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE 2 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.4 40 30 20 TJ=125 8.3ms Single Half Sine-Wave 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz www.diode.kr